Method for manufacturing semiconductor device having metal silicide
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
crystallizing the semiconductor film by irradiating a laser light;
forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane;
forming a gate electrode in contact with the gate insulating film;
forming a metal layer in contact with a portion of the crystalline semiconductor film; and
forming a metal silicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by irradiating a laser light.
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Accused Products
Abstract
A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.
A high performance TFT can be realized. The metal silicide layer achieves favorable contact with the source and the drain, and, since it has a lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.
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Citations
30 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating a laser light; forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the crystalline semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by irradiating a laser light. - View Dependent Claims (2, 3, 4, 13)
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5. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating a laser light; forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the crystalline semiconductor film; and forming a metal suicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by irradiating an infrared light. - View Dependent Claims (6, 7, 8, 14)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating a laser light; forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the crystalline semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by heating. - View Dependent Claims (10, 11, 12, 15)
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16. A method for manufacturing a semiconductor device comprising the steps of:
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forming a silicon oxide film in contact with a semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the semiconductor film by irradiating a laser light. - View Dependent Claims (17, 18, 19, 20)
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21. A method for manufacturing a semiconductor device comprising the steps of:
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forming a silicon oxide film in contact with a semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the semiconductor film by irradiating an infrared light. - View Dependent Claims (22, 23, 24, 25)
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26. A method for manufacturing a semiconductor device comprising the steps of:
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forming a silicon oxide film in contact with a semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the semiconductor film by heating. - View Dependent Claims (27, 28, 29, 30)
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Specification