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Electrostatic capacitance sensing device and method of driving the same

  • US 7,091,726 B2
  • Filed: 09/02/2004
  • Issued: 08/15/2006
  • Est. Priority Date: 09/05/2003
  • Status: Active Grant
First Claim
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1. An electrostatic capacitance sensing device, the device comprising:

  • M number of row lines;

    N number of column lines; and

    electrostatic capacitance sensing elements formed at intersections between the row lines and the column lines, and arranged in a matrix of M rows and N columns,each of the electrostatic capacitance sensing elements including a signal sensing element, a signal amplifying element, a row selection element, and a column selection element;

    the signal sensing element including a capacitance sensing electrode and a capacitance sensing dielectric film;

    the signal amplifying element being a semiconductor device to amplify a signal that includes a gate electrode, a gate insulation film, and a semiconductor film;

    the row selection element being a semiconductor device for row selection that includes a gate electrode, a gate insulation film, and a semiconductor film;

    the column selection element being a semiconductor device to select a column that includes a gate electrode, a gate insulation film, and a semiconductor film, andthe semiconductor device to amplify a signal, the semiconductor device for row selection, and the semiconductor device to select the column being coupled to each other in series, wherein;

    the gate electrode of the MIS type thin-film semiconductor device to amplify a signal being coupled to the capacitance sensing electrode;

    the gate electrode of the MIS type thin-film semiconductor device for row selection being coupled to one of the row lines; and

    the gate electrode of the MIS type thin-film semiconductor device to select a column being coupled to one of the column lines.

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