Electrostatic capacitance sensing device and method of driving the same
First Claim
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1. An electrostatic capacitance sensing device, the device comprising:
- M number of row lines;
N number of column lines; and
electrostatic capacitance sensing elements formed at intersections between the row lines and the column lines, and arranged in a matrix of M rows and N columns,each of the electrostatic capacitance sensing elements including a signal sensing element, a signal amplifying element, a row selection element, and a column selection element;
the signal sensing element including a capacitance sensing electrode and a capacitance sensing dielectric film;
the signal amplifying element being a semiconductor device to amplify a signal that includes a gate electrode, a gate insulation film, and a semiconductor film;
the row selection element being a semiconductor device for row selection that includes a gate electrode, a gate insulation film, and a semiconductor film;
the column selection element being a semiconductor device to select a column that includes a gate electrode, a gate insulation film, and a semiconductor film, andthe semiconductor device to amplify a signal, the semiconductor device for row selection, and the semiconductor device to select the column being coupled to each other in series, wherein;
the gate electrode of the MIS type thin-film semiconductor device to amplify a signal being coupled to the capacitance sensing electrode;
the gate electrode of the MIS type thin-film semiconductor device for row selection being coupled to one of the row lines; and
the gate electrode of the MIS type thin-film semiconductor device to select a column being coupled to one of the column lines.
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Abstract
An electrostatic capacitance sensing device of exemplary embodiments of the present invention include M number of row lines, N number of column lines that are arranged in a matrix of M rows and N columns, N number of path gates for output signal, and electrostatic capacitance sensing elements provided at the intersections between the row and column lines. The electrostatic capacitance sensing element includes a signal sensing element, a signal amplifying element, a column selection element, and a row selection element. The signal sensing element includes a capacitance sensing electrode and a capacitance sensing dielectric film. The path gate for output signal, the signal amplifying element, the column selection element, and the row selection element are made up of thin-film semiconductor devices.
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Citations
16 Claims
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1. An electrostatic capacitance sensing device, the device comprising:
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M number of row lines; N number of column lines; and electrostatic capacitance sensing elements formed at intersections between the row lines and the column lines, and arranged in a matrix of M rows and N columns, each of the electrostatic capacitance sensing elements including a signal sensing element, a signal amplifying element, a row selection element, and a column selection element; the signal sensing element including a capacitance sensing electrode and a capacitance sensing dielectric film; the signal amplifying element being a semiconductor device to amplify a signal that includes a gate electrode, a gate insulation film, and a semiconductor film; the row selection element being a semiconductor device for row selection that includes a gate electrode, a gate insulation film, and a semiconductor film; the column selection element being a semiconductor device to select a column that includes a gate electrode, a gate insulation film, and a semiconductor film, and the semiconductor device to amplify a signal, the semiconductor device for row selection, and the semiconductor device to select the column being coupled to each other in series, wherein; the gate electrode of the MIS type thin-film semiconductor device to amplify a signal being coupled to the capacitance sensing electrode; the gate electrode of the MIS type thin-film semiconductor device for row selection being coupled to one of the row lines; and the gate electrode of the MIS type thin-film semiconductor device to select a column being coupled to one of the column lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An electrostatic capacitance sensing device, the device comprising:
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M number of row lines; N number of column lines; a path gate for an output signal; and electrostatic capacitance sensing elements formed at intersections between the row lines and the column lines, and arranged in a matrix of M rows and N columns, each of the electrostatic capacitance sensing elements including a signal sensing element, a signal amplifying element, a row selection element, and a column selection element; the path gate for output signal being a semiconductor device for output signal pass gate that includes a gate electrode, a gate insulation film, and a semiconductor film; the signal sensing element including a capacitance sensing electrode and a capacitance sensing dielectric film; the signal amplifying element being a semiconductor device to amplify a signal that includes a gate electrode, a gate insulation film, and a semiconductor film; the row selection element being a semiconductor device for row selection that includes a gate electrode, a gate insulation film, and a semiconductor film; the column selection element being a semiconductor device to select a column that includes a gate electrode, a gate insulation film, and a semiconductor film, the semiconductor device to amplify a signal, the semiconductor device for row selection, and the semiconductor device to select a column being coupled to each other in series, the gate electrode of the MIS type thin-film semiconductor device to amplify a signal being coupled to the capacitance sensing electrode, the gate electrode of the MIS type thin-film semiconductor device for row selection being coupled to one of the row lines, and the gate electrode of the MIS type thin-film semiconductor device to select a column being coupled to one of the column lines. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification
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Current Assignee138 East LCD Advancements Limited (Vector Capital Corporation)
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Original AssigneeSeiko Epson Corporation (Seiko Group)
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InventorsMiyasaka, Mitsutoshi, Sano, Junichi
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Primary Examiner(s)Benson, Walter
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Application NumberUS10/932,037Publication NumberTime in Patent Office712 DaysField of Search324/661, 324/662, 382/124US Class Current324/661CPC Class CodesA61B 5/1077 Measuring of profilesA61B 5/1172 using fingerprintingG01D 5/2405 by varying dielectricG06V 40/1306 non-optical, e.g. ultrasoni...
