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Strained semiconductor device structures

  • US 7,102,201 B2
  • Filed: 07/15/2004
  • Issued: 09/05/2006
  • Est. Priority Date: 07/15/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device structure comprising:

  • a body of a semiconductor material including a channel region;

    a conductive gate electrode;

    a gate insulator separating said gate electrode from said channel region of said body;

    first and second source/drain regions defined in the semiconductor material of said body, said first and second source/drain regions disposed on opposite sides of said gate electrode such that said channel region separates said first source/drain region from said second source/drain region; and

    a plurality of plugs disposed in at least one of said first and second source/drain regions, said plurality of plugs being formed from a volume-expanded material that transfers compressive stress to said channel region.

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