Adaptive radio transceiver with a power amplifier

• US 7,113,744 B1
• Filed: 10/18/2000
• Issued: 09/26/2006
• Est. Priority Date: 10/21/1999
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Broadcom Corporation (Broadcom, Inc.)
• Inventors: Rofougaran, Maryam, Moloudi, Shervin
• Primary Examiner(s): Milord, Marceau
• Application Number:
  US09/691,634
• Time in Patent Office: 2,169 Days
• Field of Search: 455/20, 455/341, 455/22, 455/333, 455/118, 455/113, 455/139, 455/190.1, 455/192.1, 455/194.2, 455/251.1, 455/323, 455/78, 455/191.3, 455/73, 455/84, 455/86, 455/302, 455/307, 330/124.R, 330/295, 330/84, 330/310, 330/311, 330/253, 340/3.51, 700/83, 375/220, 375/344, 375/222, 430/630, 430/180
• US Class Current: 455/20
• CPC Class Codes: H03H 11/1291 Current or voltage controlled filters
• CPC Class Codes: H03H 2011/0494 Complex filters
• CPC Class Codes: H03H 21/0001 Analogue adaptive filters
• CPC Class Codes: H03H 21/0012 Digital adaptive filters
• CPC Class Codes: H03J 2200/10 Tuning of a resonator by means of digitally controlled capacitor bank
• CPC Class Codes: H04B 17/104 of other parameters, e.g. DC offset, delay or propagation times
• CPC Class Codes: H04B 17/19 Self-testing arrangements

Abstract

An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The controller for adaptive programming and calibration of the receiver, transmitter and LO generator. The self-testing unit generates is used to determine the gain, frequency characteristics, selectivity, noise floor, and distortion behavior of the receiver, transmitter and LO generator. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Claims

1. An amplifier, comprising:

a plurality of differential pairs coupled together through a common differential output, each differential pair having a current control input; and

a current switch coupled to the current control input of one of the differential pairs to selectively switch said one of the differential pairs in or out of the amplifier,

wherein the current switch comprises a current source having a switch control input,

wherein a bias circuit is coupled to the switch control input,

wherein the bias circuit generates a bias current that is applied to the switch control input, and

wherein the bias circuit comprises a first bias circuit having a first bias current exhibiting a positive temperature coefficient, a second bias circuit having a second bias current exhibiting a negative temperature coefficient, and a summer to sum the first and second bias currents, the summed first and second bias currents being applied to the switch control input.

2. The amplifier of claim 1 wherein the differential pairs each comprises first and second transistors coupled together through a common a node, the common node comprising the current control input.

3. The amplifier of claim 2 wherein the transistors each comprises a field effect transistor.

4. The amplifier of claim 3 wherein the first and second transistors in each differential pair each comprises a source coupled to its respective common node.

5. The amplifier of claim 4 wherein the first and second transistors in each of the differential pairs each comprises a gate, the gates of the first transistors being coupled together and the gates of the second transistors being coupled together to form a differential input.

6. The amplifier of claim 3 wherein the first and second transistors in each of the differential pairs each comprises a drain, the drains of the first transistors being coupled together and the drains of the second transistors being coupled together to form the differential output.

7. The amplifier of claim 1 wherein the current switch comprises a transistor.

8. The amplifier of claim 7 wherein the transistor comprises a field effect transistor.

9. The amplifier of claim 8 wherein the transistor comprises a drain coupled to its respective current control input.

10. The amplifier of claim 1 wherein the bias current is substantially independent of temperature.

11. The amplifier of claim 10 wherein the current source comprises a field effect transistor having a gate comprising the switch control input.

12. The amplifier of claim 1 wherein the summer comprises a cascode current mirror.

13. The amplifier of claim 1 further comprising a matching circuit coupled to the common differential output.

14. The amplifier of claim 13 wherein the matching circuit converts a differential current from the common differential output to a single-ended current.

15. The amplifier of claim 13 wherein the matching circuit provides an impedance transformation which is independent of whether said one of the differential pairs is switched in or out of the amplifier.

16. The amplifier of claim 13 wherein the common differential output comprises first and second outputs, and the matching circuit comprises an inductor having a first end coupled to the first output and a capacitor having a first end coupled to the second output, the inductor and capacitor each having second end coupled together.

17. The amplifier of claim 1 wherein the differential pairs are further coupled together through a common differential input, the amplifier further comprising an input stage coupled to the common differential input.

18. The amplifier of claim 1 further comprising a plurality of current switches each coupled to the current control input for a different one of the differential pairs to selectively switch its respective differential pair in or out of the amplifier.

19. The amplifier of claim 1 wherein the amplifier is part of a wireless communications device that performs orthogonal frequency division multiplexing.

20. The amplifier of claim 1 wherein the amplifier is part of a wireless communications device that performs spread spectrum modulation.

21. The amplifier of claim 1 wherein the amplifier is part of a wireless communications device that performs frequency hopping spread spectrum modulation.

22. The amplifier of claim 1 wherein the amplifier is part of a wireless communications device that performs direct sequence spread spectrum modulation.

23. The amplifier of claim 1 wherein the amplifier is part of a transmitter in a wireless communications device that performs spread spectrum modulation.

24. The amplifier of claim 1 wherein the amplifier is part of an integrated circuit CMOS transmitter in a wireless communications device that performs spread spectrum modulation.

25. The amplifier of claim 1 wherein the amplifier is part of a single integrated chip transceiver in a wireless communications device that performs spread spectrum modulation.

26. An amplifier, comprising:

a plurality of amplifying stages each having first and second transistors, the first and second transistors each having first, second and third nodes, the first nodes of the first transistors being coupled together and the first nodes of the second transistors being coupled together to form a differential output, the second nodes of the first transistors being coupled together and the second nodes of the second transistors being coupled together to form a differential input, and the third node of each of the first transistors being coupled to the third node of its respective second transistor to form a current control input for each of the amplifying stages; and

a current switch coupled to the current control input of one the amplifying stage to switch said one of the amplifying stages in or out of the amplifier.

27. The amplifier of claim 26 wherein the transistors each comprises a field effect transistor.

28. The amplifier of claim 27 wherein the third nodes each comprises a source.

29. The amplifier of claim 28 wherein the second nodes each comprises a gate.

30. The amplifier of claim 27 wherein the first nodes each comprises a drain.

31. The amplifier of claim 26 wherein the current switch comprises a transistor.

32. The amplifier of claim 31 wherein the transistor comprises a field effect transistor.

33. The amplifier of claim 32 wherein the transistor comprises a drain coupled to its respective current control input.

34. The amplifier of claim 26 wherein the current switch comprises a current source having a switch control input.

35. The amplifier of claim 34 further comprising a bias circuit coupled to the switch control input.

36. The amplifier of claim 35 wherein the bias circuit generates a bias current which is substantially independent of temperature, the bias current being applied the switch control input.

37. The amplifier of claim 36 wherein the bias circuit comprises a first bias circuit having a first bias current exhibiting a positive temperature coefficient, a second bias circuit having a second bias current exhibiting a negative temperature coefficient, and a summer to sum the first and second bias currents, the summed first and second bias currents being applied to the switch control input.

38. The amplifier of claim 37 wherein the summer comprises a cascode current mirror.

39. The amplifier of claim 38 wherein the current source comprises a field effect transistor having a gate comprising the switch control input.

40. The amplifier of claim 26 further comprising a matching circuit coupled to the differential output.

41. The amplifier of claim 40 wherein the matching circuit converts a differential current from the differential output to a single-ended current.

42. The amplifier of claim 40 wherein the matching circuit provides an impedance transformation which is independent of whether said one of the amplifying stages is switched in or out of the circuit.

43. The amplifier of claim 40 wherein the common differential output comprises first and second outputs, and the matching circuit comprises an inductor having a first end coupled to the first output and a capacitor having a first end coupled to the second output, the inductor and capacitor each having second end coupled together.

44. The amplifier of claim 26 further comprising an input stage coupled to the differential input.

45. The amplifier of claim 26 further comprising a plurality of current switches each coupled the current control input for a different one of the amplifying stages to selectively switch its respective amplifying stage in or out of the amplifier.

46. The amplifier of claim 26 wherein the amplifier is part of a wireless communications device that performs orthogonal frequency division multiplexing.

47. The amplifier of claim 26 wherein the amplifier is part of a wireless communications device that performs spread spectrum modulation.

48. The amplifier of claim 26 wherein the amplifier is part of a wireless communications device that performs frequency hopping spread spectrum modulation.

49. The amplifier of claim 26 wherein the amplifier is part of a wireless communications device that performs direct sequence spread spectrum modulation.

50. The amplifier of claim 26 wherein the amplifier is part of a transmitter in a wireless communications device that performs spread spectrum modulation.

51. The amplifier of claim 26 wherein the amplifier is part of an integrated circuit CMOS transmitter in a wireless communications device that performs spread spectrum modulation.

52. The amplifier of claim 26 wherein the amplifier is part of a single integrated chip transceiver in a wireless communications device that performs spread spectrum modulation.

53. An amplifier, comprising:

a plurality of amplifying stages coupled together, each of the amplifying stages having a current control input; and

a current switch coupled to the current control input of one of the amplifying stages to selectively switch said one of the amplifying stages in or out of the circuit,

wherein the current switch comprises a current source having a switch control input,

wherein a bias circuit is coupled to the switch control inputs,

wherein the bias circuit generates a bias current that is applied to the switch control input, and

wherein the bias circuit comprises a first bias circuit having a first bias current exhibiting a positive temperature coefficient, a second bias circuit having a second bias current exhibiting a negative temperature coefficient, and a summer to son the first and second bias currents, the summed first and second bias currents being applied to the switch control input.

54. The amplifier of claim 53 wherein the amplifying stages each comprises first and second transistors coupled together through a common a node, the common node comprising the current control input.

55. The amplifier of claim 54 wherein the transistors each comprises a field effect transistor.

56. The amplifier of claim 55 wherein the first and second transistors in each amplifying stage comprises a source coupled to its respective common node.

57. The amplifier of claim 56 wherein the first and second transistors in each of the amplifying stages each comprises a gate, the gates of the first transistors being coupled together and the gates of the second transistors being coupled together to form a differential input.

58. The amplifier of claim 55 wherein the first and second transistors in each of the differential pairs each comprises a drain, the drains of the first transistors being coupled together and the drains of the second transistors being coupled together to form a differential output.

59. The amplifier of claim 53 wherein the current switch comprises a transistor.

60. The amplifier of claim 59 wherein the transistor comprises a field effect transistor.

61. The amplifier of claim 60 wherein the transistor comprises a drain coupled to its respective current control input.

62. The amplifier of claim 53 wherein the bias current is substantially independent of temperature.

63. The amplifier of claim 62 wherein the current source comprises a field effect transistor having a gate comprising the switch control input.

64. The amplifier of claim 53 wherein the summer comprises a cascode current mirror.

65. The amplifier of claim 53 further comprising a matching circuit coupled to the differential output.

66. The amplifier of claim 65 wherein the matching circuit converts a differential current from the differential output to a single-ended current.

67. The amplifier of claim 65 wherein the matching circuit provides an impedance transformation which is independent of whether said one of the amplifying stages is switched in or out of the circuit.

68. The amplifier of claim 65 wherein the differential output comprises first and second outputs, and the matching circuit comprises an inductor having a first end coupled to the first output and a capacitor having a first end coupled to the second output, the inductor and capacitor each having second end coupled together.

69. The amplifier of claim 53 wherein the amplifying stages are coupled together to form a differential input, the amplifier further comprising an input stage coupled to the differential input.

70. The amplifier of claim 53 further comprising a plurality of current switches each coupled to the current control input for a different one of the amplifying stage to selectively switch its respective amplifying stage in or out of the amplifier.

71. The amplifier of claim 53 wherein the amplifier is part of a wireless communications device that performs orthogonal frequency division multiplexing.

72. The amplifier of claim 53 wherein the amplifier is part of a wireless communications device that performs spread spectrum modulation.

73. The amplifier of claim 53 wherein the amplifier is part of a wireless communications device that performs frequency hopping spread spectrum modulation.

74. The amplifier of claim 53 wherein the amplifier is part of a wireless communications device that performs direct sequence spread spectrum modulation.

75. The amplifier of claim 53 wherein the amplifier is part of a transmitter in a wireless communications device that performs spread spectrum modulation.

76. The amplifier of claim 53 wherein the amplifier is part of an integrated circuit CMOS transmitter in a wireless communications device that performs spread spectrum modulation.

77. The amplifier of claim 53 wherein the amplifier is part of a single integrated chip transceiver in a wireless communications device that performs spread spectrum modulation.

78. An amplifier comprising:

a digitally programmable power level and a matching circuit which is substantially independent of the programmed power level; and

a plurality of amplifying stages coupled together, each of the amplifying stages having a current control input, and a plurality of current switches to digitally program the power level of the amplifier, the current switches each being coupled to the current control input for a different one of the amplifying states to selectively switch its respective amplifying stage in or out of the amplifier,

wherein the current switches each comprises a current source having, a switch control input,

wherein a plurality of bias circuits each is coupled to a different one of the switch control inputs,

wherein the bias circuits each generates a bias current that is applied to its respective switch control input, and

wherein the bias circuits each comprises a first bias circuit having a first bias current exhibiting a positive temperature coefficient, a second bias circuit having a second bias current exhibiting a negative temperature coefficient, and a summer to sum the first and second bias currents, the summed first and second bias currents being applied to the its respective switch control input.

79. The amplifier of claim 78 wherein the amplifier comprises CMOS.

80. The amplifier of claim 78 wherein the amplifying stages each comprises first and second transistors coupled together through a common a node, the common node comprising the current control input.

81. The amplifier of claim 80 wherein the transistors each comprises a field effect transistor.

82. The amplifier of claim 81 wherein the first and second transistors in each amplifying stage comprises a source coupled to its respective common node.

83. The amplifier of claim 82 wherein the first and second transistors in each of the amplifying stages each comprises a gate, the gates of the first transistors being coupled together and the gates of the second transistors being coupled together to form a differential input.

84. The amplifier of claim 81 wherein the first and second transistors in each of the differential pairs each comprises a drain, the drains of the first transistors being coupled together and the drains of the second transistors being coupled together to form a differential output.

85. The amplifier of claim 78 wherein the current switches each comprises a transistor.

86. The amplifier of claim 85 wherein the transistors each comprises a field effect transistor.

87. The amplifier of claim 86 wherein the transistors each comprises a drain coupled to its respective current control input.

88. The amplifier of claim 78 wherein the bias current is substantially independent of temperature.

89. The amplifier of claim 88 wherein the current sources each comprises a field effect transistor having a gate comprising the switch control input.

90. The amplifier of claim 78 wherein the summer comprises a cascode current mirror.

91. The amplifier of claim 78 wherein the amplifier is part of a wireless communications device that performs orthogonal frequency division multiplexing.

92. The amplifier of claim 78 wherein the amplifier is part of a wireless communications device that performs spread spectrum modulation.

93. The amplifier of claim 78 wherein the amplifier is part of a wireless communications device that performs frequency hopping spread spectrum modulation.

94. The amplifier of claim 78 wherein the amplifier is part of a wireless communications device that performs direct sequence spread spectrum modulation.

95. The amplifier of claim 78 wherein the amplifier is part of a transmitter in a wireless communications device that performs spread spectrum modulation.

96. The amplifier of claim 78 wherein the amplifier is part of an integrated circuit CMOS transmitter in a wireless communications device that performs spread spectrum modulation.

97. The amplifier of claim 78 wherein the amplifier is part of a single integrated chip transceiver in a wireless communications device that performs spread spectrum modulation.

98. An amplifier, comprising:

a plurality of amplifying stages coupled together;

switching means for switching one of the amplifying stages in or out of the amplifier to program power of the amplifier; and

matching means for matching a load coupled to an output of the amplifier, the matching means being substantially independent of the programmed power,

wherein the amplifying stages comprises a differential output having first and second outputs, and the matching circuit comprises an inductor having a first end coupled to the first output and a capacitor having a first end coupled to the second output, the inductor and capacitor each having second end coupled to the amplifier output.

99. The amplifier of claim 98 wherein each of said one of the amplifying stage comprises first and second transistors coupled together through a common a node, the common node comprising the current control input.

100. The amplifier of claim 99 wherein the transistors each comprises a field effect transistor.

101. The amplifier of claim 100 wherein the first and second transistors each comprises a source coupled to its respective common node.

102. The amplifier of claim 101 wherein the amplifying stages each comprises first and second field effect transistors each having a gate, the gates of the first transistors being coupled together and the gates of the second transistors being coupled together to form a differential input.

103. The amplifier of claim 100 wherein the amplifying stages each comprises first and second field effect transistors each having a drain, the drains of the first transistors being coupled together and the drains of the second transistors being coupled together to form a differential output.

104. The amplifier of claim 98 wherein the switching means comprises a transistor.

105. The amplifier of claim 104 wherein the transistor comprises a field effect transistor.

106. The amplifier of claim 105 wherein the transistor comprises a drain coupled to said one of the amplifying stages.

107. The amplifier of claim 98 wherein the switching means comprises a current source having a switch control input.

108. The amplifier of claim 107 further comprising a bias circuit coupled to the switch control input.

109. The amplifier of claim 108 wherein the bias circuit comprises means for generating a bias current which is substantially independent of temperature, the bias current being applied to the switch control input.

110. The amplifier of claim 108 wherein the bias circuit comprises means for generating a first bias current exhibiting a positive temperature coefficient, means for generating a second bias current exhibiting a negative temperature coefficient, and means for summing the first and second bias currents, the summed first and second bias currents being applied to the switch control input.

111. The amplifier of claim 108 wherein the summer comprises a cascode current mirror.

112. The amplifier of claim 98 wherein the matching means comprises means for converting a differential current generated by the amplifier stage to a single-ended current, the single-ended current being coupled to the amplifier output.

113. The amplifier of claim 98 wherein the amplifier is part of a wireless communications device that performs orthogonal frequency division multiplexing.

114. The amplifier of claim 98 wherein the amplifier is part of a wireless communications device that performs spread spectrum modulation.

115. The amplifier of claim 98 wherein the amplifier is part of a wireless communications device that performs frequency hopping spread spectrum modulation.

116. The amplifier of claim 98 wherein the amplifier is part of a wireless communications device that performs direct sequence spread spectrum modulation.

117. The amplifier of claim 98 wherein the amplifier is part of a transmitter in a wireless communications device that performs spread spectrum modulation.

118. The amplifier of claim 98 wherein the amplifier is part of an integrated circuit CMOS transmitter in a wireless communications device that performs spread spectrum modulation.

119. The amplifier of claim 98 wherein the amplifier is part of a single integrated chip transceiver in a wireless communications device that performs spread spectrum modulation.