Method of manufacturing a semiconductor device
First Claim
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1. A method of manufacturing a semiconductor device comprising:
- forming a first circuit, wherein said first circuit comprises a plurality of semiconductor elements, each of said plurality of semiconductor elements being formed by;
forming a semiconductor island over a substrate;
forming an insulating film over said semiconductor island; and
forming an electrode over said insulating film, said semiconductor island being used to form a channel region;
forming a second circuit; and
forming at least one secondary coil over said insulating film;
wherein said at least one secondary coil is electrically connected to said second circuit, wherein said second circuit is electrically connected to said first circuit, and wherein said second circuit is for generating a driving signal selected from the group consisting of clock signal, a start pulse signal, and a video signal.
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Abstract
The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing cost by eliminating wastes to keep a defective product forming.
An electromotive force generated by electromagnetic induction is rectified and shaped by using primary coils formed on a check substrate and secondary coils formed on an array substrate, whereby a power source voltage and a driving signal are supplied to circuits or circuit elements on a TFT substrate so as to be driven.
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Citations
50 Claims
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1. A method of manufacturing a semiconductor device comprising:
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forming a first circuit, wherein said first circuit comprises a plurality of semiconductor elements, each of said plurality of semiconductor elements being formed by;
forming a semiconductor island over a substrate;
forming an insulating film over said semiconductor island; and
forming an electrode over said insulating film, said semiconductor island being used to form a channel region;
forming a second circuit; and
forming at least one secondary coil over said insulating film;
wherein said at least one secondary coil is electrically connected to said second circuit, wherein said second circuit is electrically connected to said first circuit, and wherein said second circuit is for generating a driving signal selected from the group consisting of clock signal, a start pulse signal, and a video signal. - View Dependent Claims (2, 3, 4, 5, 31, 37, 43, 44, 49)
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6. A method of manufacturing a semiconductor device comprising:
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forming a first circuit, wherein said first circuit comprises a plurality of semiconductor elements, each of said plurality of semiconductor elements being formed by forming a semiconductor island over a substrate;
forming an insulating film over said semiconductor island; and
forming an electrode over said insulating film , said semiconductor island being used to form a channel region;
forming a second circuit; and
forming at least one secondary coil over said insulating film;
wherein said at least one secondary coil is electrically connected to said second circuit;
wherein said second circuit is electrically connected to said first circuit, and wherein said second circuit is for supplying a source power voltage. - View Dependent Claims (7, 8, 9, 10, 32, 38, 45, 46)
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11. A method of manufacturing a semiconductor device comprising:
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forming a first circuit, wherein said first circuit comprises a plurality of semiconductor elements, each of said plurality of semiconductor elements being formed by;
forming a semiconductor island over a substrate;
forming an insulating film over said semiconductor island; and
forming an electrod over said insulating film, said semiconductor island being used to form a channel regiom forming a second circuit; and
forming at least one secondary coil over said insulating film;
wherein said at least one secondary coil is electrically connected to said second circuit;
wherein said second circuit is electrically connected to said first circuit, and wherein said second circuit comprises at least one of a rectifier circuit and a waveform shaping circuit. - View Dependent Claims (12, 13, 14, 15, 33, 39, 47)
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16. A method of manufacturing a semiconductor device comprising
forming a first circuit, wherein said first circuit comprises a plurality of elements, each of plurality of semiconductor elements being formed by: -
forming a semiconductor island over a substrate;
forming an insulating film over said semiconductor island; and
forming an electrode over said insulating film, said semiconductor island being used to form a channel region;
forming a second circuit; and
forming at least one secondary coil over said insulating film;
inducing a voltage in said at least one secondary coil by applying a magnetic field thereto whereby an electric current flows through at least a part of said second circuit; and
wherein said at least one secondary coil is electrically connected to said second circuit, wherein said second circuit is electrically connected to said first circuit, and wherein said second circuit comprises at least one of a rectifer circuit and a waveform shaping circuit. - View Dependent Claims (17, 18, 19, 20, 34, 40, 48)
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21. A method of manufacturing a semiconductor device comprising:
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forming a circuit, wherein said circuit comprises a plurality of semiconductor elements, each of said plurality of semiconductor elements being formed by;
forming a semiconductor island over a substrate, said semiconductor island bein used to form a channel region;
forming a gate insulating film over said semiconductor island; and
forming a gate electroe on said gate insulating film;
forming at least one secondary coil on said gate i nsulating film;
wherein said at least one secondary coil is electrically connected to said circuit, and wherein said gate electrod is comprises of a same material as said secondary coil. - View Dependent Claims (22, 23, 24, 25, 35, 41)
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26. A method of manufacturing a semiconductor device comprising:
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forming a circuit, wherein said circuit comprises a plurality of semiconductor elements, each of said plurality of semiconductor elements being formed by;
forming a semiconductor island over a substrate, said semiconductor island being used to form a channel region;
forming a gate insulating film over said semiconductor island; and
formng a gate electrode on said gate insulating film;
forming at least one secondary coil on said gate insulating film;
wherein said at least one secondary coil is electrically connected to said circuit;
wherein said gate electrode is comprised of a same material as said secondary coil; and
inducing a voltage in said at least one secondary coil by applying a magnetic field thereto whereby an electric current flows through at least a part of said circuit. - View Dependent Claims (27, 28, 29, 30, 36, 42, 50)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsHiroki, Masaaki, Yamazaki, Shunpei
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Primary Examiner(s)TSAI, H JEY
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Application NumberUS10/102,277Publication NumberTime in Patent Office1,639 DaysField of Search438/14, 438 17- 18, 438 22- 24, 438/34, 438/57US Class Current438/14CPC Class CodesG01R 31/2601 Apparatus or methods theref...G01R 31/2607 Circuits therefor G01R31/26...G01R 31/3025 Wireless interface with the...G09G 3/006 Electronic inspection or te...H01L 22/14 for electrical parameters, ...H01L 27/1255 integrated with passive dev...
