Electronic device contact structures

• US 7,105,861 B2
• Filed: 06/18/2004
• Issued: 09/12/2006
• Est. Priority Date: 04/15/2003
• Status: Expired due to Term

• Current Assignee: Formosa Epitaxy Incorporated (Ennostar, Inc.)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Erchak, Alexei A., Lidorikis, Eleftrios, Graff, John W.
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US10/871,877
• Publication Number:
  US 20050051785A1
• Time in Patent Office: 816 Days
• Field of Search: 257/99, 257/734, 257/773, 257/775
• US Class Current: 257/99
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 6/4298 coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Electronic device contact structures are disclosed.

Claims

1. An electronic device, comprising:

a material body designed for use in an electronic device, the material body having a surface; and

a contact structure supported by the surface of the material body, the contact structure comprising;

a patterned conductive layer having an interior portion; and

a patterned insulating layer having edges and being disposed between the interior portion of the patterned conductive layer and the surface of the material body, the insulating layer being patterned such that the conductive layer extends past all edges of the insulating layer to form an electrical contact to the material body, wherein the electronic device is a photonic lattice light emitting diode.

2. The device of claim 1, wherein the patterned conductive layer comprises a metal.

3. The device of claim 1, wherein the patterned insulating layer comprises an oxide.

4. The device of claim 1, wherein the patterned insulating layer is tapered in shape.

5. The device of claim 1, wherein the patterned insulating layer is substantially triangular in shape.

6. The device of claim 1, wherein the patterned conductive layer is tapered in shape.

7. The device of claim 1, wherein the patterned conductive layer is substantially triangular in shape.

8. The device of claim 7, wherein the patterned insulating layer has a smaller area than the patterned conductive layer.

9. The device of claim 8, wherein a length of the patterned insulating layer is about the same as a length of the patterned conductive layer.

10. The device of claim 1, wherein the patterned conductive layer includes:

at least one pad; and

at least one contact.

11. The device of claim 10, wherein the patterned insulating layer is disposed between at least one contact and the surface of the material body.

12. The device of claim 11, wherein the patterned insulating layer is larger at an end adjacent to the pad.

13. The device of claim 1, wherein top surface of the material body is substantially rectangular in shape.

14. The device of claim 1, wherein an aspect ratio of the surface of the material body is 4×

3.

15. The device of claim 1, wherein an aspect ratio of the surface of the material body is 16×

9.

16. A device, comprising:

a semiconductor die having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the semiconductor die;

a second conductive pad disposed along the second side of the surface layer of the semiconductor die;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the semiconductor die; and

an insulating layer disposed between an interior portion of at least some of the plurality of conductive contacts and the top layer of the semiconductor die, wherein the semiconductor die is a light emitting diode (LED) die.

17. The device of claim 16 wherein the first conductive pad is substantially parallel to the second conductive pad.

18. The device of claim 16, wherein the insulating layer is patterned such that a first portion of one of the plurality of conductive contacts is supported by the insulating layer and a second portion of one of the plurality of conductive contacts is supported by a top layer of the semiconductor die such that the second portion of one of the plurality of conductive contacts is in electrical contact with the surface layer of the semiconductor die.

19. The device of claim 18, wherein the insulating layer extends from at least one of the first and second pads toward the central area of the semiconductor die.

20. The device of claim 19, wherein the insulating layer is larger at a first end that extends from at least one of the first and second pads than at a second end near the central area of the semiconductor die.

21. The device of claim 16, wherein the plurality of conductive contacts are rectangular in shape.

22. The device of claim 16, wherein the plurality of conductive contacts are tapered in shape such that a portion of at least one of the plurality of contacts near the at least one of the first and second pads is larger than a portion of the contact near the central area of the semiconductor die.

23. The device of claim 16, wherein each of the plurality of conductive contacts are connected at a first end to the first conductive pad and at a second end to the second conductive pad.

24. The device of claim 16, wherein the semiconductor die is rectangular.

25. The device of claim 16, wherein an aspect ratio of the surface layer of the semiconductor die is 4×

3.

26. The device of claim 16, wherein the aspect ratio of the surface layer of the semiconductor die is 16×

9.

27. The device of claim 16, wherein the LED die is a photonic lattice LED die.

28. The-device of claim 16, further comprising an insulating layer disposed between a portion of at least one of the first and second conductive pads and the surface layer of the semiconductor die.

29. A device, comprising:

a rectangular light emitting diode (LED) having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the rectangular LED;

a second conductive pad disposed along the second side of the surface layer of the rectangular LED;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the rectangular LED, wherein the rectangular LED is a photonic lattice light emitting diode; and

an insulating layer disposed between an interior portion of one of the plurality of conductive contacts and the surface layer of the rectangular LED.

30. The device of claim 29, wherein the rectangular LED has a third side and a fourth side and the first and second sides are longer than the third and fourth sides.

31. The device of claim 30, wherein the plurality of conductive contacts extend parallel to the third side and the fourth side.

32. The device of claim 29, wherein during use heat dissipation is substantially the same across the rectangular LED.

33. The device of claim 29, wherein during use power dissipation is substantially the same across the rectangular LED.

34. The device of claim 29, wherein an aspect ratio of the surface layer of the rectangular LED is 4×

3.

35. The-device of claim 29, wherein an aspect ratio of the surface layer of the rectangular LED is 16×

9.

36. The device of claim 29, further comprising an insulating layer disposed between a portion of at least one of the first and second conductive pads and the surface layer of the rectangular LED.

37. A device comprising:

a stack of materials having a surface; and

a contact structure disposed on the surface of the stack of materials, the contact structure comprising;

a patterned conductive layer; and

a patterned insulating layer disposed between the patterned conductive layer and the surface of the stack of materials, wherein the patterned conductive layer and the patterned insulating layer are configured such that during use a voltage drop across the patterned conductive layer is about the same at a plurality of segments disposed along the length of the patterned conductive layer, wherein the voltage drop across the conductive layer has a uniformity within 10% at the plurality of segments disposed along the length of the patterned conductive layer.

38. The device of claim 37, wherein the device is a light emitting diode.

39. A device, comprising:

a material body designed for use in an electronic device, the material body having a surface; and

a contact structure supported by the surface of the material body, the contact structure comprising;

a patterned conductive layer having an interior portion; and

a patterned insulating layer having edges and being disposed between the interior portion of the patterned conductive layer and the surface of the material body, the insulating layer being patterned such that the conductive layer extends past all edges of the insulating layer to form an electrical contact to the material body, wherein the patterned insulating layer is tapered in shape.

40. The device of claim 39, wherein the device is a light emitting diode.

41. A device, comprising:

a material body designed for use in an electronic device, the material body having a surface; and

a contact structure supported by the surface of the material body, the contact structure comprising;

a patterned conductive layer having an interior portion; and

a patterned insulating layer having edges and being disposed between the interior portion of the patterned conductive layer and the surface of the material body, the insulating layer being patterned such that the conductive layer extends past all edges of the insulating layer to form an electrical contact to the material body, wherein the patterned insulating layer is substantially triangular in shape.

42. The device of claim 41, wherein the device is a light emitting diode.

43. A device, comprising:

a material body designed for use in an electronic device, the material body having a surface; and

a contact structure supported by the surface of the material body, the contact structure comprising;

a patterned conductive layer having an interior portion; and

a patterned insulating layer having edges and being disposed between the interior portion of the patterned conductive layer and the surface of the material body, the insulating layer being patterned such that the conductive layer extends past all edges of the insulating layer to form an electrical contact to the material body, wherein the patterned conductive layer is tapered in shape.

44. The device of claim 43, wherein the device is a light emitting diode.

45. A device, comprising:

a material body designed for use in an electronic device, the material body having a surface; and

a contact structure supported by the surface of the material body, the contact structure comprising;

a patterned conductive layer having an interior portion; and

a patterned insulating layer having edges and being disposed between the interior portion of the patterned conductive layer and the surface of the material body, the insulating layer being patterned such that the conductive layer extends past all edges of the insulating layer to form an electrical contact to the material body, wherein the patterned conductive layer is substantially triangular in shape.

46. The device of claim 45, wherein the device is a light emitting diode.

47. The device of claim 45, wherein the patterned insulating layer has a smaller area than the patterned conductive layer.

48. The device of claim 45, wherein a length of the patterned insulating layer is about the same as a length of the patterned conductive layer.

49. A device, comprising:

a material body designed for use in an electronic device, the material body having a surface; and

a contact structure supported by the surface of the material body, the contact structure comprising;

a patterned conductive layer having an interior portion; and

a patterned insulating layer having edges and being disposed between the interior portion of the patterned conductive layer and the surface of the material body, the insulating layer being patterned such that the conductive layer extends past all edges of the insulating layer to form an electrical contact to the material body, wherein the patterned conductive layer includes;

at least one pad; and

at least one contact,

wherein the patterned insulating layer is disposed between the at least one contact and the surface of the material body, and

wherein the patterned insulating layer is larger at an end adjacent to the pad.

50. The device of claim 49, wherein the device is a light emitting diode.

51. A device, comprising:

a material body designed for use in an electronic device, the material body having a surface; and

a contact structure supported by the surface of the material body, the contact structure comprising;

a patterned conductive layer having an interior portion; and

a patterned insulating layer having edges and being disposed between the interior portion of the patterned conductive layer and the surface of the material body, the insulating layer being patterned such that the conductive layer extends past all edges of the insulating layer to form an electrical contact to the material body, wherein an aspect ratio of the surface of the material body is 4×

3.

52. The device of claim 51, wherein the device is a light emitting diode.

53. A device, comprising:

a material body designed for use in an electronic device, the material body having a surface; and

a contact structure supported by the surface of the material body, the contact structure comprising;

a patterned conductive layer having an interior portion; and

a patterned insulating layer having edges and being disposed between the interior portion of the patterned conductive layer and the surface of the material body, the insulating layer being patterned such that the conductive layer extends past all edges of the insulating layer to form an electrical contact to the material body, wherein an aspect ratio of the surface of the material body is 16×

9.

54. The device of claim 53, wherein the device is a light emitting diode.

55. A device, comprising:

a semiconductor die having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the semiconductor die;

a second conductive pad disposed along the second side of the surface layer of the semiconductor die;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the semiconductor die; and

an insulating layer disposed between an interior portion of at least some of the plurality of conductive contacts and the top layer of the semiconductor die;

wherein;

the insulating layer is patterned such that a first portion of one of the plurality of conductive contacts is supported by the insulating layer and a second portion of one of the plurality of conductive contacts is supported by a top layer of the semiconductor die such that the second portion of one of the plurality of conductive contacts is in electrical contact with the surface layer of the semiconductor die;

the insulating layer extends from at least one of the first and second pads toward the central area of the semiconductor die; and

the insulating layer is larger at a first end that extends from at least one of the first and second pads than at a second end near the central area of the semiconductor die.

56. A device, comprising:

a semiconductor die having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the semiconductor die;

a second conductive pad disposed along the second side of the surface layer of the semiconductor die;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the semiconductor die; and

an insulating layer disposed between an interior portion of at least some of the plurality of conductive contacts and the top layer of the semiconductor die, wherein the plurality of conductive contacts are tapered in shape such that a portion of at least one of the plurality of contacts near the at least one of the first and second pads is larger than a portion of the contact near the central area of the semiconductor die.

57. A device, comprising:

a semiconductor die having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the semiconductor die;

a second conductive pad disposed along the second side of the surface layer of the semiconductor die;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the semiconductor die; and

an insulating layer disposed between an interior portion of at least some of the plurality of conductive contacts and the top layer of the semiconductor die, wherein each of the plurality of conductive contacts are connected at a first end to the first conductive pad and at a second end to the second conductive pad.

58. A device, comprising:

a semiconductor die having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the semiconductor die;

a second conductive pad disposed along the second side of the surface layer of the semiconductor die;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the semiconductor die; and

an insulating layer disposed between an interior portion of at least some of the plurality of conductive contacts and the top layer of the semiconductor die, wherein an aspect ratio of the surface layer of the semiconductor die is 4×

3.

59. A device, comprising:

a semiconductor die having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the semiconductor die;

a second conductive pad disposed along the second side of the surface layer of the semiconductor die;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the semiconductor die; and

an insulating layer disposed between an interior portion of at least some of the plurality of conductive contacts and the top layer of the semiconductor die, wherein the aspect ratio of the surface layer of the semiconductor die is 16×

9.

60. A device, comprising:

a semiconductor die having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the semiconductor die;

a second conductive pad disposed along the second side of the surface layer of the semiconductor die;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the semiconductor die; and

an insulating layer disposed between an interior portion of at least some of the plurality of conductive contacts and the top layer of the semiconductor die, wherein;

the semiconductor die is a light emitting diode (LED) die; and

the LED die is a photonic lattice LED die.

61. A device, comprising:

a semiconductor die having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the semiconductor die;

a second conductive pad disposed along the second side of the surface layer of the semiconductor die;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the semiconductor die; and

an insulating layer disposed between an interior portion of at least some of the plurality of conductive contacts and the top layer of the semiconductor die, wherein the semiconductor die is a surface-emitting laser.

62. A device, comprising:

a rectangular light emitting diode (LED) having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the rectangular LED;

a second conductive pad disposed along the second side of the surface layer of the rectangular LED; and

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the rectangular LED, wherein an aspect ratio of the surface layer of the rectangular LED is 4×

3.

63. A device, comprising:

a rectangular light emitting diode (LED) having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the rectangular LED;

a second conductive pad disposed along the second side of the surface layer of the rectangular LED; and

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the rectangular LED, wherein an aspect ratio of the surface layer of the rectangular LED is 16×

9.

64. A device, comprising:

a rectangular light emitting diode (LED) having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the rectangular LED;

a second conductive pad disposed along the second side of the surface layer of the rectangular LED;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the rectangular LED; and

an insulating layer disposed between an interior portion of one of the plurality of conductive contacts and the surface layer of the rectangular LED.

65. A device, comprising:

a rectangular light emitting diode (LED) having a surface layer with a first side and a second side, the first side being opposite the second side;

a first conductive pad disposed along the first side of the surface layer of the rectangular LED;

a second conductive pad disposed along the second side of the surface layer of the rectangular LED;

a plurality of conductive contacts in electrical contact with at least one of the first and second conductive pads and extending from at least one of the first and second conductive pads toward a central area of the rectangular LED; and

an insulating layer disposed between a portion of at least one of the first and second conductive pads and the surface layer of the rectangular LED.