Resonator device, filter, duplexer and communication device

• US 7,095,301 B2
• Filed: 06/02/2004
• Issued: 08/22/2006
• Est. Priority Date: 06/04/2003
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Hidaka, Seiji, Abe, Shin
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): Glenn, Kimberly E
• Application Number:
  US10/857,947
• Publication Number:
  US 20040246072A1
• Time in Patent Office: 811 Days
• Field of Search: 333/219, 333/219.1, 333/202, 333/203, 333/204
• US Class Current: 333/219
• CPC Class Codes: H01P 1/201 Filters for transverse electromagnetic waves H01P1/212, H01P1/213, H01P1/215, H01P1/219 take precedence
• CPC Class Codes: H01P 7/082 Microstripline resonators H01P7/088 takes precedence

Abstract

A resonator device including a plurality of resonance units formed on a dielectric substrate, each resonance unit having a plurality of conductor lines forming a capacitive area and an inductive area in a ring shape.

Claims

1. A resonator device comprising:

a mounting substrate having a conductor formed thereon;

a dielectric substrate mounted on the mounting substrate; and

a plurality of resonance units formed on the dielectric substrate, each resonance unit having a plurality of conductor lines forming a capacitive area and an inductive area in a ring shape,

wherein the capacitive area is formed such that end portions of the plurality of conductor lines of each resonance unit of the plurality of resonance units are made close to each other in a width direction on the dielectric substrate,

the capacitive areas of each of the resonance units are disposed such that a direction of electric-field vectors generated in the capacitive areas is uniform, and

the inductive area is formed by a portion of the conductor lines, except for the capacitive area of the conductor lines formed on the dielectric substrate, and the conductor formed on the mounting substrate.

2. The resonator device as claimed in claim 1, wherein the plurality of conductor lines formed on the dielectric substrate are parallel to each other and a width of at least a part of each conductor line of the plurality of conductor lines is less than a skin depth at a frequency of a signal being propagated on the plurality of conductor lines.

3. A resonator device comprising:

a high-frequency circuit element mounted on the mounting substrate, the high-frequency circuit element including the resonator device as claimed in claim 1, wherein the mounting substrate comprises;

a multilayer substrate having the conductor formed on at least a part of an outer surface thereof, and

a plurality of mounting-side resonance units formed in the multilayer substrate, each mounting-side resonance unit having a plurality of conductor lines forming a mounting-side capacitive area and a mounting-side inductive area in a ring shape,

wherein the mounting-side capacitive area is formed such that end portions of the plurality of conductor lines of each mounting-side resonance unit are made close to each other in a thickness direction of the multilayer substrate through a dielectric layer, and the mounting-side capacitive areas are disposed in the multilayer substrate such that neighboring mounting-side capacitive areas do not overlap each other in the thickness direction, and

wherein the mounting-side inductive area is formed by a portion of the plurality of conductor lines, except for the mounting-side capacitive area of the plurality of conductor lines formed in the multilayer substrate, and the conductor formed on the at least a part of the outer surface of the multilayer substrate.

4. A communication device comprising:

the filter as claimed in claim 3.

5. The resonator device as claimed in claim 1, wherein the plurality of conductor lines formed on the dielectric substrate are parallel to each other and a width of at least a part of each conductor line of the plurality of conductor lines is gradually made smaller from a middle out in a direction perpendicular to an extending direction of the plurality of conductor lines.

8. A resonator device comprising:

a high-frequency circuit element mounted on the mounting substrate, the high frequency circuit element including the resonator device as claimed in claim 2, wherein the mounting substrate comprises;

a multilayer substrate having the conductor formed on at least a part of an outer surface thereof, and

a plurality of mounting-side resonance units formed in the multilayer substrate, each mounting-side resonance unit having a plurality of conductor lines forming a mounting-side capacitive area and a mounting-side inductive area in a ring shape,

wherein the mounting-side capacitive area is formed such that end portions of the plurality of conductor lines of each mounting-side resonance unit are made close to each other in a thickness direction of the multilayer substrate through a dielectric layer, and the mounting-side capacitive areas are disposed in the multilayer substrate such that neighboring mounting-side capacitive areas do not overlap each other in the thickness direction, and

wherein the mounting-side inductive area is formed by a portion of the plurality of conductor lines, except for the mounting-side capacitive area of the plurality of conductor lines formed in the multilayer substrate, and the conductor formed on the at least a part of the outer surface of the multilayer substrate.

17. The resonator device as claimed in any one of claims 1 to 8, wherein at least a part of the conductor or the plurality of conductor lines comprises a superconductor material.

18. A filter comprising:

the resonator device as claimed in claim 17; and

input-output terminals that couple input-output signals to the resonance unit of the resonator device.

19. A duplexer comprising:

a transmission filter; and

a reception filter,

wherein the filter as claimed in claim 18 is used in the transmission filter, in the reception filter, or in both of the transmission filter and the reception filter.

20. A communication device comprising:

the duplexer as claimed in claim 19.

6. A resonator device comprising:

a mounting substrate having a conductor formed thereon;

a dielectric substrate mounted on the mounting substrate; and

a resonance unit having a plurality of conductor lines forming a capacitive area and an inductive area in a ring shape,

wherein the capacitive area is formed such that end portions of the conductor lines of the resonance unit are made close to each other in a thickness direction through at least a dielectric layer on the dielectric substrate,

wherein the inductive area is formed by a portion of the conductor lines, except for the capacitive area of the conductor lines formed on the dielectric substrate, and the conductor formed on the mounting substrate.

7. The resonator device as claimed in claim 6, wherein the plurality of conductor lines formed on the dielectric substrate are parallel to each other and a width of at least a part of each conductor line of the plurality of conductor lines is less than a skin depth at a frequency of a signal being propagated on the plurality of conductor lines.

9. The resonator device as claimed in claim 6, wherein the plurality of conductor lines formed on the dielectric substrate are parallel to each other and a width of at least a part of each conductor line of the plurality of conductor lines is gradually made smaller from a middle out in a direction perpendicular to an extending direction of the plurality of conductor lines.

10. A resonator device comprising:

a multilayer substrate;

a conductor formed on at least a part of an outer surface of the multilayer substrate; and

a plurality of resonance units formed in the multilayer substrate, each resonance unit having a plurality of conductor lines forming a capacitive area and an inductive area in a ring shape,

wherein the capacitive area is formed such that end portions of conductor lines of each resonance unit are made close to each other in a thickness direction of the multilayer substrate through a dielectric layer, and the capacitive areas are disposed in the multilayer substrate such that neighboring capacitive areas do not overlap each other in the thickness direction, and

wherein the inductive area is formed by a portion of the conductor lines, except for the capacitive area of the conductor lines formed in the multilayer substrate, and the conductor formed on the at least a part of the outer surface of the multilayer substrate.

11. The resonator device as claimed in claim 10, wherein a thickness of at least a part of the conductor lines formed in the multilayer substrate is made less than a skin depth at a frequency of a signal being propagated on the conductor lines.

12. The resonator device as claimed in claim 11, wherein a capacitance of the capacitive area of an outermost resonance unit in the thickness direction of the multilayer substrate is larger than a capacitance of the capacitive areas of the other resonance units of the plurality of resonance units.

13. The resonator device as claimed in claim 11, wherein the plurality of resonance units are formed such that a capacitance of the capacitive area of the resonance units increases from a middle portion of the multilayer substrate along the thickness direction of the multilayer substrate.

14. The resonator device as claimed in claim 10, wherein a capacitance of the capacitive area of an outermost resonance unit in the thickness direction of the multilayer substrate is larger than a capacitance of the capacitive areas of the other resonance units of the plurality of resonance units.

15. The resonator device as claimed in claim 10, wherein the plurality of resonance units are formed such that a capacitance of the capacitive area of the resonance units increases from a middle portion of the multilayer substrate along the thickness direction of the multilayer substrate.

16. The resonator device as claimed in claim 10, wherein the conductor lines formed in the multilayer substrate are a plurality of conductor lines parallel to each other and a width of at least a part of each conductor line is gradually made smaller from a middle out in a direction perpendicular to an extending direction of the conductor lines.