Light emitting device, method of preparing the same and device for fabricating the same

• US 7,098,069 B2
• Filed: 01/22/2003
• Issued: 08/29/2006
• Est. Priority Date: 01/24/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuwabara, Hideaki, Hiroki, Masaaki, Yamazaki, Shunpei, Murakami, Masakazu
• Primary Examiner(s): LOUIE, WAI SING
• Application Number:
  US10/349,750
• Publication Number:
  US 20030183830A1
• Time in Patent Office: 1,315 Days
• Field of Search: 349 38- 39, 349 45- 47, 349139-144, 438/99, 257/40
• US Class Current: 438/99
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.

Claims

1. A method of fabricating a light emitting device having a plurality of light emitting elements comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound,

forming a silicon nitride film containing hydrogen over said cathode, and

performing a treatment for terminating a drawback in said light emitting layer comprising organic compound with said silicon nitride film containing hydrogen.

2. A method of fabricating a light emitting device having a plurality of light emitting elements comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound;

forming a diamond like carbon film containing hydrogen over said cathode, and

performing a treatment for terminating a drawback in said light emitting layer comprising organic compound with said diamond like carbon film containing hydrogen.

3. A method of fabricating a light emitting device having a plurality of light emitting elements comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound;

forming a silicon nitride film containing hydrogen over said anode, and

performing a treatment for terminating a drawback in said light emitting layer comprising organic compound with said silicon nitride film containing hydrogen.

4. A method of fabricating a light emitting device having a plurality of light emitting elements comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound;

forming a diamond like carbon film containing hydrogen over said anode, and

performing a treatment for terminating a drawback in said light emitting layer comprising organic compound with said diamond like carbon film containing hydrogen.

5. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound; and

forming a silicon nitride film containing hydrogen over said cathode,

wherein hydrogen plasma is generated in the step of forming said silicon nitride film containing hydrogen, and

a treatment with said hydrogen plasma is performed for said light emitting layer comprising organic compound.

6. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound; and

forming a diamond like carbon film containing hydrogen over said cathode,

wherein hydrogen plasma is generated in the step of forming the diamond like carbon film containing hydrogen, and

a treatment with said hydrogen plasma is performed for said light emitting layer comprising organic compound.

7. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound; and

forming a silicon nitride film containing hydrogen over said anode,

wherein hydrogen plasma is generated in the step of forming said silicon nitride film containing hydrogen, and

a treatment with said hydrogen plasma is performed for said light emitting layer comprising organic compound.

8. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound; and

forming a diamond like carbon film containing hydrogen over said anode,

wherein hydrogen plasma is generated in the step of forming said diamond like carbon film containing hydrogen, and

a treatment with said hydrogen plasma is performed for said light emitting layer comprising organic compound.

9. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over an anode;

forming a cathode over said light emitting layer comprising organic compound;

forming a silicon nitride film containing hydrogen over the cathode; and

performing a heat treatment to diffuse hydrogen from the silicon nitride film containing hydrogen to the light emitting layer comprising organic compound.

10. A method of fabricating a light emitting device comprising:

forming a light emitting layer comprising organic compound over a cathode;

forming an anode over said light emitting layer comprising organic compound;

forming a silicon nitride film containing hydrogen over the anode; and

performing a heat treatment to diffuse hydrogen from the silicon nitride film containing hydrogen to the light emitting layer comprising organic compound.