Method for manufacturing a semiconductor device and method for forming high-dielectric-constant film

• US 7,101,753 B2
• Filed: 03/30/2004
• Issued: 09/05/2006
• Est. Priority Date: 12/26/2003
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Arikado, Tsunetoshi, Kamiyama, Satoshi
• Primary Examiner(s): Pham, Long
• Application Number:
  US10/811,979
• Publication Number:
  US 20050139937A1
• Time in Patent Office: 889 Days
• Field of Search: 438/197, 438/240
• US Class Current: 438/240
• CPC Class Codes: H01L 21/02148 the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02332 into an oxide layer, e.g. changing SiO to SiON
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02345 treatment by exposure to radiation, e.g. visible light
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/3143 composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 : the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 : the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A semiconductor device having a gate electrode on a silicon substrate via a gate insulating film is formed by laminating the gate insulating film with a silicon oxide film, formed on the silicon substrate, an Hf silicate film is formed on the silicon oxide film, and a nitrogen-containing Hf silicate film formed on the Hf silicate film, and containing Hf in a peak concentration in a range from one atomic % to thirty atomic %, and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic %.

Claims

1. A method of manufacturing a semiconductor device comprising:

forming a base interface layer on a substrate;

forming a metal silicate film containing a metal in a peak concentration in a range from one atomic % to thirty atomic % on said base interface layer;

forming a nitrogen-containing metal silicate film containing nitrogen in a peak concentration in a range from ten atomic % to thirty atomic % on said metal silicate film; and

forming a gate electrode on said nitrogen-containing metal silicate film, wherein forming said metal silicate film includes, repeatedly;

forming a metal oxide film by supplying a metal-containing material, and then supplying an oxygen-based gas, to said substrate;

forming a silicon oxide film by supplying a silicon-containing material, and then supplying an oxygen-based gas, to said substrate; and

controlling the number of cycles of forming said metal oxide film and forming said silicon oxide film.

2. The method of manufacturing a semiconductor device according to claim 1, including repeatedly forming said metal oxide film by:

supplying said metal-containing material to said substrate;

supplying said oxygen-based gas to said substrate; and

radiating the surface of said substrate with light for up to several milliseconds.

3. The method of manufacturing a semiconductor device according to claim 1, including repeatedly forming said silicon oxide film by:

supplying said silicon-containing material to said substrate;

supplying said oxygen-based gas to said substrate; and

radiating the surface of said substrate with light for up to several milliseconds.

4. A method of manufacturing a semiconductor device comprising:

forming a base interface layer on a substrate;

forming a metal silicate film containing a metal in a peak concentration in a range from five atomic % to forty atomic % on said base interface layer;

forming a nitrogen-containing metal silicate film containing a metal in a peak concentration in a range from one atomic % to thirty atomic % and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic % on said metal silicate film; and

forming a gate electrode on said nitrogen-containing metal silicate film, wherein forming said metal silicate film includes, repeatedly;

forming a metal oxide film by supplying a metal-containing material, and then supplying an oxygen-based gas, to said substrate;

forming a silicon oxide film by supplying a silicon-containing material, and then supplying an oxygen-based gas, to said substrate; and

controlling the number of cycles of forming said metal oxide film and forming said silicon oxide film.

5. The method of manufacturing a semiconductor device according to claim 4, including repeatedly forming said metal oxide film by:

supplying said metal-containing material to said substrate;

supplying said oxygen-based gas to said substrate; and

radiating the surface of said substrate with light for up to several milliseconds.

6. The method of manufacturing a semiconductor device according to claim 4, including repeatedly forming said silicon oxide film by:

supplying said silicon-containing material to said substrate;

supplying said oxygen-based gas to said substrate; and

radiating the surface of said substrate with light for up to several milliseconds.

7. A method of manufacturing a semiconductor device comprising:

forming a base interface layer on a substrate;

forming a metal silicate film containing a metal in a peak concentration in a range from five atomic % to forty atomic % on said base interface layer;

forming a nitrogen-containing metal silicate film containing a metal in a peak concentration in a range from one atomic % to thirty atomic % and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic % on said metal silicate film; and

forming a gate electrode on said nitrogen-containing metal silicate film, wherein forming said nitrogen-containing metal silicate film comprises;

forming a base metal silicate film containing a metal in a peak concentration in a range from one atomic % to thirty atomic %; and

introducing nitrogen into said base metal silicate film in a peak concentration in a range from ten atomic % to thirty atomic % by nitriding said metal silicate film.

8. The method of manufacturing a semiconductor device according to claim 7, wherein forming a base metal silicate film includes:

forming a metal oxide film by supplying a metal-containing material, and then supplying an oxygen-based gas, to said substrate; and

forming a silicon oxide film by supplying a silicon-containing material, and then supplying an oxygen-based gas, to said substrate; and

controlling the number of cycles of forming said metal oxide film and forming said silicon oxide film to form said metal silicate film.

9. The method of manufacturing a semiconductor device according to claim 8, including repeatedly forming said metal oxide film by:

supplying said metal-containing material to said substrate;

supplying said oxygen-based gas to said substrate; and

radiating the surface of said substrate with light for up to several milliseconds.

10. The method of manufacturing a semiconductor device according to claim 8, including repeatedly forming said silicon oxide film by:

supplying said silicon-containing material to said substrate;

supplying said oxygen-based gas to said substrate; and

radiating the surface of said substrate with light for up to several milliseconds.

11. A method of forming a high-dielectric-constant film on a substrate comprising sequentially:

supplying a first source gas that contains at least one element of elements constituting a high-dielectric-constant film into a housing where a substrate is located;

after stopping supplying of the first source gas, supplying a second source gas into the housing, the second source gas reacting with said first source gas and forming the high-dielectric-constant film; and

after stopping supplying of the second source gas, heating the surface of the substrate by radiating the surface of the substrate with light for up to several milliseconds.

12. The method for forming a high-dielectric-constant film according to claim 11, including radiating the substrate with light for a time in a range of 0.8 to 20 miliseconds.