Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
First Claim
1. A method for forming a common ground for an microelectromechanical device comprising acts of:
- patterning a common ground plane layer on a substrate;
forming a dielectric layer on the common ground plane layer;
depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and
depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground electrical contact for the regions of the conducting layer, wherein the method for forming the common ground for the microelectromechanical device further comprising acts ofdepositing a sacrificial layer on the dielectric layer and the conducting layer, the sacrificial layer having a thickness; and
etching a plurality of tooth regions into the sacrificial layer proximate a portion of the conducting layer, such that the tooth regions, in a final device, provide a reduced adhesion area when the device closes.
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Accused Products
Abstract
The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.
32 Citations
7 Claims
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1. A method for forming a common ground for an microelectromechanical device comprising acts of:
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patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground electrical contact for the regions of the conducting layer, wherein the method for forming the common ground for the microelectromechanical device further comprising acts of depositing a sacrificial layer on the dielectric layer and the conducting layer, the sacrificial layer having a thickness; and etching a plurality of tooth regions into the sacrificial layer proximate a portion of the conducting layer, such that the tooth regions, in a final device, provide a reduced adhesion area when the device closes. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification