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Method of making mirror image memory cell transistor pairs featuring poly floating spacers

  • US 7,098,106 B2
  • Filed: 07/01/2004
  • Issued: 08/29/2006
  • Est. Priority Date: 07/01/2004
  • Status: Expired due to Fees
First Claim
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1. A method of making mirror image non-volatile memory transistor pairs comprising:

  • building a pair of spaced apart poly floating gate structures in a isolation region of a semiconductor substrate having a surface upon which said structures are built with a gap therebetween, each structure spaced from the substrate by tunnel oxide and having opposed sidewalls on opposite sides thereof;

    forming a pair of first subsurface electrodes adjacent sidewalls of the floating gate structures;

    disposing a first poly spacer spaced apart by tunnel oxide to a sidewall of each floating gate structure;

    after formation of the first poly spacers, forming a second subsurface electrode between the first subsurface electrodes;

    forming a second poly spacer in electrically contacting relation relative to a sidewall of each floating gate structure and electrically joined to a respective first poly spacer, the second poly spacer in contact relation joining a floating gate structure and a first poly spacer;

    forming a control gate in insulative relation over each floating gate structure.

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