Semiconductor device, method for manufacturing the same, circuit substrate, electro-optical apparatus, and electronic equipment
First Claim
1. A method for manufacturing a semiconductor comprising:
- forming a plurality of electrodes on portions of a semiconductor elementforming a first conductive layer by electroless nickel plating on the plurality of the electrodes before applying a layer of a resin in a subsequent step;
applying the layer of the resin to the semiconductor element in a region of the semiconductor element that does not include the electrodes, the layer of the resin being applied such that a height of the layer of the resin is greater than a height of the electrodes;
forming a second conductive layer over the plurality of the electrodes and the layer of the resin, the second conductive layer being connected to the first conductive layer and covering a top surface of the layer of the resin;
patterning the second conductive layer on the electrodes and the layer of the resin in a predetermined pattern; and
removing portions of the layer of the resin using the patterned second conductive layer as a mask so that remaining portions of the layer of the resin form a plurality of protrusions.
1 Assignment
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Accused Products
Abstract
A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.
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Citations
4 Claims
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1. A method for manufacturing a semiconductor comprising:
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forming a plurality of electrodes on portions of a semiconductor element forming a first conductive layer by electroless nickel plating on the plurality of the electrodes before applying a layer of a resin in a subsequent step; applying the layer of the resin to the semiconductor element in a region of the semiconductor element that does not include the electrodes, the layer of the resin being applied such that a height of the layer of the resin is greater than a height of the electrodes; forming a second conductive layer over the plurality of the electrodes and the layer of the resin, the second conductive layer being connected to the first conductive layer and covering a top surface of the layer of the resin; patterning the second conductive layer on the electrodes and the layer of the resin in a predetermined pattern; and removing portions of the layer of the resin using the patterned second conductive layer as a mask so that remaining portions of the layer of the resin form a plurality of protrusions. - View Dependent Claims (2, 3, 4)
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Specification