Method of manufacturing a semiconductor device
First Claim
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1. A method of manufacturing a portable information terminal having a display device comprising:
- forming a first semiconductor film having an amorphous structure over an insulating surface;
providing the first semiconductor film with a material comprising a metal element;
crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material;
forming a barrier layer containing a silicon oxynitride film on the crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas;
forming a second semiconductor film containing a noble gas element on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
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Abstract
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
48 Citations
70 Claims
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1. A method of manufacturing a portable information terminal having a display device comprising:
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forming a first semiconductor film having an amorphous structure over an insulating surface; providing the first semiconductor film with a material comprising a metal element; crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material; forming a barrier layer containing a silicon oxynitride film on the crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; forming a second semiconductor film containing a noble gas element on the barrier layer; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (2, 3, 8, 11, 14, 17, 23, 26, 29, 32, 35, 62)
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4. A method of manufacturing a portable information terminal having a display device comprising:
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forming a first semiconductor film having an amorphous structure over an insulating surface; providing the first semiconductor film with a material comprising a metal element; crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material; forming a barrier layer containing a silicon oxynitride film on the crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; forming a second semiconductor film on the barrier layer, the second semiconductor film containing a noble gas element with a concentration gradient set higher toward the film surface; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (6, 9, 12, 15, 18, 24, 27, 30, 33, 36, 63)
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5. A method of manufacturing a portable information terminal having a display device comprising:
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forming a first semiconductor film having an amorphous structure over an insulating surface; providing the first semiconductor film with a material comprising a metal element; crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material; forming a barrier layer containing a silicon oxynitride film on the crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; forming a second semiconductor film on the barrier layer, the second semiconductor film containing a noble gas element; forming a third semiconductor film on the second semiconductor film, the third semiconductor film containing a noble gas element in a concentration higher than the noble gas element concentration in the second semiconductor film; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film and the third semiconductor film; and removing the barrier layer. - View Dependent Claims (7, 10, 13, 16, 19, 20, 21, 22, 25, 28, 31, 34, 37, 64)
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38. A method of manufacturing a portable information terminal having a display device comprising:
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forming a first semiconductor film having an amorphous structure over an insulating surface; providing the first semiconductor film with a material comprising a metal element; crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material; forming a barrier layer containing a silicon oxynitride film on the crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; forming a second semiconductor film containing a noble gas element on the barrier layer; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer, wherein the barrier layer and the second semiconductor film are formed successively without exposing the substrate to the air. - View Dependent Claims (39, 40, 41, 65)
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42. A method of manufacturing a portable information terminal having a display device comprising:
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forming a first semiconductor film having an amorphous structure over an insulating surface; providing the first semiconductor film with a material comprising a metal element; crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material; forming a barrier layer containing a silicon oxynitride film on the crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; exposing a surface of the barrier layer to a plasma including a noble gas element; forming a second semiconductor film containing a noble gas element on the barrier layer; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (43, 44, 45, 66)
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46. A method of manufacturing a portable information terminal having a display device comprising:
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forming a first semiconductor film having an amorphous structure over an insulating surface; providing the first semiconductor film with a material comprising a metal element; crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material; exposing a surface of the crystallized first semiconductor film to plasma including a noble gas element; forming a barrier layer containing a silicon oxynitride film on the crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; forming a second semiconductor film containing a noble gas element on the barrier layer; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (47, 48, 49, 67)
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50. A method of manufacturing a portable information terminal having a display device comprising:
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forming a barrier layer containing a silicon oxynitride film on a crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; forming a second semiconductor film containing a noble gas element on the barrier layer; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (53, 56, 59, 68)
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51. A method of manufacturing a portable information terminal having a display device comprising:
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forming a barrier layer containing a silicon oxynitride film on a crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; forming a second semiconductor film on the barrier layer, the second semiconductor film containing a noble gas element with a concentration gradient set higher toward the film surface; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film; and removing the barrier layer. - View Dependent Claims (54, 57, 60, 69)
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52. A method of manufacturing a portable information terminal having a display device comprising:
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forming a barrier layer containing a silicon oxynitride film on a crystallized first semiconductor film by plasma CVD using a reactive gas comprising silane-based gas and nitrogen oxide-based gas; forming a second semiconductor film on the barrier layer, the second semiconductor film containing a noble gas element; forming a third semiconductor film on the second semiconductor film, the third semiconductor film containing a noble gas element in a concentration higher than the noble gas element concentration in the second semiconductor film; removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film; removing the second semiconductor film and the third semiconductor film; and removing the barrier layer. - View Dependent Claims (55, 58, 61, 70)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsSuzuki, Noriyoshi, Asami, Taketomi, Ichijo, Mitsuhiro
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Primary Examiner(s)Chaudhari, Chandra
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Application NumberUS10/967,278Publication NumberTime in Patent Office700 DaysField of Search438/162, 438/166US Class Current438/162CPC Class CodesH01L 21/0237 MaterialsH01L 21/02422 Non-crystalline insulating ...H01L 21/02488 Insulating materialsH01L 21/02532 Silicon, silicon germanium,...H01L 21/02592 amorphousH01L 21/0262 Reduction or decomposition ...H01L 21/02672 using crystallisation enhan...H01L 21/02686 Pulsed laser beamH01L 21/3221 of silicon bodies, e.g. for...H01L 21/3223 using cavities formed by hy...H01L 27/1277 using a crystallisation pro...
