Epitaxial SiOxbarrier/insulation layer

• US 7,105,895 B2
• Filed: 06/14/2001
• Issued: 09/12/2006
• Est. Priority Date: 11/10/1997
• Status: Expired due to Fees

• Current Assignee: Nanodynamics, Inc.
• Original Assignee: Nanodynamics, Inc.
• Inventors: Wang, Chia-Gee, Tsu, Raphael, Lofgren, John Clay
• Primary Examiner(s): Pert, Evan
• Assistant Examiner(s): MANDALA, VICTOR A
• Application Number:
  US10/480,403
• Publication Number:
  US 20060003500A1
• Time in Patent Office: 1,916 Days
• Field of Search: 257/347, 257/646, 257/649, 438/149, 438/787, 438/479, 438/478, 438/413, 438/404
• US Class Current: 257/347
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/76248 using lateral overgrowth techniques, i.e. ELO techniques
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for producing an insulating or barrier layer (FIG. 1B), useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on a silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer. Alternatively, a monolayer of one or more elements, preferably comprising oxygen, is absorbed on a silicon substrate. A plurality of insulating layers sandwiched between epitaxial silicon forms a barrier composite. Semiconductor devices are disclosed which comprise said barrier composite.

Claims

1. A barrier composite useful for semiconductor devices, comprising an insulating layer of silicon and at least one additional element deposited on a silicon substrate whereby said insulating layer is substantially free of defects, and having a deposit of epitaxial silicon substantially free of defects deposited on said insulating layer, wherein said insulating layer comprises SiOx wherein O<

x<

2.0 and the surface of said silicon substrate is epitaxial.

2. A barrier composite according to claim 1, wherein said insulating layer comprises at least a second additional element selected from the group consisting of carbon, nitrogen, phosphorus, sulfur, hydrogen, antimony and arsenic, and combinations thereof.

3. A barrier composite according to claim 1, wherein said insulating layer is essentially epitaxial.

4. A barrier composite according to claim 1, comprising a plurality of insulating layers forming a barrier comprising a plurality of insulating layers sandwiched between epitaxial silicon.

5. A barrier composite according to claim 4, wherein said additional elements comprise oxygen and at least one other of said additional elements.

6. A semiconductor device comprising a barrier composite, said barrier composite comprising an insulating layer of silicon and at least one additional element deposited on a silicon substrate whereby said insulating layer is substantially free of defects, and said composite having a deposit of epitaxial silicon substantially free of defects deposited on said insulating layer, wherein said insulating layer comprises SiOx wherein O<

x<

2.0 and the surface of said silicon substrate is epitaxial.

7. A semiconductor device according to claim 6, wherein said insulating layer comprises at least a second additional element selected from the group consisting of carbon, nitrogen, phosphorus, sulfur, hydrogen, antimony and arsenic, and combinations thereof.

8. A semiconductor device according to claim 6, wherein said insulating layer is essentially epitaxial.

9. A semiconductor device according to claim 6, comprising a plurality of insulating layers forming a barrier comprising a plurality of insulating layers sandwiched between epitaxial silicon.

10. A semiconductor device according to claim 9, wherein said additional elements comprise oxygen and at least one other of said additional elements.

11. A semiconductor device according to claim 6, wherein said semiconductor device comprises a structure selected from the group comprising resonant tunneling devices, single electron field effect transistors, quantum well devices, metal oxide semiconductor field effect transistors and integrated circuit devices.

12. A method for producing an insulating or barrier layer, useful for semiconductor devices, on a silicon substrate, which comprises absorbing on said silicon substrate one or more elements to form a monolayer of said element or elements, onto which is grown epitaxial silicon, wherein said insulating layer comprises SiOx wherein O <

x<

2.0 and the surface of said silicon substrate is epitaxial.

13. A method according to claim 12, wherein said elements comprise oxygen and at least a second additional element selected from the group consisting of carbon, nitrogen, phosphorus, antimony and arsenic, and combinations thereof.

14. A method according to claim 13, wherein a plurality of insulating layers are deposited to form a barrier comprising a plurality of insulating layers sandwiched between epitaxial silicon.

15. A semiconductor device comprising a barrier as defined in claim 14.

16. A semiconductor device according to claim 15, wherein said semiconductor device comprises a structure selected from the group comprising resonant tunneling devices, single electron field effect transistors, quantum well devices, metal oxide semiconductor field effect transistors and integrated circuit devices.