Multiple dielectric finfet structure and method

• US 7,115,947 B2
• Filed: 03/18/2004
• Issued: 10/03/2006
• Est. Priority Date: 03/18/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: International Business Machines Corporation
• Inventors: Nowak, Edward J. Jr., Clark, William F. Jr.
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): QUINTO, KEVIN V
• Application Number:
  US10/708,674
• Publication Number:
  US 20050205944A1
• Time in Patent Office: 929 Days
• Field of Search: 257/288, 257/347, 257/352, 257/353, 257/365, 257/623
• US Class Current: 257/347
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 21/845 including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1211 combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66818 the channel being thinned after patterning, e.g. sacrificial oxidation on fin
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Disclosed is a method and structure for a fin-type field effect transistor (FinFET) structure that has different thickness gate dielectrics covering the fins extending from the substrate. These fins have a central channel region and source and drain regions on opposite sides of the channel region. The thicker gate dielectrics can comprise multiple layers of dielectric and the thinner gate dielectrics can comprise less layers of dielectric. A cap comprising a different material than the gate dielectrics can be positioned over the fins.

Claims

1. A semiconductor structure having at least one fin-type field effect transistor (FinFET), said semiconductor structure comprising:

a substrate;

fins, comprising at least one first fin and at least one second fin, extending from said substrate; and

a first gate dielectric covering opposing sides of said first fin and a second gate dielectric covering opposing sides of said second fin,

wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness, wherein said first thickness is different from said second thickness and wherein thicker gate dielectrics comprise multiple layers of dielectric and thinner gate dielectrics comprise less layers of dielectric.

2. A semiconductor structure having at least one fin-type field effect transistor FinFET), said semiconductor structure comprising:

a substrate;

fins, comprising at least one first fin and at least one second fin, extending from said substrate;

a cap over said fins; and

a first gate dielectric covering opposing sides of said first fin and a second gate dielectric covering opposing sides of said second fin,

wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness and wherein said first thickness is different from said second thickness.

3. The semiconductor structure in claim 2, wherein said cap comprises a different material than said first gate dielectric and said second gate dielectric.

4. A semiconductor structure having at least one fin-type field effect transistor (FinFET), said semiconductor structure comprising:

a substrate;

fins, comprising at least one first fin and at least one second fin, extending from said substrate, wherein each of said fins comprises a central channel region and source and drain regions on opposite ends of said channel region; and

a first gate dielectric covering opposing sides of said channel region of said first fin and a second gate dielectric covering opposing sides of said channel region of said second fin,

wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness,

wherein said first thickness is different from said second thickness,

wherein thicker gate dielectrics comprise multiple layers of dielectric and thinner gate dielectrics comprise less layers of dielectric, and

wherein said fins have different thicknesses.

5. A semiconductor structure having at least one fin-type field effect transistor (FinFET), said semiconductor structure comprising:

a substrate;

fins, comprising at least one first fin and at least one second fin, extending from said substrate, wherein each of said fins comprises a central channel region and source and drain regions on opposite ends of said channel region;

a cap over said fins; and

a first gate dielectric covering opposing sides of said channel region of said first fin and a second gate dielectric covering opposing sides of said channel region of said second fin,

wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness, wherein said first thickness is different from said second thickness and wherein said fins have different thicknesses.

6. The semiconductor structure in claim 5, wherein said cap comprises a different material than said first gate dielectric and said second gate dielectric.

7. A semiconductor structure having multiple fin-type field effect transistors (FinFETs), said semiconductor structure comprising:

a substrate;

complementary transistors on said substrate, wherein said complementary transistors comprise;

a first fin for a first type transistor and a second fin for a second type transistor extending from said substrate; and

a first gate dielectric covering opposing sides of said first fin and a second gate dielectric covering opposing sides of said second fin,

wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness,

wherein said first thickness is different from said second thickness and

wherein thicker gate dielectrics comprise multiple layers of dielectric and thinner gate dielectrics comprise less layers of dielectric.

8. A semiconductor structure having multiple fin-type field effect transistors (FinFETs), said semiconductor structure comprising:

a substrate;

complementary transistors on said substrate, wherein said complementary transistors comprise;

a first fin for a first type transistor and a second fin for a second type transistor extending from said substrate;

a cap over said fins; and

a first gate dielectric covering opposing sides of said first fin-and a second gate dielectric covering opposing sides of said second fin,

wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness and wherein said first thickness is different from said second thickness.

9. The semiconductor structure in claim 8, wherein said cap comprises a different material than said first gate dielectric and said second gate dielectric.