Method and apparatus of growing a thin film onto a substrate

• US 7,105,054 B2
• Filed: 04/16/2001
• Issued: 09/12/2006
• Est. Priority Date: 04/14/2000
• Status: Expired due to Term

• Current Assignee: ASM International NV
• Original Assignee: ASM International NV
• Inventors: Lindfors, Sven
• Primary Examiner(s): Kunemund, Robert
• Assistant Examiner(s): Song, Matthew J.
• Application Number:
  US09/836,674
• Publication Number:
  US 20020108570A1
• Time in Patent Office: 1,975 Days
• Field of Search: 117/84, 117/88, 117/89, 117/93, 117/102
• US Class Current: 117/84
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45546 specially adapted for a substrate stack in the ALD reactor
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/08 Reaction chambers; Selection of materials therefor
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

A method and an apparatus for growing a thin film onto a substrate by the ALD process. The apparatus comprises a reaction chamber into which the substrate can be disposed; a plurality of inlet channels communicating with said reaction chamber, said inlet channels being suited for feeding the reactants employed in a thin-film growth process in the form of vapor-phase pulses into said reaction chamber; at least one outlet channel communicating with said reaction chamber, said outlet channel being suited for the outflow of reaction products and excess amounts of reactants from said reaction space; and a pre-reaction chamber arranged immediately upstream of the reaction chamber, said pre-reaction chamber forming a first reaction zone, in which the reactants of successive vapor-phase pulses can be reacted with each other in the vapor phase to form a solid product, whereas said reaction chamber forming a second reaction zone can be operated under conditions conducive to ALD growth of a thin film.

Claims

1. A method for growing a thin film on a surface of a substrate in a reactor according to the ALD method, said method comprising:

providing a first conduit for delivering a pulse of a first vapor phase reactant and a second conduit for delivering a pulse of a second vapor phase reactant to said reactor;

providing at least a first substrate in a pre-reaction chamber that is defined by a plurality of walls and a second substrate in a reaction chamber, said first substrate being positioned downstream of a point in the pre-reaction chamber where both said first and said second phase reactants have entered the pre-reaction chamber and said pre-reaction chamber being aligned downstream with said reaction chamber and having a single outlet that is directly connected with said reaction chamber, and said first substrate being a separate element from the walls of the pro-reaction chamber;

feeding the pulse of the first vapor phase reactant into said pre-reaction chamber and over the first substrate and subsequently into said reaction chamber and over the second substrate;

reacting the first vapor phase reactant with said surface of said first substrate and subsequently, with a surface of said second substrate to form a thin film on said first and second substrates, wherein residual first vapor phase reactant remains in said pre-reaction chamber; and

feeding a pulse of a second vapor phase reactant into said reactor, wherein said second vapor phase reactant reacts with said residual first vapor phase reactant to form a solid reaction product in said pre-reaction chamber on said first substrate and said second vapor phase reactant subsequently reacts with said surface of said second substrate in said reaction chamber.

2. The method of claim 1, wherein said residual first vapor phase reactant is in the gas phase.

3. The method of claim 1, wherein said residual first vapor phase reactant is adsorbed on the walls of the reaction chamber.

4. The method of claim 1, wherein said reaction chamber comprises a pre-reaction chamber in which the first substrate is positioned and a second reaction chamber in which the second substrate is positioned, wherein said pre-reaction chamber is upstream of said second reaction chamber.

5. The method of claim 4, wherein said second reaction chamber is operated under conditions conducive to ALD.

6. The method of claim 4, wherein said residual first vapor phase reactant is present in said pre-reaction chamber.

7. The method of claim 4, wherein said reaction product is formed in said pre-reaction chamber.

8. The method of claim 4, wherein said pre-reactor is placed immediately adjacent to the said second reaction chamber and it is adapted to be freely communicating with the second reaction chamber.

9. The method of claim 4, wherein said pre-reactor is opened under conditions conducive to chemical vapor deposition so as to form said solid reaction product.

10. The method of claim 4, wherein said second vapor phase reactant is reacted with the residual first vapor phase reactant to form said solid reaction product so as to deplete the residual first vapor phase reactant, thereby preventing said residual first vapor phase reactant from entering said second reaction chamber.

11. The method of claim 4, wherein the pre-reactor is operated at the same temperature as the second reactor.

12. The method of claim 4, wherein the reaction product is formed on the inner walls of the pre-reactor, and the reaction product is removed horn the pre-reactor by cleaning the walls.

13. The method of claim 4, wherein a concentration of said residual first vapor phase reactant in said pre-reactor is reduced to less than I ppm by reacting said residual first vapor phase reactant with said second vapor phase reactant.

14. The method of claim 4, wherein a concentration of said residual first vapor phase reactant in said pre-reactor is reduced to a concentration of less than 1 vol-% by reacting said residual first vapor phase reactant with said second vapor phase reactant.

15. The method of claim 1, further comprising repeatedly alternately feeding at least said first vapor phase reactant and said second vapor phase reactant.

16. The method of claim 1, further comprising feeding a plurality of vapor phase reactants into said reactor.

17. The method of claim 1, wherein said second vapor phase reactant reacts with said residual first vapor phase reactant under conditions conducive to chemical vapor deposition.

18. The method of claim 1, further comprising feeding an inactive gas into said reactor after feeding said first vapor phase reactant or said second vapor phase reactant.

19. The method of claim 18, further comprising evacuating said reaction chamber while (ceding said inactive gas.

20. The method of claim 1, wherein a pressure in said reaction chamber is in the range of 1 to 100 mbar.