In-situ monitoring of chemical vapor deposition process by mass spectrometry
First Claim
1. A method of chemical vapor deposition comprising the steps of:
- providing a semiconductor substrate in a chemical vapor reaction chamber;
positioning a capillary tube proximate the semiconductor substrate for removal of a gas sample;
providing measuring and monitoring means for measuring and monitoring one or more properties of one or more gaseous-by-products formed in the chemical vapor reaction chamber;
providing a pump outside the chamber in communication with the capillary tube and measuring and monitoring means and positioned between the capillary tube and the measuring and monitoring means;
introducing reactant materials into the chamber;
effectuating a reaction between the reactant materials to produce a desired end product and at least one gaseous by-product;
forming the desired end product on a surface of the substrate;
removing with the pump a sample of the gases from the chamber including at least one gaseous by-product through the capillary tube and passing the pumped sample to the measuring and monitoring means; and
measuring and monitoring one or more properties of one or more of the gaseous by-products during the reaction and controlling the deposition method based on the measured and monitored gaseous by-product properties.
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Accused Products
Abstract
A method and apparatus are provided for controlling a CVD process used to deposit films on semiconductor substrates wherein the by-products of the reaction are measured and monitored during the reaction preferably using mass spectrometry and the results used to calculate the concentrations of the by-products and to control the CVD reaction process based on the by-product concentrations. An exemplary CVD process is the deposition of tungsten metal on a semiconductor wafer. A preferred method and apparatus uses a capillary gas sampling device for removing the by-product gases of the reaction as a feed for the mass spectrometer. The capillary gas sampling device is preferably connected to a differential pump.
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Citations
9 Claims
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1. A method of chemical vapor deposition comprising the steps of:
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providing a semiconductor substrate in a chemical vapor reaction chamber; positioning a capillary tube proximate the semiconductor substrate for removal of a gas sample; providing measuring and monitoring means for measuring and monitoring one or more properties of one or more gaseous-by-products formed in the chemical vapor reaction chamber; providing a pump outside the chamber in communication with the capillary tube and measuring and monitoring means and positioned between the capillary tube and the measuring and monitoring means; introducing reactant materials into the chamber; effectuating a reaction between the reactant materials to produce a desired end product and at least one gaseous by-product; forming the desired end product on a surface of the substrate; removing with the pump a sample of the gases from the chamber including at least one gaseous by-product through the capillary tube and passing the pumped sample to the measuring and monitoring means; and measuring and monitoring one or more properties of one or more of the gaseous by-products during the reaction and controlling the deposition method based on the measured and monitored gaseous by-product properties. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification