High power, high linearity and low insertion loss single pole double throw transmitter/receiver switch
First Claim
1. A switch comprising:
- a plurality of dual-gate field effect transistors connected in series, each dual-gate field effect transistor including two gates, a source, and a drain;
one of said series connected dual-gate field effect transistors having a modified gate therein, said modified gate having a length that is of a different size from gate lengths of other series connected dual-gate field effect transistors.
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Accused Products
Abstract
A high performance single-pole-double-throw (SPDT) Transmitter/Receiver (T/R) FET switch utilizes a plurality of multi-gate FETs in series to realize low insertion loss, low harmonic distortion and high power handling capabilities. The SPDT switch consists of an antenna port, a transmitter branch coupled to a transmitter port through a plurality of multi-gate FETs in series and a receiver branch coupled to a receiver port through a plurality of multi-gate FETs in series. When a high power signal passes from the transmitter port to the antenna port through the transmitter branch, the receiver branch is required to be shut off electrically to prevent the high power signal from leaking to receiver port. This leakage can degrade the isolation of the switch and cause harmonic distortion. Furthermore, the transmitter branch is required to provide a resistance as small as possible to reduce the power loss when it passes through the transmitter branch to the antenna port. In the receiver branch, two of the gate metals in the multi-gate FETs are fabricated with gate sizes several times larger than the others. Furthermore, a heavily doped cap layer is utilized between the gate fingers in a multi-gate FET to reduce the channel resistance of FET, thereby lowering the insertion loss.
58 Citations
32 Claims
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1. A switch comprising:
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a plurality of dual-gate field effect transistors connected in series, each dual-gate field effect transistor including two gates, a source, and a drain; one of said series connected dual-gate field effect transistors having a modified gate therein, said modified gate having a length that is of a different size from gate lengths of other series connected dual-gate field effect transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A switch comprising:
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a plurality of dual-gate field effect transistors connected in series, each dual-gate field effect transistor including two gates, a source, and a drain; one of said series connected dual-gate field effect transistors having a modified gate therein that is of a different size from gates of other series connected dual-gate field effect transistors; said dual-gate field effect transistors include a transistor connection segment between said gates and a heavily doped cap layer fabricated upon said transistor connection segment between said gates.
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10. A high-electron-mobility-transistor, comprising:
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two gate fingers; a transistor connection segment between said gate fingers; and a heavily doped cap layer fabricated upon said transistor connection segment between said gate fingers; said gate fingers being of different sizes. - View Dependent Claims (11, 12)
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13. A radio frequency single pole double throw switch, comprising:
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a receiver port; a transmitter port; an antenna port; a receiver section connecting said receiver port to said antenna; and a transmitter section connecting said transmitter port to said antenna; said receiver section including a plurality of dual-gate field effect transistors connected in series, each dual-gate field effect transistor including two gates, a source, and a drain such that one of said series connected dual-gate field effect transistors has a modified gate therein, said modified gate having a length that is of a different size from gate lengths of other series connected dual-gate field effect transistors. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A radio frequency single pole double throw switch comprising:
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a receiver port; a transmitter port; an antenna port; a receiver section connecting said receiver port to said antenna; and a transmitter section connecting said transmitter port to said antenna; said receiver section including a plurality of dual-gate field effect transistors connected in series, each dual-gate field effect transistor including two gates, a source, and a drain such that one of said series connected dual-gate field effect transistors has a modified gate therein that is of a different size from gates of other series connected dual-gate field effect transistors; said dual-gate field effect transistors include a transistor connection segment between said gates and a heavily doped cap layer fabricated upon said transistor connection segment between said gates.
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26. A radio frequency single pole double throw switch comprising:
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a receiver port; a transmitter port; an antenna port; a receiver section connecting said receiver port to said antenna; and a transmitter section connecting said transmitter port to said antenna; said receiver section including, a first receiver dual-gate high electron mobility transistor having gates of different lengths, and a second receiver dual-gate high electron mobility transistor having gates of different lengths; said transmitter section including a first transmitter dual-gate high electron mobility transistor having gates of different lengths and a second transmitter dual-gate high electron mobility transistor having gates of different lengths; said first transmitter dual-gate high electron mobility transistor having a source, said source being connected to said receiver port and the drain of said second transmitter dual-gate high electron mobility transistor is connected to said antenna port. - View Dependent Claims (27, 28, 29, 30, 31, 32)
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Specification