Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
First Claim
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1. A method of forming semiconductor junctions in a semiconductor material of a workpiece, comprising:
- ion implanting dopant impurities in selected regions of said semiconductor material;
introducing an optical absorber material precursor gas into a chamber containing the workpiece;
generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying said workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on said workpiece;
optically annealing said workpiece so as to activate dopant impurities in said semiconductor material;
applying bias power or voltage to the workpiece;
wherein said optical absorber material comprises amorphous carbon and said precursor gas comprises a carbon-containing gas;
including an absorption-enhancing species in the optical absorbing layer by adding an optical absorption enhancing species precursor gas to the optical absorber material precursor gas during deposition of the optical absorber material; and
changing the proportion of the optical absorption-enhancing precursor gas in the chamber over time to vary the absorption characteristic over the depth of the optical absorber layer.
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Abstract
A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.
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15 Claims
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1. A method of forming semiconductor junctions in a semiconductor material of a workpiece, comprising:
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ion implanting dopant impurities in selected regions of said semiconductor material; introducing an optical absorber material precursor gas into a chamber containing the workpiece; generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying said workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on said workpiece; optically annealing said workpiece so as to activate dopant impurities in said semiconductor material; applying bias power or voltage to the workpiece; wherein said optical absorber material comprises amorphous carbon and said precursor gas comprises a carbon-containing gas; including an absorption-enhancing species in the optical absorbing layer by adding an optical absorption enhancing species precursor gas to the optical absorber material precursor gas during deposition of the optical absorber material; and changing the proportion of the optical absorption-enhancing precursor gas in the chamber over time to vary the absorption characteristic over the depth of the optical absorber layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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