Semiconductor light emitting device and fabrication method thereof
First Claim
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1. A fabrication method of a semiconductor light emitting device comprising:
- providing a substrate;
forming an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on the substrate;
forming a first transparent electrode on the p-type semiconductor layer, said first transparent electrode having holes per a certain region to thereby expose the p-type semiconductor layer;
forming a first pad on the first transparent electrode; and
forming a second transparent electrode on the first transparent electrode.
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Abstract
A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.
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Citations
28 Claims
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1. A fabrication method of a semiconductor light emitting device comprising:
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providing a substrate; forming an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on the substrate; forming a first transparent electrode on the p-type semiconductor layer, said first transparent electrode having holes per a certain region to thereby expose the p-type semiconductor layer; forming a first pad on the first transparent electrode; and forming a second transparent electrode on the first transparent electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A fabrication method of a semiconductor light emitting device comprising:
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providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; forming a first pad on the first transparent electrode; and forming a second transparent electrode on the first transparent electrode, wherein the forming a first transparent electrode comprises; forming a first metal layer by depositing a metal group that at least one metal oxide generating metal and at least one current spreading metal are mixed on the p-type semiconductor layer; and annealing the first metal layer. - View Dependent Claims (14)
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15. A fabrication method of a semiconductor light emitting device comprising:
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providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a second transparent electrode on the first transparent electrode, wherein the second transparent electrode comprises a metal oxide. - View Dependent Claims (16)
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17. A fabrication method of a semiconductor light emitting device comprising:
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providing a substrate; forming an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on the substrate; depositing a metal group that at least one metal oxide generating metal and at least one current spreading metal are mixed on the p-type semiconductor layer, and thereby forming a first transparent electrode; forming a first pad on the p-type semiconductor layer; forming holes that expose the p-type semiconductor layer per a certain region on the first transparent electrode; and forming a second transparent electrode on the first transparent electrode. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A fabrication method of a semiconductor light emitting device comprising:
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providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; depositing a metal group that at least one metal oxide generating metal and at least one current spreading metal are mixed on the p-type semiconductor layer, and thereby forming a first transparent electrode; forming a first pad on the p-type semiconductor layer; and forming a second transparent electrode on the first transparent electrode. - View Dependent Claims (28)
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Specification