Semiconductor memory element, semiconductor memory device and method of fabricating the same
First Claim
1. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,wherein the semiconductor memory element is formed over a substrate having an insulating surface;
- wherein the semiconductor active layer is a polycrystal semiconductor film;
wherein a grain boundary of a crystal grain in the polycrystal semiconductor film is flat or formed with a recessed portion; and
wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value.
1 Assignment
0 Petitions
Accused Products
Abstract
It is an object to provide a semiconductor memory device having a highly reliable and small-sized nonvolatile memory by realizing a semiconductor memory element which restrains extreme concentration of an electric field onto a surface of active layer in a channel region and is very minute. Further, it is an object thereof to provide a highly reliable and small-sized semiconductor memory device. There is fabricated a semiconductor memory element in which a surface of an active layer is flat and which is very minute by using a crystallizing process of a semiconductor active layer for adding a metal element onto a substrate having an insulating surface to subject to a heating processing and thereafter carrying out continuous oscillating laser irradiation. By using such a semiconductor memory element, a highly reliable and small-sized nonvolatile memory and a semiconductor memory device having the nonvolatile memory are provided.
36 Citations
23 Claims
-
1. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,
wherein the semiconductor memory element is formed over a substrate having an insulating surface; -
wherein the semiconductor active layer is a polycrystal semiconductor film; wherein a grain boundary of a crystal grain in the polycrystal semiconductor film is flat or formed with a recessed portion; and wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
-
-
2. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,
wherein the semiconductor memory element is formed over a substrate having an insulating surface; -
wherein the semiconductor active layer is a polycrystal semiconductor film constituted by aggregating a plurality of crystal grains elongated in the same direction; and wherein a grain boundary of the crystal grain constituting the polycrystal semiconductor film is flat or formed with a recessed portion.
-
-
3. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,
wherein the semiconductor memory element is formed over a substrate having an insulating surface; -
wherein the channel region is a polycrystal semiconductor film crystallized by being irradiated with a continuously oscillating laser beam at least in the same channel region; and wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value.
-
-
4. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode;
-
wherein the semiconductor memory element is formed over a substrate having an insulating surface, wherein the semiconductor active layer is a polycrystal semiconductor film constituted by aggregating a plurality of crystal grains elongated in the same direction; and wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value.
-
-
5. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,
wherein the semiconductor memory element is formed over a substrate having an insulating surface; -
wherein the channel region is a polycrystal semiconductor film crystallized by being irradiated with a continuously oscillating laser beam at least in the same channel region; and wherein a surface roughness of the channel region is 0.1 nm through 5 nm in an rms value.
-
-
6. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,
wherein the semiconductor memory element is formed over a substrate having an insulating surface; -
wherein the semiconductor active layer is a polycrystal semiconductor film constituted by aggregating a plurality of crystal grains elongated in the same direction; and wherein a surface roughness of the channel region is 0.1 nm through 5 nm in an rms value.
-
-
14. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,
wherein the semiconductor memory element is formed over a substrate having an insulating surface; -
wherein the semiconductor active layer is a crystallized polycrystal semiconductor film; wherein the semiconductor active layer is constituted by aggregating a plurality of crystal grains elongated in the same direction; and wherein a grain boundary of a crystal grain in the polycrystal semiconductor film is flat or formed with a recessed portion. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
-
-
15. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,
wherein the semiconductor memory element is formed over a substrate having an insulating surface; -
wherein the channel region is a crystallized polycrystal semiconductor film; and wherein a surface roughness of the channel region is 0.1 nm through 60 nm in a P-V value.
-
-
16. A semiconductor memory element comprising a semiconductor active layer comprising a channel region and one conductive type impurity region, a first gate insulating film, a charge accumulating layer, a second gate insulating film, and a control gate electrode,
wherein the semiconductor memory element is formed over a substrate having an insulating surface; -
wherein the channel region is a crystallized polycrystal semiconductor film; and wherein a surface roughness of the channel region is 0.1 nm through 5 nm in an rms value.
-
Specification