Developing method, substrate treating method, and substrate treating apparatus

• US 7,094,522 B2
• Filed: 10/21/2004
• Issued: 08/22/2006
• Est. Priority Date: 08/30/2002
• Status: Expired due to Term

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yoneda, Ikuo, Itoh, Masamitsu, Sakurai, Hideaki
• Primary Examiner(s): Le, Hoa Van
• Application Number:
  US10/969,018
• Publication Number:
  US 20050081996A1
• Time in Patent Office: 670 Days
• Field of Search: 430/327, 430/311, 430/319
• US Class Current: 430/327
• CPC Class Codes: G03F 7/30 Imagewise removal using liquid means
• CPC Class Codes: Y10S 438/906 Cleaning of wafer as interim step

Abstract

A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Claims

1. A substrate treating method for discharging a first solution continuously to a substrate from a solution discharge port of solution discharge/suction unit, sucking the solution on the surface to be treated continuously from solution suction ports disposed in the solution discharge/suction unit so as to enclose the solution discharge port continuously, moving the solution discharge/suction unit and the substrate relatively, and treating with the solution by adjusting the suction pressure such that the solution does not flow out to the outside of the solution suction port, the method comprising:

acquiring in advance the relation between the covering rate of a pattern which is not removed by the first solution in the treating region where the first solution flow exists on the substrate, the relative speed of the solution discharge/suction unit and the substrate, and the finishing dimension of the pattern after the solution treatment;

determining the relative speed of the solution discharge/suction unit and the substrate depending on the pattern covering rate on the basis of the relation; and

treating with the solution while relatively moving the solution discharge/suction unit and the substrate depending on the determined relative speed and the pattern covering rate in the treating region.

2. The substrate treating method according to claim 1, wherein the solution treatment is executed while supplying a second solution different from the first solution of the substrate.

3. The substrate treating method according to claim 1, wherein the solution treatment is executed in a state in which vibration is applied to the first solution on the substrate.

4. The substrate treating method according to claim 1, wherein whole or part of the substrate is treated with the solution by moving the solution discharge/suction unit reciprocally in one direction relatively to the substrate, and by a desired amount in a direction at right angle to the reciprocal motion direction at the turning point of the reciprocal motion.