Level shifter for detecting grounded power-supply and level shifting method

• US 7,112,996 B2
• Filed: 07/19/2004
• Issued: 09/26/2006
• Est. Priority Date: 08/01/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jong-Hwa
• Primary Examiner(s): Barnie, Rexford
• Assistant Examiner(s): Crawford, Jason
• Application Number:
  US10/894,679
• Publication Number:
  US 20050024088A1
• Time in Patent Office: 799 Days
• Field of Search: 326/68, 326/63, 326 80- 83, 326/86
• US Class Current: 326/68
• CPC Class Codes: H03K 3/356008 ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00
• CPC Class Codes: H03K 3/356113 using additional transistors in the input circuit

Abstract

A level shifter includes an input buffer, a level shifting circuit, a voltage level detecting circuit, an output buffer and a reference logic circuit. The input buffer buffers a small range input signal to output a small range signal. The level shifting circuit transforms the small range signal into a first wide range signal. The voltage level detecting circuit detects whether a power voltage of a low voltage stage is at the ground level, and prevents an indefinite logic state of the level shifter. The output buffer buffers the first wide range signal to output a second wide range signal. The reference logic circuit generates a wide range signal having a predetermined logic status when the power voltage is at the ground level. Thus, a leakage current of the level shifter is reduced.

Claims

1. A level shifter comprising:

an input buffer, coupled to a first power voltage, configured to buffer an input signal swinging between a base level and a first voltage level to output a first small range signal having a reversed phase with respect to the input signal, and a second small range signal having substantially the same phase with respect to the input signal;

a level shifting circuit having a first node and a second node, coupled to a second power voltage higher than the first power voltage, configured to transform the first and second small range signals into a first wide range signal and a second wide range signal, respectively, to output the first wide range signal via the first node and the second wide range signal via the second node when the first power voltage is higher than a given specified voltage level, the first and second wide range signals swinging between the base level and a second voltage level higher than the first voltage level;

a voltage level detecting circuit configured to detect whether the first power voltage is lower than the given specified voltage level, and configured to maintain voltage levels of the first and second nodes as higher than or equal to a third voltage level to prevent floating of the first and second nodes by forming at least one of a first conduction path and a second conduction path through the voltage level detecting circuit between the first and second nodes when the first power voltage is lower than the specified voltage level, the third voltage level being lower than the second voltage level;

an output buffer configured to buffer the first and second wide range signals to output third and fourth wide range signals; and

a reference logic circuit, the reference logic circuit receiving the third and fourth wide range signals, outputting a fifth wide range signal having substantially the same phase with respect to the input signal when the first power voltage is equal to or greater than the given specified voltage level, and outputting the fifth wide range signal having a predetermined logic level regardless of the logic level of the input signal when the first power voltage is lower than the given specified voltage level.

2. The level shifter of claim 1, wherein the input buffer comprises:

a first inverter, coupled to the first power voltage, configured to invert the input signal to output the first small range signal; and

a second inverter, coupled to the first power voltage, configured to invert the first small range signal to output the second small range signal.

3. The level shifter of claim 1, wherein the output buffer comprises:

a third inverter, coupled to the second power voltage, configured to invert the first wide range signal to output a third wide range signal; and

a fourth inverter, coupled to the second power voltage, configured to invert the second wide range signal to output a fourth wide range signal.

4. The level shifter of claim 3, wherein a logic reference voltage of the third inverter or the fourth inverter corresponds to ⅓

of the second power voltage.

5. The level shifter of claim 1, wherein the reference logic circuit comprises:

a first NOR circuit configured to perform a NOR operation on the third and fourth wide range signals; and

a second NOR circuit configured to perform the NOR operation on an output of the first NOR circuit and the fourth wide range signal.

6. The level shifter of claim 1, wherein the reference logic circuit comprises:

a first NAND circuit configured to perform a NAND operation on the third and fourth wide range signals; and

a second NAND circuit configured to perform the NAND operation on an output signal of the first NAND circuit and the fourth wide range signal.

7. The level shifter of claim 1, wherein the level shifting circuit comprises:

a first NMOS transistor having a control electrode for receiving the first small range signal;

a second NMOS transistor having a control electrode for receiving the second small range signal;

a first PMOS transistor having a first current electrode coupled to the second power voltage and a second current electrode coupled to a second current electrode of the first NMOS transistor; and

a second PMOS transistor having a first current electrode coupled to the second power voltage, a second current electrode coupled to a second current electrode of the second NMOS transistor and a control electrode of the first PMOS transistor, and a control electrode coupled to the second current electrode of the first PMOS transistor.

8. The level shifter of claim of 7, wherein the voltage level detecting circuit comprises:

a first transistor having a second current electrode and a control electrode commonly coupled to the second current electrode of the first PMOS transistor;

a second transistor having a first current electrode coupled to a first electrode of the first transistor, a control electrode coupled to the first power voltage, and a second current electrode coupled to the second current electrode of the second PMOS transistor;

a third transistor having a second current electrode and a control electrode commonly coupled to the second current electrode of the second PMOS transistor; and

a fourth transistor having a first current electrode coupled to a first current electrode of the third transistor, a control electrode coupled to the first power voltage, and a second current electrode coupled to the second current electrode of the first PMOS transistor.

9. The level shifter of claim 8, wherein a ratio of a channel length of the second transistor to a channel length of the first transistor is in a range from about 1.3:

1 to about 2;

1.

10. The level shifter of claim 1, wherein the voltage level detecting circuit detects the specified voltage level when the first and second nodes have the third voltage level.

11. The level shifter of claim 1, wherein the voltage level detecting circuit comprises:

a first current path for forming the first conduction path between the first and second nodes, for transmitting the first wide range signal having a high-voltage logic ‘

high’

to the second node when the first power voltage is less than the specified voltage level, so that the second node is maintained as substantially the third voltage level; and

a second current path for forming the second conduction path between the first and second nodes, for transmitting the second wide range signal having the high-voltage logic ‘

high’

to the first node when the first power voltage is less than the specified voltage level, so that the first node is maintained as substantially the third voltage level,

wherein the first and second current paths are disabled while the first power voltage is higher than the specified voltage level.

12. A level shifter comprising:

an input terminal coupled to an input signal having a small range swinging between a base level and a first voltage level;

a first power supply voltage terminal coupled to a first power supply voltage;

a second power supply voltage terminal coupled to a second power voltage higher than the first power voltage;

an input buffer, coupled to the first power voltage, configured to buffer the input signal to output a first small range signal having a reversed phase with respect to the input signal, and a second small range signal having substantially the same phase with respect to the input signal;

a level shifting circuit having a first node and a second node, the level shifting circuit coupled to the input buffer and the second power voltage terminal, voltage, configured to transform the first and second small range signals into a first wide range signal and a second wide range signal, respectively, when the first power voltage is higher than a specified voltage level, and configured to output the first and second wide range signals via the first and second nodes, respectively, the second wide range signal swinging between the base level and a second voltage level higher than the first voltage level;

a voltage level detecting circuit coupled to the level shifting circuit and the second voltage terminal, configured to detect whether the first power voltage is lower than the given specified voltage level, and configured to maintain voltage levels of the first and second nodes as higher than or equal to a third voltage level to prevent floating of the first and second nodes by forming at least one of a first conduction path and a second conduction path through the voltage level detecting circuit between the first and second nodes when the first power voltage is lower than the specified voltage level,

an output buffer configured to buffer the first and second wide range signals to output third and fourth wide range signals; and

a reference logic circuit, the reference logic circuit receiving the third and fourth wide range signals, outputting a fifth wide range signal having substantially the same phase with respect to the input signal when the first power voltage is equal to or greater than the given specified voltage level, and outputting the fifth wide range signal having a predetermined logic level regardless of the logic level of the input signal when the first power voltage is lower than the given specified voltage level.

13. The level shifter of claim 12, wherein the reference logic circuit comprises:

a first NOR circuit configured to perform a NOR operation on the third and fourth wide range signals; and

a second NOR circuit configured to perform the NOR operation on an output of the first NOR circuit and the fourth wide range signal.

14. The level shifter of claim 12, wherein the reference logic circuit comprises:

a first NAND circuit configured to perform a NAND operation on the third and fourth wide range signals; and

a second NAND circuit configured to perform the NAND operation on an output signal of the first NAND circuit and the fourth wide range signal.

15. The level shifter of claim 12, wherein the voltage level detecting circuit comprises:

a first current path for forming the first conduction path between the first and second nodes, for transmitting the first wide range signal having a high-voltage logic ‘

high’

to the second node when the first power voltage is less than the specified voltage level, so that the second node is maintained as substantially the third voltage level; and

a second current path for forming the second conduction path between the first and second nodes, for transmitting the second wide range signal having the high-voltage logic ‘

high’

to the first node when the first power voltage is less than the specified voltage level, so that the first node is maintained as substantially the third voltage level, wherein the first and second current paths are disabled while the first power voltage is higher than the specified voltage level.

16. A level shifter comprising:

a first inverter coupled to a first power voltage, configured to invert an input signal to output a first small range signal having a reversed phase with respect to the input signal;

a second inverter coupled to the first power voltage, configured to invert the first small range signal to output a second small range signal having substantially the same phase with respect to the input signal;

a first NMOS transistor having a control electrode coupled to the first small range signal;

a second NMOS transistor having a control electrode coupled to the second small range signal;

a first PMOS transistor having a first current electrode coupled to a second power voltage and a second current electrode coupled to a second current electrode of the first NMOS transistor, the second power voltage being higher than the first power voltage;

a second PMOS transistor having a first current electrode coupled to the second power voltage, a second current electrode coupled to a second current electrode of the second NMOS transistor and a control electrode of the first PMOS transistor, and a control electrode coupled to the second current electrode of the first PMOS transistor;

a first transistor having a second current electrode and a control electrode commonly coupled to the second current electrode of the first PMOS transistor;

a second transistor having a control electrode coupled to the first power voltage, configured to be turned on to form a first conduction path between the first and second PMOS transistors when the first power voltage is lower than a specified voltage level;

a third transistor having a second current electrode and a control electrode commonly coupled to the second current electrode of the second PMOS transistor; and

a fourth transistor having a control electrode coupled to the first power voltage, configured to be turned on to form a second conduction path between the first and second PMOS transistors when the first power voltage is lower than the specified voltage level.

17. A level shifter comprising:

an input buffer, coupled to a first power voltage, configured to buffer an input signal swinging between a base level and a first voltage level to output a small range signal;

a level shifting circuit having a first node and a second node, the level shifting circuit coupled to a second power voltage higher than the first power voltage, configured to transform the small range signal into a first wide range signal to output the first wide range signal when the first power voltage is higher than a specified voltage level, the first wide range signal swinging between the base level and a second voltage level higher than the first voltage level;

a voltage level detecting circuit between the first node and the second node, the voltage level detecting circuit configured to detect whether the first power voltage is lower than the specified voltage level, and configured to maintain a voltage level of the first wide range signal as higher than or equal to a third voltage level by forming at least one of a first conduction path and a second conduction path through the voltage level detecting circuit between the first and second nodes when the first power voltage is lower than the specified voltage level, the third voltage level being lower than the second voltage level;

an output buffer configured to buffer the first and second wide range signals to output third and fourth wide range signals; and

a reference logic circuit, the reference logic circuit receiving the third and fourth wide range signals, outputting a fifth wide range signal having substantially the same phase with respect to the input signal when the first power voltage is equal to or greater than the given specified voltage level, and outputting the fifth wide range signal having a predetermined logic level regardless of the logic level of the input signal when the first power voltage is lower than the given specified voltage level.

18. A level shifting method comprising:

receiving a first power voltage, and buffering an input signal swinging between a base level and a first voltage level to output a first small range signal having a reversed phase with respect to the input signal and a second small range signal having substantially the same phase with respect to the input signal;

receiving a second power voltage higher than the first power voltage, and transforming the first and second small range signals into a first wide range signal and a second wide range signal, respectively, to output the first and second wide range signals via first and second nodes, respectively when the first power voltage is higher than a specified voltage level, the first and second wide range signals swinging between the base level and a second voltage level higher than the first voltage level;

maintaining voltage levels of the first and second wide range signals at the first and second nodes as higher than or equal to a third voltage level when the first power voltage is lower than the specified voltage level by forming a conduction path between the first and second nodes, the third voltage level being lower than the second voltage level;

buffering the first and second wide range signals to output third and fourth wide range signals, respectively, swinging between the base level and the second voltage level;

outputting a fifth wide range signal having substantially the same phase with respect to the input signal when the first power voltage is equal to or greater than the specified voltage level; and

outputting the fifth wide range signal having a predetermined logic level regardless of the logic level of the input signal when the first power voltage is lower than the specified voltage level.

19. A level shifting method comprising:

receiving a first power voltage, and buffering an input signal swinging between a base level and a first voltage level to output a small range signal swinging between the base level and the first voltage level;

receiving a second power voltage higher than the first power voltage, and transforming the small range signal into a first wide range signal when the first power voltage is higher than a specified voltage level, the first wide range signal swinging between the base level and a second voltage level higher than the first voltage level;

maintaining a voltage level of the first wide range signal as higher than or equal to a third voltage level when the first power voltage is lower than the specified voltage level, the third voltage level being lower than the second voltage level;

buffering the first wide range signal to output a second wide range signal swinging between the base level and the second voltage level;

outputting a third wide range signal having substantially the same phase with respect to the input signal when the first power voltage is equal to or greater than the specified voltage level; and

outputting the third wide range signal having a predetermined logic level regardless of the logic level of the input signal when the first power voltage is lower than the specified voltage level.