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Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing

  • US 7,109,098 B1
  • Filed: 05/17/2005
  • Issued: 09/19/2006
  • Est. Priority Date: 05/17/2005
  • Status: Expired due to Fees
First Claim
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1. A method of forming semiconductor junctions in a semiconductor material of a workpiece, comprising:

  • ion implanting dopant impurities in selected regions of said semiconductor material;

    introducing an optical absorber material precursor gas into a chamber containing the workpiece;

    generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying said workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on said workpiece;

    optically annealing said workpiece so as to activate dopant impurities in said semiconductor material;

    applying bias power or voltage to the workpiece;

    wherein said optical absorber material comprises amorphous carbon and said precursor gas comprises a carbon-containing gas;

    including an absorption-enhancing species in the optical absorbing layer by adding an optical absorption enhancing species precursor gas to the optical absorber material precursor gas during deposition of the optical absorber material; and

    changing the proportion of the optical absorption-enhancing precursor gas in the chamber over time to vary the absorption characteristic over the depth of the optical absorber layer.

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