Thin film transistor, TFT substrate and liquid crystal display unit
First Claim
Patent Images
1. A thin film transistor comprising:
- an active layer, in which a source region and drain region are formed;
a first light-shielding film shielding a light incident on said active layer; and
a second light-shielding film disposed between said active layer and said first light-shielding film,wherein a carrier concentration of at least a surface portion of said second light-shielding film which opposes said active layer is about 1017/cm3 or less.
4 Assignments
0 Petitions
Accused Products
Abstract
A thin film transistor is provided including an active layer, in which a source region and drain region are formed, a first light-shielding film shielding a light incident on the active layer, and a second light-shielding film between the active layer and the first shielding film. A carrier concentration of at least surface portion of the second light-shielding film which opposes the active layer is about 1017/cm3 or less.
9 Citations
17 Claims
-
1. A thin film transistor comprising:
-
an active layer, in which a source region and drain region are formed; a first light-shielding film shielding a light incident on said active layer; and a second light-shielding film disposed between said active layer and said first light-shielding film, wherein a carrier concentration of at least a surface portion of said second light-shielding film which opposes said active layer is about 1017/cm3 or less. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A thin film transistor comprising:
-
an active layer, in which a source region and drain region are formed; a first light-shielding film shielding a light incident on said active layer; and a second light-shielding film disposed between said active layer and said first light-shielding film, wherein an electric field intensity of a surface portion of said second light-shielding film which opposes said active layer includes about 80% or less of that of a surface portion of said second light-shielding film which opposes said first light-shielding film. - View Dependent Claims (8)
-
-
9. A thin film transistor comprising:
-
an active layer, in which a source region and drain region are formed; a first light-shielding film shielding a light incident on said active layer; and a second light-shielding film disposed between said active layer and said first light-shielding film, wherein said second light-shielding film is made of a semi-insulating film, and wherein a carrier concentration of said second light-shielding film is about 1017/cm3 or less.
-
-
10. A thin film transistor comprising:
-
an active layer, in which a source region and drain region are formed; a first light-shielding film shielding a light incident on said active layer; a second light-shielding film disposed between said active layer and said first light-shielding film, wherein said second light-shielding film is made of a material selected from a group consisting of amorphous silicon, crystallite silicon, amorphous Silicon Germanium, poly germanium, amorphous germanium, poly Silicon Germanium, and any combination thereof, and wherein a carrier concentration of said second light-shielding film is about 1017/cm3 or less.
-
-
11. A thin film transistor substrate comprising:
-
a light transmission substrate; a transistor array including a plurality of thin film transistors disposed on said light transmission substrate; a first light-shielding film disposed between said light transmission substrate and at least one of said thin film transistors; a second light-shielding film disposed between said first light-shielding film and an active layer of said thin film transistor, wherein a carrier concentration of a surface portion of said second light-shielding film which opposes said active layer is about 1017/cm3 or less. - View Dependent Claims (12, 13, 14, 15, 16, 17)
-
Specification