Dual strain-state SiGe layers for microelectronics

• US 7,091,095 B2
• Filed: 02/08/2005
• Issued: 08/15/2006
• Est. Priority Date: 03/15/2003
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Chu, Jack Oon
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US11/053,707
• Publication Number:
  US 20050156268A1
• Time in Patent Office: 553 Days
• Field of Search: 438/46, 438/47, 438/285, 438/287, 438/479, 438/481, 438/761, 438/762, 438/763, 438/779, 438/933
• US Class Current: 438/287
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02538 Group 13/15 materials
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/7782 with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET

Abstract

A strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion is disclosed. The strained crystalline layer is epitaxially bonded, or grown, on top of a SiGe relaxed buffer layer, in a way that the tensilely strained SiGe has a Ge concentration below that of the SiGe relaxed buffer, and the compressively strained SiGe has a Ge concentration above that of the SiGe relaxed buffer. The strained crystalline layer and the relaxed buffer can reside on top a semi-insulator substrate or on top of an insulating divider layer. In some embodiments the tensile SiGe layer is pure Si, and the compressive SiGe layer is pure Ge. The tensilely strained SiGe layer is suited for hosting electron conduction type devices and the compressively strained SiGe is suited for hosting hole conduction type devices. The strained crystalline layer is capable to seed an epitaxial insulator, or a compound semiconductor layer.

Claims

1. A method for creating a strained crystalline layer having a tensilely strained SiGe layer portion and a compressively strained SiGe layer portion, comprising the step of:

bonding epitaxially said strained crystalline layer over a SiGe relaxed buffer layer, wherein said tensilely strained SiGe and said compressively strained SiGe are epitaxially bonded over said SiGe relaxed buffer layer in coplanar spatial relation, wherein the Ge concentration of said tensilely strained SiGe is chosen to be below the Ge concentration of said SiGe relaxed buffer, and the Ge concentration of said compressively strained SiGe is chosen to be above the Ge concentration of said SiGe relaxed buffer.

2. The method of claim 1, wherein in the step of epitaxially bonding said tensilely strained SiGe layer, an up to about 15% Ge concentration is chosen for said tensilely strained SiGe layer.

3. The method of claim 1, wherein in the step of epitaxially bonding said compressively strained SiGe layer an up to about 70% Si concentration is chosen for said compressively strained SiGe layer.

4. The method of claim 1, wherein in the step of epitaxially bonding said tensilely strained SiGe layer, an up to about 1% C concentration is chosen for said tensilely strained SiGe layer.

5. The method of claim 1, wherein in the step of epitaxially bonding said compressively strained SiGe layer an up to about 1% C concentration is chosen for said compressively strained SiGe layer.

6. The method of claim 1, wherein the step of epitaxially bonding said compressively strained SiGe layer further comprises a process of grading the Ge concentration in said compressively strained SiGe layer.

7. The method of claim 1, wherein said strained crystalline layer is chosen to be between about 0.1 nm and 100 nm thick.

8. The method of claim 1, wherein the step of epitaxially bonding further comprises the steps of:

growing epitaxially said tensilely strained SiGe layer over said SiGe relaxed buffer layer;

removing said tensilely strained SiGe over that portion of said SiGe relaxed buffer layer which is to be occupied by said compressively strained SiGe layer, wherein forming at least one opening in said tensilely strained SiGe layer; and

growing epitaxially said compressively strained SiGe layer in said at least one opening.

9. The method of claim 8, further comprising the step of:

depositing epitaxially a SiGe first seed layer with up to 25% Ge concentration, wherein this step is executed before said step of growing epitaxially said compressively strained SiGe.

10. The method of claim 9, wherein said SiGe first seed layer is chosen to have up to about 1% C concentration.

11. The method of claim 9, wherein said SiGe first seed layer is chosen to be between about 0.3 nm and 3 nm thick.

12. The method of claim 8, further comprising the step of:

constructing an isolation dielectric strip, wherein said strip covers a sidewall surface of said tensilely strained SiGe, wherein said sidewall surface has become exposed during said step of removing said tensilely strained SiGe, whereby said isolation dielectric strip will become an isolating trench separating said tensilely strained SiGe portion and said compressively strained SiGe portion.

13. The method of claim 1, wherein the step of epitaxially bonding further comprises the steps of:

growing epitaxially said compressively strained SiGe layer over said SiGe relaxed buffer layer;

removing said compressively strained SiGe over that portion of said SiGe relaxed buffer layer which is to be occupied by said tensilely strained SiGe layer, wherein forming at least one opening in said compressively strained SiGe layer; and

growing epitaxially said tensilely strained SiGe layer in said at least one opening.

14. The method of claim 13, further comprising the step of:

depositing epitaxially a SiGe second seed layer with up to 25% Ge concentration, wherein this step is executed before said step of growing epitaxially said compressively strained SiGe.

15. The method of claim 14, wherein said SiGe second seed layer is chosen to have up to about 1% C concentration.

16. The method of claim 14, wherein said SiGe second seed layer is chosen to be between about 0.3 nm and 3 nm thick.

17. The method of claim 13, further comprising the step of:

constructing an isolation dielectric strip, wherein said strip covers a sidewall surface of said compressively strained SiGe, wherein said sidewall surface has become exposed during said step of removing said compressively strained SiGe, whereby said isolation dielectric strip will become an isolating trench separating said compressively strained SiGe portion and said tensilely strained SiGe portion.

18. The method of claim 1, wherein said method further comprises the fabrication of said SiGe relaxed buffer layer, comprising the steps of:

depositing epitaxially a support structure over a Si substrate; and

growing epitaxially a first part of said SiGe relaxed buffer over said support structure.

19. The method of claim 18, wherein the step of fabricating said SiGe relaxed buffer layer further comprises the step of smoothing said first part of said SiGe relaxed buffer to below about 0.5 nm RMS of surface roughness.

20. The method of claim 19, wherein the step of fabricating said SiGe relaxed buffer layer further comprises the step of using said smooth first part of said SiGe relaxed buffer as said SiGe relaxed buffer layer.

21. The method of claim 19, wherein the step of fabricating said SiGe relaxed buffer layer further comprises the steps of:

depositing epitaxially a thin Si layer over said smooth first part of said SiGe relaxed buffer; and

depositing epitaxially a second part of said SiGe relaxed buffer over said thin Si layer.

22. The method of claim 21, wherein said thin Si layer is chosen to be between about 1 nm and 15 nm thick.

23. The method of claim 21, wherein said second part of said SiGe relaxed buffer is chosen to be between about 0.25 nm and 100 nm thick.

24. The method of claim 21, wherein the step of fabricating said SiGe relaxed buffer layer further comprises the steps of:

bonding said second part of said SiGe relaxed buffer onto a new Si substrate;

performing a layer transfer of said second part of said SiGe relaxed buffer and said thin Si layer;

etching away remainder of said first part of said SiGe relaxed buffer with a first selective etch, employing said thin Si layer as etch stop; and

etching away said thin Si layer with a second selective etch, employing said second part of said SiGe relaxed buffer as etch stop, whereby exposing said second part of said SiGe relaxed buffer and using said second part of said SiGe relaxed buffer as said SiGe relaxed buffer layer.

25. The method of claim 21, wherein the step of fabricating said SiGe relaxed buffer layer further comprises the steps of:

securing said second part of said SiGe relaxed buffer to a new Si substrate, with an insulating divider layer interposed therebetween said second part of said SiGe relaxed buffer and said new substrate;

performing a layer transfer of said second part of said SiGe relaxed buffer and said thin Si layer;

etching away remainder of said first part of said SiGe relaxed buffer with a first selective etch, employing said thin Si layer as etch stop; and

etching away said thin Si layer with a second selective etch, employing said second part of said SiGe relaxed buffer as etch stop, whereby exposing said second part of said SiGe relaxed buffer and using said second part of said SiGe relaxed buffer as said SiGe relaxed buffer layer.

26. The method of claim 25, wherein said securing step further comprises the step of enclosing at least one conducting plane in said insulating divider layer.

27. The method of claim 26, further comprising the step of patterning said at least one conducting plane.

28. The method of claim 26, further comprising the step of connecting said at least one conducting plane out of said insulating divider layer by means of at least one via.

29. The method of claim 25, wherein said securing step further comprises the steps of:

growing epitaxially a between about 0.3 nm and 1.5 nm thick second crystalline SiO₂ layer onto said second part of said SiGe relaxed buffer; and

depositing a first insulator layer over said second crystalline SiO₂ layer, wherein said interposed insulating divider layer comprises said second crystalline SiO₂ layer and said first insulator layer.

30. A method for creating a strained crystalline layer divided into two complementary regions, a first region consisting essentially of a tensilely strained SiGe layer, and a second region consisting essentially of a compressively strained SiGe layer, comprising the steps of:

fabricating said tensilely strained SiGe layer;

fabricating said compressively strained SiGe layer, wherein said compressively strained SiGe layer having essentially same thickness as said tensilely strained SiGe layer;

removing said tensilely strained SiGe in places corresponding to said second region;

removing said compressively strained SiGe layer in places corresponding to said first region; and

bonding said tensilely strained SiGe layer and said compressively strained SiGe layer while interlocking said complementary first and second regions, whereby said tensilely strained SiGe layer and said compressively strained SiGe layer forming said strained crystalline layer divided into two complementary regions, and

removing an excess of material covering said strained crystalline layer, whereby said excess of material resulted due to said bonding step.

31. The method of claim 30, further comprising the step of:

constructing at least one isolation dielectric strip before said bonding step onto a sidewall surface of said strained crystalline layer, wherein said sidewall surface has become exposed after said removing steps, whereby said isolation dielectric strip facilitates alignment in said bonding step, and will become an isolating trench separating said compressively strained SiGe layer from said tensilely strained SiGe layer.

32. A method for fabricating a processor, comprising the step of:

using at least one chip, wherein said at least one chip is selected to comprise a strained crystalline layer having a tensilely strained SiGe layer portion and a compressively strained SiGe layer portion, wherein creating said crystalline layer comprise the step of bonding epitaxially said strained crystalline layer over a SiGe relaxed buffer layer, wherein said tensilely strained SiGe and said compressively strained SiGe are epitaxially bonded over said SiGe relaxed buffer layer in coplanar spatial relation, wherein the Ge concentration of said tensilely strained SiGe is chosen to be below the Ge concentration of said SiGe relaxed buffer, and the Ge concentration of said compressively strained SiGe is chosen to be above the Ge concentration of said SiGe relaxed buffer, and wherein a plurality of devices are hosted in said strained crystalline layer, and wherein said plurality of devices are chosen to comprise electron conduction type devices in said tensilely strained SiGe portion, and wherein said plurality of devices are chosen to comprise hole conduction type devices in said compressively strained SiGe portion.

33. The method for fabricating the processor of claim 32, further comprise the step of incorporating into said at least one chip at least one optical device.