Rectifying antenna and method of manufacture

• US 7,091,918 B1
• Filed: 10/25/2004
• Issued: 08/15/2006
• Est. Priority Date: 10/24/2003
• Status: Active Grant

• Current Assignee: University of Florida (State University System of Florida), University of South Florida (State University System of Florida)
• Original Assignee: University of South Florida (State University System of Florida)
• Inventors: Weller, Thomas, Goswami, D. Yogi, Bhansali, Shekhar, Buckle, Kenneth, Stefanakos, Elias
• Primary Examiner(s): Dinh, Trinh Vo
• Application Number:
  US10/904,121
• Time in Patent Office: 659 Days
• Field of Search: 343/767, 343/850, 343/860
• US Class Current: 343/767
• CPC Class Codes: H01L 31/035209 comprising a quantum structures
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type
• CPC Class Codes: H01Q 1/248 provided with an AC/DC converting device, e.g. rectennas
• CPC Class Codes: H01Q 13/10 Resonant slot antennas
• CPC Class Codes: H01Q 21/0087 Apparatus or processes specially adapted for manufacturing antenna arrays manufacturing waveguides H01P11/00

Abstract

In accordance with the present invention, an aperture rectenna is provided where the substrate is transparent and of sufficient mechanical strength to support the fabricated structure above it. An aperture antenna is deposited on the transparent substrate and a metal-insulator-metal (MIM) diode is constructed on top of the aperture antenna. There is an insulating layer between the aperture antenna metal and the metal ground plane optimized to maximize the collection of incident radiation. The top of the structure is capped with a metal ground plane layer, which also serves as the DC connection points for each rectenna element.

Claims

1. A rectifying antenna, comprising:

a transparent substrate layer;

an aperture antenna fabricated on a surface of the transparent substrate;

a rectifier having an anode and a cathode, the anode and the cathode electrically connected to the aperture antenna and separated from each other, the rectifier fabricated on top of the aperture antenna;

a dielectric layer deposited to cover the aperture antenna and the rectifier; and

a metal ground plane deposited over the dielectric layer, the metal ground plane being in electrical connectivity with the anode and the cathode of the rectifier.

2. The rectifying antenna of claim 1, wherein the transparent substrate layer is glass.

3. The rectifying antenna of claim 1, wherein the aperture antenna is fabricated of a metal.

4. The rectifying antenna of claim 3, wherein the metal is gold.

5. The rectifying antenna of claim 1, wherein the aperture antenna is fabricated by depositing metal onto the surface of the transparent substrate and etching away the metal to form a slot and a dc break in the metal layer to reveal the transparent substrate, the slot and the dc break being contiguous.

6. The rectifying antenna of claim 1, wherein the slot etched in the metal layer is approximately 3λ

/4 in major length and approximately λ

/10 in width, where λ

is the center wavelength of the radiation to be collected.

7. The rectifying antenna of claim 5, wherein the dc break etched in the metal layer is approximately λ

/4 in major length.

8. The rectifying antenna of claim 5, wherein the slot further comprises a metal rectifier pad located approximately in the center of the slot and having a width of less than λ

/10.

9. The rectifying antenna of claim 1, wherein the dielectric layer is fabricated to maximize the collection of radiation incident on the aperture antenna.

10. The rectifying antenna of claim 1, wherein the dielectric layer is approximately λ

/4 in thickness.

11. The rectifying antenna of claim 1, wherein the dielectric layer is selected from the group consisting of ceramic, mica, glass, plastic and metal oxides.

12. The rectifying antenna of claim 1, wherein the rectifier is a metal-insulator-metal rectifier.

13. The rectifying antenna of claim 12, wherein the metal-insulator-metal rectifier is fabricated using a first metal having a first potential and a second metal having a second potential.

14. The rectifying antenna of claim 13, wherein the first metal is platinum.

15. The rectifying antenna of claim 13, wherein the second metal is palladium.

16. The rectifying antenna of claim 12, wherein the insulator of the metal-insulator-metal rectifier is selected from the group consisting of silicon dioxide, silicon nitride and aluminum oxide.

17. The rectifying antenna of claim 1, wherein the rectifier is a bolometer.

18. The rectifying antenna of claim 1, further comprising a matching transmission line fabricated between the antenna and the rectifier to provide impedance matching.

19. The rectifying antenna of claim 1, further comprising a cooling mechanism.

20. The rectifying antenna of claim 19, wherein the cooling mechanism is a liquid cooling channel positioned coincident with the ground plane.

21. The rectifying antenna of claim 19, wherein the cooling mechanism is a silicon passive heat exchanger module.

22. The rectifying antenna of claim 1, further comprising at least one notch filter positioned between the antenna and the rectifier to reduce harmonics.

24. The method of claim 1, wherein the step of fabricating an aperture antenna on a surface of the transparent substrate further comprises:

depositing a first metal on the surface of the transparent substrate layer; and

etching away the deposited first metal to form a slot for the aperture antenna and a dc break.

25. The method of claim 24, wherein the step of etching the deposited first metal further comprises:

etching away the deposited first metal to form a slot approximately 3λ

/4 in major length and approximately λ

/10 in width, where λ

is the center wavelength of the radiation to be collected; and

etching away the deposited first metal to form a dc break approximately λ

/4 in major length.

23. A method of fabricating a rectifying antenna, the method comprising the steps of:

providing a transparent substrate layer;

fabricating an aperture antenna on a surface of the transparent substrate;

fabricating a rectifier on the surface of the aperture antenna, the rectifier having an anode and a cathode, the anode and the cathode electrically connected to the aperture antenna and separated from each other;

depositing a dielectric layer to cover the aperture antenna and the rectifier; and

depositing a metal ground plane over the dielectric layer, the metal ground plane being in electrical connectivity with the anode and the cathode of the rectifier.

26. The method of claim 23, wherein the step of fabricating a rectifier on the surface of the aperture antenna, the rectifier having an anode and a cathode, the anode and the cathode electrically connected to the aperture antenna and separated from each other, further comprises, fabricating a metal-insulator-metal rectifier.

27. The method of claim 26, wherein the step of fabricating a metal-insulator-metal rectifier further comprises:

forming a conducting indentation in the center of the antenna slot, the conducting indentation fabricated of a first metal thereby forming the anode of the rectifier;

depositing a dielectric layer on top of the conducting indentation;

fabricating a second metal layer on top of the dielectric layer to form the cathode of the rectifier, thus forming a metal-insulator-metal rectifier across the aperture antenna.

28. The method of claim 27, wherein the step of depositing a dielectric layer on top of the conducting indentation further comprises, depositing a dielectric layer between approximately 1.5 nm and 2 nm in thickness.

29. The method of claim 27, wherein the step of fabricating a second metal layer further comprises fabricating a second metal layer approximately 50 nm in thickness.

30. The method of claim 23, wherein the step of depositing a dielectric layer to cover the aperture antenna and the rectifier further comprises, depositing a dielectric layer approximately λ

/4 in thickness.

31. The method of claim 23, wherein the step of depositing a dielectric layer to cover the aperture antenna and the rectifier further comprise planarizing the dielectric layer to form a dielectric layer of substantially uniform thickness of λ

/4.

32. The method of claim 23, further comprising connecting a plurality of rectifying antennas to form an array of rectifying antennas.

33. The method of claim 23, further comprising fabricating a matching transmission line between the antenna and the rectifier to improve impedance matching.

34. The method of claim 23, further comprising fabricating cooling channels coincident with the first metal layer.

35. The method of claim 23, further comprising fabricating a silicon passive heat exchanger module coincident with the substrate layer.

36. The method of claim 23, further comprising fabricating at least one notch filter between the antenna and the rectifier to reduce harmonics.