Super lattice modification of overlying transistor
First Claim
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1. A gallium nitride based heterojunction field effect transistor device comprising:
- a substrate;
a buffer region positioned upon said substrate, wherein said buffer region comprises an upper buffer region and a lower buffer region;
a heterojunction region positioned upon said buffer region wherein said heterojunction region comprises AlbGa1-bN; and
a superlattice positioned between said lower buffer region and said upper buffer region, wherein said superlattice comprises individual layers of GaN and AlxGa1-xN.
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Abstract
The invention provides a device having a substrate, a buffer region positioned upon the substrate, wherein the buffer region has an upper buffer region and a lower buffer region, a heterojunction region positioned upon the buffer region, and a superlattice positioned between the lower buffer region and the upper buffer region, wherein the device is configured to function as a heterojunction field effect transistor.
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Citations
30 Claims
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1. A gallium nitride based heterojunction field effect transistor device comprising:
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a substrate; a buffer region positioned upon said substrate, wherein said buffer region comprises an upper buffer region and a lower buffer region; a heterojunction region positioned upon said buffer region wherein said heterojunction region comprises AlbGa1-bN; and a superlattice positioned between said lower buffer region and said upper buffer region, wherein said superlattice comprises individual layers of GaN and AlxGa1-xN. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A gallium nitride based heterojunction field effect transistor device comprising:
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a substrate comprising sapphire; a buffer region positioned upon said substrate, wherein said buffer region comprises an upper buffer region and a lower buffer region; a heterojunction region positioned upon said buffer region wherein said heterojunction region comprises AlbGa1-bN; and a superlattice positioned between said lower buffer region and said upper buffer region, wherein said superlattice comprises individual layers of GaN and AlxGa1-xN. - View Dependent Claims (24, 25, 26, 27, 28, 29)
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30. A gallium nitride based heterojunction field effect transistor device comprising:
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a substrate; a buffer region positioned upon said substrate, wherein said buffer region comprises an upper buffer region and a lower buffer region; a heterojunction region positioned upon said buffer region, said heteroj unction region comprising a first layer and second layer, wherein said second layer is positioned above said upper buffer region, and said first layer is positioned above said second layer and wherein said first layer and said second layer both comprise AlyGa1-yN; and a superlattice positioned between said lower buffer region and said upper buffer region, wherein said superlattice comprises individual layers of GaN and AlxGa1-xN.
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Specification