Electron spin mechanisms for inducing magnetic-polarization reversal

• US 7,112,354 B2
• Filed: 02/03/2005
• Issued: 09/26/2006
• Est. Priority Date: 11/19/2003
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Hannah, Eric C., Brown, Michael A.
• Primary Examiner(s): Nguyen, Viet Q.
• Application Number:
  US11/051,311
• Publication Number:
  US 20050135151A1
• Time in Patent Office: 600 Days
• Field of Search: 365/173, 365/171, 365/158, 365/97, 365/66, 365/48, 427/502, 427/548, 427/551, 427/571, 427/599, 427/128
• US Class Current: 427/599
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect

Abstract

An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-parallel to the LMC layer are injected via the energy-gap, to change the M-ESP of the LMC layer. A non-magnetic material is in electrical communication with the LMC layer and provides a spin-balanced source of current to the LMC layer, responsive to the injection of spin-polarized electrons into the LMC layer.

Claims

1. A method comprising:

polarizing a high magnetic-coercivity layer of material (HMC layer) with a first majority electron-spin-polarization (M-ESP);

depositing an energy-gap layer on the HMC layer; and

depositing a low magnetic-coercivity layer of material (LMC layer) on the energy-gap layer.

2. The method of claim 1, wherein said energy-gap is a tunnel junction layer of material (TJ layer).

3. The method of claim 2, wherein said TJ layer is aluminum oxide.

4. The method of claim 1, wherein said energy-gap is a normal conductor disposed between a first magnetic mirror and a second magnetic mirror.

5. The method of claim 1, further comprising depositing a non-magnetic material in electrical communication with said LMC layer.

6. The method of claim 1, wherein said HMC layer is alnico.

7. The method of claim 1, wherein said LMC layer is permaloy.

8. The method of claim 1, further comprising depositing a magnetic-mirror layer of material (MM).

9. The method of claim 8, wherein said MM is a half-metallic.

10. The method of claim 9, wherein said half-metallic is aluminum oxide.

11. The method of claim 8, further comprising:

depositing an isolation barrier layer of material (IB layer); and

depositing a highly polarized magnetic layer of material coupled with said IB layer.

12. The method of claim 8, wherein said HMC layer is alnico.

13. The method of claim 8, further comprising depositing an anti-ferromagnetic layer of material.

14. An apparatus, comprising:

a polarized high magnetic-coercivity layer of material (HMC layer) with a first majority electron-spin-polarization (M-ESP);

a low magnetic-coercivity layer of material (LMC layer); and

an energy-gap layer positioned between the HMC layer and the LMC layer.

15. The apparatus of claim 14, wherein said energy-gap is a tunnel junction layer of material (TJ layer).

16. The apparatus of claim 15, wherein said TJ layer is aluminum oxide.

17. The apparatus of claim 14, wherein said energy-gap is a normal conductor disposed between a first magnetic mirror and a second magnetic mirror.

18. The apparatus of claim 14, further comprising a non-magnetic material in electrical communication with said LMC layer.

19. The apparatus of claim 14, further comprising a magnetic-mirror layer of material (MM) positioned between the HMC layer and the LMC layer.

20. The apparatus of claim 19, further comprising:

an isolation barrier layer of material (IB layer); and

a highly polarized magnetic layer of material coupled with said IB layer.

21. The apparatus of claim 19, further comprising an anti-ferromagnetic layer of material.

22. A system, comprising:

a processor; and

a magnetic random access memory (MRAM) coupled with the processor, the MRAM comprising;

a polarized high magnetic-coercivity layer of material (HMC layer) with a first majority electron-spin-polarization (M-ESP);

a low magnetic-coercivity layer of material (LMC layer); and

an energy-gap layer positioned between the HMC layer and the LMC layer.

23. The system of claim 22, further comprising:

an MRAM controller coupled with the processor and the MRAM, wherein the MRAM controller is configured to store data in the MRAM and to read data from the MRAM.

24. The system of claim 23, further comprising:

a system bus coupled with the processor; and

a display coupled with the system bus.

25. The system of claim 22, wherein said energy-gap is a tunnel junction layer of material (TJ layer).

26. The system of claim 25, wherein said TJ layer is aluminum oxide.

27. The system of claim 22, wherein said energy-gap is a normal conductor disposed between a first magnetic mirror and a second magnetic mirror.

28. The system of claim 22, further comprising a non-magnetic material in electrical communication with said LMC layer.

29. The system of claim 22, further comprising a magnetic-mirror layer of material (MM) positioned between the HMC layer and the LMC layer.

30. The system of claim 29, further comprising:

an isolation barrier layer of material (IB layer); and

a highly polarized magnetic layer of material coupled with said IB layer.

31. The system of claim 29, further comprising an anti-ferromagnetic layer of material.