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Interconnect structure diffusion barrier with high nitrogen content

  • US 7,098,537 B2
  • Filed: 11/21/2003
  • Issued: 08/29/2006
  • Est. Priority Date: 11/21/2003
  • Status: Expired due to Fees
First Claim
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1. An integrated circuit comprising a set of active devices connected by a set of interconnect structures having at least one via extending to make electrical contact with another circuit element, in which at least some of the interconnect structures are formed by a conductive material embedded in an interlevel dielectric, the conductive material being separated from the dielectric by at least one liner layer having a substantially uniform chemical composition, in which said at least one liner layer is formed from a liner material having a thickness of less than 4 nm and comprising Tantalum and Nitrogen in an atomic concentration ratio less than 1.5 N:

  • Ta and greater than 1.2 with a failure temperature greater than 730 degrees Centigrade.

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