Semiconductor device

• US 7,115,966 B2
• Filed: 02/28/2003
• Issued: 10/03/2006
• Est. Priority Date: 10/29/2002
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Iwamoto, Takeshi, Kono, Kazushi, Ido, Yasuhiro
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US10/375,125
• Publication Number:
  US 20040080022A1
• Time in Patent Office: 1,313 Days
• Field of Search: 257/209, 257/529, 257/530, 257/173, 257/665, 257/910, 438/132, 438/215, 438/281, 438/333, 438/467, 438/601
• US Class Current: 257/529
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a main surface;

a fuse formed on said main surface of said semiconductor substrate; and

an antireflection laser having a surface with depressions and protrusions and underlying said fuse, to receive a laser beam radiated to blow said fuse and having arrived at said antireflection layer, and repeatedly reflect the laser beam between said adjacent protrusions to prevent upward reflection of the laser beam.

2. The semiconductor device according to claim 1, wherein said antireflection layer is formed at a surface of said semiconductor substrate.