Method for production of contacts on a wafer
First Claim
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1. A method of forming a semiconductor device, the method comprising:
- providing a surface that includes a plurality of contacts laid out in a matrix of rows and columns;
forming a first plurality of strips over the surface, each strip in the first plurality contacting ones of the contacts disposed along a diagonal of the matrix;
forming a second plurality of strips over the surface and over the first plurality of strips, each strip in the second plurality disposed along a row of the matrix; and
removing portions of the first plurality of strips not underlying the second plurality of strips.
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Abstract
The invention relates to a method for production of contacts on a wafer, preferably with the aid of a lithographic process. The preferred embodiment provides a method which overcomes the disadvantages of the complex point/hole lithography process, and which avoids any increase in the process complexity. This method is achieved in that a strip structure extending over two layers is used to structure the contacts. The strip structure in the first layer is rotated at a predetermined angle with respect to the strip structure in the second layer, and the contacts are formed in the mutually overlapping areas of the strip structures in the two layers.
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Citations
12 Claims
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1. A method of forming a semiconductor device, the method comprising:
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providing a surface that includes a plurality of contacts laid out in a matrix of rows and columns; forming a first plurality of strips over the surface, each strip in the first plurality contacting ones of the contacts disposed along a diagonal of the matrix; forming a second plurality of strips over the surface and over the first plurality of strips, each strip in the second plurality disposed along a row of the matrix; and removing portions of the first plurality of strips not underlying the second plurality of strips. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification