Magnetic element utilizing spin transfer and an mram device using the magnetic element
First Claim
1. A magnetic element comprising:
- a first pinned layer, the pinned layer being ferromagnetic and including a first magnetization, the first magnetization being pinned in a first direction;
a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive;
a free layer, the nonmagnetic spacer layer residing between the first pinned layer and the free layer, the free layer being synthetic and including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic conductive layer between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer having a second magnetization, the second ferromagnetic layer having a third magnetization;
a barrier layer, the barrier layer being an insulator and having a thickness that allows electron tunneling through the barrier layer;
a second pinned layer, the second pinned layer being ferromagnetic and including a fourth magnetization pinned in a second direction substantially the same as the first direction, the barrier layer being between the free layer and the second pinned layer;
wherein the magnetic element is configured to allow at least one of the second magnetization and the third magnetization of the free layer to change direction due to spin transfer switching when a write current is passed through the magnetic element in current-perpendicular-to-the-plane mode.
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Abstract
A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction, due to spin transfer when a write current is passed through the magnetic element.
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Citations
19 Claims
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1. A magnetic element comprising:
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a first pinned layer, the pinned layer being ferromagnetic and including a first magnetization, the first magnetization being pinned in a first direction; a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive; a free layer, the nonmagnetic spacer layer residing between the first pinned layer and the free layer, the free layer being synthetic and including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic conductive layer between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer having a second magnetization, the second ferromagnetic layer having a third magnetization; a barrier layer, the barrier layer being an insulator and having a thickness that allows electron tunneling through the barrier layer; a second pinned layer, the second pinned layer being ferromagnetic and including a fourth magnetization pinned in a second direction substantially the same as the first direction, the barrier layer being between the free layer and the second pinned layer; wherein the magnetic element is configured to allow at least one of the second magnetization and the third magnetization of the free layer to change direction due to spin transfer switching when a write current is passed through the magnetic element in current-perpendicular-to-the-plane mode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A magnetic element comprising:
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a pinned layer, the pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction; a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive; a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the free layer being synthetic and including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic conductive layer between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer having a second magnetization, the second ferromagnetic layer having a third magnetization; wherein the magnetic element is configured to allow at least one of the second magnetization and the third magnetization of the free layer to change direction due to spin transfer switching when a write current is passed through the magnetic element in current-perpendicular-to-the-plane mode.
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17. A magnetic element comprising:
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a pinned layer, the pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction; a nonmagnetic spacer layer, the nonmagnetic spacer layer being an insulating barrier layer; a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the free layer being synthetic and including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic conductive layer between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer having a second magnetization, the second ferromagnetic layer having a third magnetization; wherein the magnetic element is configured to allow at least one of the second magnetization and the third magnetization of the free layer to change direction due to spin transfer switching when a write current is passed through the magnetic element in current-perpendicular-to-the-plan mode; and wherein the magnetic element is configured to have a low resistance-area product, Ra. - View Dependent Claims (18, 19)
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Specification