Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect
First Claim
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1. A method of cleaning a plasma etching reactor, comprising:
- generating a first plasma from both oxygen gas and a hydrogen-containing gas;
exposing one or more interior surfaces of the reactor to the first plasma to remove material deposited on the interior surfaces of the reactor.generating a second plasma from the oxygen gas; and
exposing the one or more interior surfaces of the reactor to the second plasma to remove material deposited on the interior surfaces of the reactor.
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Abstract
A method of cleaning a plasma etching reactor is provided. The method of cleaning a plasma etching reactor includes generating one or more plasmas from oxygen gas and a hydrogen-containing gas, and exposing interior surfaces of the reactor to the plasma(s) from the oxygen-gas and the hydrogen-containing gas. The cleaning method is used to remove deposited material, such as deposits containing fluorine, carbon, oxygen, and hydrogen from interior surfaces of the reactor. The hydrogen-containing gas may contribute to the cleaning method by providing a source of hydrogen that removes fluorine from the surfaces of the reactor.
38 Citations
15 Claims
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1. A method of cleaning a plasma etching reactor, comprising:
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generating a first plasma from both oxygen gas and a hydrogen-containing gas; exposing one or more interior surfaces of the reactor to the first plasma to remove material deposited on the interior surfaces of the reactor. generating a second plasma from the oxygen gas; and exposing the one or more interior surfaces of the reactor to the second plasma to remove material deposited on the interior surfaces of the reactor. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of cleaning a plasma etching reactor, comprising:
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generating a first plasma from both a hydrogen-containing gas and H2O gas wherein the hydrogen-containing gas is selected from the group consisting of H2, H2O2, NH3, CH3F, and combinations thereof; exposing one or more interior surfaces of the reactor to the first plasma to remove material deposited on the interior surfaces of the reactor; generating a second plasma from oxygen gas; and exposing the one or more interior surfaces of the reactor to the second plasma to remove material deposited on the interior surfaces of the reactor. - View Dependent Claims (8, 9)
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10. A method of cleaning a plasma etching reactor, comprising:
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generating a first plasma from oxygen gas; exposing one or more interior surfaces of the reactor to the second plasma to remove material deposited on the interior surfaces of the reactor; generating a second plasma from both hydrogen-containing gas and H2O gas, wherein the hydrogen-containing gas is selected from the group consisting of H2, H2O2, NH3, CH3F, and combinations thereof; and exposing the one or more interior surfaces of the reactor to the second plasma to remove material deposited on the interior surfaces of the reactor. - View Dependent Claims (11, 12)
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13. A method of cleaning a plasma etching reactor, comprising:
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exposing one or more interior surfaces of the reactor to a first plasma from both oxygen gas and a hydrogen-containing gas; exposing the one or more interior surfaces of the reactor to a second plasma from oxygen gas; and removing material deposited on the interior surfaces of the reactor.
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14. A method of cleaning a plasma etching reactor, comprising:
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exposing one or more interior surfaces of the reactor to a first plasma from both H2O gas and a hydrogen-containing gas selected from the group consisting of H2, H2O2, NH3, CH3F, and combinations thereof; exposing the one or more interior surfaces of the reactor to a second plasma from oxygen gas; and removing material deposited on the interior surfaces of the reactor.
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15. A method of cleaning a plasma etching reactor, comprising:
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exposing one or more interior surfaces of the reactor to a first plasma from oxygen gas; exposing the one or more interior surfaces of the reactor to a second plasma from H2O gas and a hydrogen-containing gas selected from the group consisting of H2, H2O2, NH3, CH3F, and combinations thereof; and removing material deposited on the interior surfaces of the reactor.
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Specification