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Semiconductor memory element, semiconductor memory device and method of fabricating the same

  • US 7,115,941 B2
  • Filed: 12/16/2003
  • Issued: 10/03/2006
  • Est. Priority Date: 12/18/2002
  • Status: Expired due to Fees
First Claim
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1. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,wherein the semiconductor memory element is formed over a substrate having an insulating surface;

  • wherein the semiconductor active layer is a polycrystal semiconductor film;

    wherein a grain boundary of a crystal grain in the polycrystal semiconductor film is flat or formed with a recessed portion; and

    wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value.

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