Method of making a hybrid substrate having a thin silicon carbide membrane layer
First Claim
1. A method of making a hybrid substrate assembly comprising:
- implanting a preferential etching layer within a wafer to thereby form a membrane on a surface of the wafer, the preferential etching layer being located interiorly of at least first and second opposing surfaces of the wafer and the membrane being located between the preferential etching layer and the first surface of the wafer, having a different chemical composition than the preferential etching layer, and being more resistant to etching by a selected etchant than the preferential etching layer;
permanently attaching a substrate-of-choice to the membrane; and
etching the preferential etching layer with the selected etchant to separate the membrane from a remainder of the wafer and thereby provide a hybrid substrate assembly that includes the substrate-of-choice permanently attached to the membrane, wherein the wafer is less susceptible to the etchant than the preferential etching layer.
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Accused Products
Abstract
A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiOx) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide layer and on a surface of the silicon carbide wafer. Optionally, the silicon oxide layer is then thermally oxidized in the presence of steam or oxygen. A substrate-of-choice is then wafer bonded to the silicon carbide membrane, optionally in the presence of a wetting layer that is located intermediate the substrate-of-choice and the silicone carbide membrane, the wetting layer containing silicon. The silicon oxide layer is then removed by hydrofluoric acid etching, to thereby provide a hybrid semiconductor substrate assembly that includes the substrate-of-choice wafer bonded to the silicon carbide membrane. The hybrid semiconductor substrate assembly is then annealed. The method is repeated a plurality of times, to thereby provide a plurality of hybrid semiconductor substrate assemblies, each assembly including a substrate-of-choice wafer bonded to a silicon carbide membrane. Optionally, an annealing step may be provided after the silicon oxide layer is formed and prior to wafer bonding.
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Citations
20 Claims
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1. A method of making a hybrid substrate assembly comprising:
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implanting a preferential etching layer within a wafer to thereby form a membrane on a surface of the wafer, the preferential etching layer being located interiorly of at least first and second opposing surfaces of the wafer and the membrane being located between the preferential etching layer and the first surface of the wafer, having a different chemical composition than the preferential etching layer, and being more resistant to etching by a selected etchant than the preferential etching layer; permanently attaching a substrate-of-choice to the membrane; and etching the preferential etching layer with the selected etchant to separate the membrane from a remainder of the wafer and thereby provide a hybrid substrate assembly that includes the substrate-of-choice permanently attached to the membrane, wherein the wafer is less susceptible to the etchant than the preferential etching layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification