Thin channel MOSFET with source/drain stressors

• US 7,112,848 B2
• Filed: 09/13/2004
• Issued: 09/26/2006
• Est. Priority Date: 09/13/2004
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lee, Wen-Chin
• Primary Examiner(s): Baumeister, B. William
• Assistant Examiner(s): Farahani, Dana
• Application Number:
  US10/939,923
• Publication Number:
  US 20060054968A1
• Time in Patent Office: 743 Days
• Field of Search: 257/288, 257/301, 257/302, 257/285, 257/355, 257/327, 257/347, 257/349, 257/353, 257/354, 257/66, 257/192, 438/164, 438/412, 349/42, 349/43
• US Class Current: 257/347
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/66636 with source or drain recessed by etching or first recessed by etching and then refilled
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/7842 means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate variation of the composition of the channel H01L29/1054
• CPC Class Codes: H01L 29/78639 with a drain or source connected to a bulk conducting substrate

Abstract

Methods of manufacturing microelectronic device including, in one embodiment, forming a gate electrode over a substrate having an insulating layer interposing a bulk semiconductor portion and a thin semiconductor layer, and removing at least a portion of the thin semiconductor and insulating layers, thereby defining a pedestal comprising a portion of the thin semiconductor and insulating layers. Source/drain stressors are then formed contacting the source/drain extensions on opposing sides of the pedestal and substantially spanning a height no less than the pedestal.

Claims

1. A microelectronic device, comprising:

a silicon-on-insulator substrate having an insulating layer interposing a bulk semiconductor portion and a thin semiconductor layer;

a pedestal having a first width defined from the thin semiconductor and insulating layers over the bulk semiconductor portion, wherein the portion of the pedestal defined from the thin semiconductor layer comprises a channel region interposing source/drain extensions;

a gate electrode having a second width and located over the pedestal, wherein the second width is different than the first width; and

source/drain stressors located over the bulk semiconductor portion and each contacting a corresponding one of the source/drain extensions, wherein at least one of the source/drain stressors is thicker than the channel region.

2. The device of claim 1 wherein the source/drain stressors comprises a semiconductor material having a different lattice constant from the channel region.

3. The device of claim 1 wherein at least one of the thin semiconductor layer and the source/drain stressors comprises a material selected from the group consisting of:

silicon;

silicon germanium;

silicon carbide; and

silicon germanium carbide.

4. The device of claim 1 wherein the thin semiconductor layer has a thickness of about 200 angstroms.

5. An integrated circuit device, comprising:

a plurality of microelectronic devices located at least partially in a substrate having an insulating layer interposing a bulk semiconductor portion and a thin semiconductor layer, wherein ones of the plurality of microelectronic devices comprise;

a pedestal having a first width defined from the thin semiconductor and insulating layers over the bulk semiconductor portion, wherein the portion of the pedestal defined from the thin semiconductor layer comprises a channel region interposing source/drain extensions;

a gate electrode having a second width and located over the pedestal, wherein the second width is different from the first width; and

source/drain stressors located over the bulk semiconductor portion and each contacting a corresponding one of the source/drain extensions, wherein at least one of the source/drain stressors is thicker than the channel region; and

a plurality of interconnects interconnecting ones of the plurality of microelectronic devices.

6. The device of claim 5 at least one of the thin semiconductor layer and the source/drain stressors comprises a semiconductor material having a different lattice constant than the channel region.

7. The device of claim 5 wherein the thin semiconductor layer comprises a material selected from the group consisting of:

silicon;

silicon germanium;

silicon carbide; and

silicon germanium carbide.

8. The device of claim 5 wherein the source/drain stressors of ones of the plurality of microelectronic devices comprise a material selected from the group consisting of:

silicon;

silicon germanium;

silicon carbide; and

silicon germanium carbide.

9. The device of claim 5 wherein the thin semiconductor layer has a thickness of about 200 angstroms.

10. A microelectronic device, comprising:

a silicon-on-insulator substrate having an insulating layer interposing a bulk semiconductor portion and a thin semiconductor layer;

a pedestal having a first width defined from the thin semiconductor layer and the insulating layer, wherein the portion of the pedestal defined from the thin semiconductor layer comprises source/drain extensions and a channel region interposing the source/drain extensions;

a gate electrode having a second width and located over the pedestal, wherein the second width is substantially less than the first width;

source/drain stressors located over the bulk semiconductor portion, wherein the source/drain stressors each span the insulating layer portion of the pedestal and contact a corresponding one of the source/drain extensions; and

doped regions formed in the bulk semiconductor portion of the silicon-on-insulator substrate thus separating the remainder of the bulk semiconductor portion from the source/drain stressors;

wherein the source/drain stressors each have a first lattice structure that is different relative to at least one of a second lattice structure of the source/drain extensions and a third lattice structure of the doped regions formed in the bulk semiconductor portion of the silicon-on-insulator substrate.

11. The device of claim 10 wherein the first lattice structure of the source/drain stressors is different relative to each of the second lattice structure of the source/drain extensions and the third lattice structure of the doped regions formed in the bulk semiconductor portion of the silicon-on-insulator substrate.

12. The device of claim 10 wherein the thin semiconductor layer comprises a first material and the source/drain stressors each comprise a second material that is different from the first material, and wherein each of the first and second materials are selected from the group consisting of:

silicon;

silicon germanium;

silicon carbide; and

silicon germanium carbide.

13. The device of claim 10 wherein the thin semiconductor layer has a thickness of about 200 angstroms.

14. A microelectronic device, comprising:

a silicon-on-insulator substrate having an insulating layer interposing a bulk semiconductor portion and a thin semiconductor layer;

a pedestal defined from the thin semiconductor and insulating layers, wherein the portion of the pedestal defined from the thin semiconductor layer comprises a source extension, a drain extension, and a channel region interposing the source and drain extensions;

a gate electrode located over the pedestal, wherein the gate electrode is greater in width relative to

a substantial portion of the pedestal; and

a source stressor and a drain stressor located on opposing sides of the pedestal and each contacting a corresponding one of the source and drain extensions, wherein at least one of the source and drain stressors is thicker than the channel region.

15. The device of claim 14 wherein the source and drain stressors each comprise a semiconductor material having a different lattice constant relative to the channel region lattice constant.

16. The device of claim 14 wherein the thin semiconductor layer, the source stressor, and the drain stressor each comprise a material selected from the group consisting of:

silicon;

silicon germanium;

silicon carbide; and

silicon germanium carbide.

17. The device of claim 14 wherein the thin semiconductor layer has a thickness of about 200 angstroms.