Methods for forming capacitor structures

• US 7,115,515 B2
• Filed: 08/22/2005
• Issued: 10/03/2006
• Est. Priority Date: 04/25/2002
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sinha, Nishant
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US11/208,793
• Publication Number:
  US 20060003537A1
• Time in Patent Office: 407 Days
• Field of Search: 438/689, 438/690, 438/386, 438/396
• US Class Current: 438/690
• CPC Class Codes: G03F 7/42 Stripping or agents therefor
• CPC Class Codes: G03F 7/425 containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/0335 Making a connection between the transistor and the capacitor, e.g. plug

Abstract

The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to remove the organic material from the substrate. The polishing fluid can be essentially free of particles, and can be water.

Claims

1. A method for forming a capacitor structure comprising:

providing a substrate comprising an insulative layer over a semiconductive layer, the insulative layer having a recess therein, the recess having a periphery comprising a bottom and sidewalls, wherein the bottom comprises an upper surface of the semiconductive layer;

forming a first conductive-material-comprising layer over the substrate, the first conductive-material-comprising layer lining the bottom and the sidewalls to partially fill the recess and extending laterally outward from the recess over an upper surface of the substrate;

filling the partially filled recess with an organic material, the filling forming an organic material layer over an upper surface of the first conductive-material-comprising layer;

removing at least a portion of the organic material with a pad and an organic-material-removing fluid, wherein the organic-material-removing fluid is substantially unreactive with the first conductive-material-comprising layer and comprises less than or equal to 0.1 weight percent particles at an initiation of the removing;

stopping the removing when substantially all of an upper surface of the laterally extending first conductive-material-comprising layer is exposed;

forming a dielectric layer over the first conductive-material-comprising layer; and

forming a second conductive-material-comprising layer over the dielectric layer.

2. The method of claim 1 wherein the organic-material-removing fluid comprises about 0 weight percent particles at an initiation of the removing.

3. The method of claim 1 wherein the organic material comprises one or more of photoresist, non-photosensitive resist and polyimide.

4. The method of claim 1 further comprising baking the organic material prior to the removing.

5. The method of claim 1 wherein, after stopping the removing, a plug of the organic material remains in the recess and, prior to forming the dielectric layer, removing the plug to expose the first conductive-material-comprising layer lining the bottom and the sidewalls.

6. The method of claim 5 wherein the removing the plug comprises a chemical or plasma process.

7. The method of claim 1 wherein the first conductive-material-comprising layer comprises one or more of platinum, iridium, ruthenium, and tantalum.

8. The method of claim 1 wherein the first conductive-material-comprising layer comprises one or both of tantalum silicon nitride and tantalum nitride.