Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus
First Claim
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1. A method of cleaning a ruthenium-containing deposit from a ruthenium-deposition apparatus, comprising processes of:
- providing carbon monoxide (CO) gas in at least a portion of said ruthenium-deposition apparatus during cleaning; and
during cleaning, maintaining at least said portion substantially free of an activated oxygen species and an oxygen-atom donating gas.
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Abstract
Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.
75 Citations
27 Claims
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1. A method of cleaning a ruthenium-containing deposit from a ruthenium-deposition apparatus, comprising processes of:
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providing carbon monoxide (CO) gas in at least a portion of said ruthenium-deposition apparatus during cleaning; and during cleaning, maintaining at least said portion substantially free of an activated oxygen species and an oxygen-atom donating gas. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of cleaning a ruthenium-containing deposit from a ruthenium-deposition apparatus, comprising processes of:
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providing carbon monoxide gas in at least a portion of said ruthenium-deposition apparatus; and avoiding formation of RuO4. - View Dependent Claims (9, 10, 11, 12)
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13. A method of inhibiting formation of a ruthenium-containing deposit on an apparatus surface of a ruthenium-deposition apparatus during deposition of a ruthenium-containing film on a wafer substrate, comprising:
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providing a ruthenium-containing precursor gas proximate to a wafer substrate surface in a ruthenium-deposition apparatus to deposit a ruthenium-containing film on said wafer substrate surface; and providing carbon monoxide (CO) gas proximate to an apparatus surface of said ruthenium-deposition apparatus during said providing said ruthenium-containing precursor gas proximate to said wafer substrate surface. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification