Semiconductor device
First Claim
1. A semiconductor device, comprising:
- a plurality of power amplifier circuits configured in a multistage-connected form,wherein a first to a final stage of the plurality of amplifier circuits are formed over one semiconductor substrate of silicon,wherein the plurality of amplifier circuits comprise field effect transistors,wherein drain and source electrodes of the field effect transistors are respectively formed over a main surface and a back surface of the semiconductor substrate,wherein the respective source electrodes of the plurality of field effect transistors are electrically connected to one another at the back surface of the semiconductor substrate,wherein the respective source electrodes are connected to a fixed potential, andwherein resistivity of the semiconductor substrate constituted of the silicon is in a range of about 1 mΩ
·
cm to about 10 mΩ
·
cm.
3 Assignments
0 Petitions
Accused Products
Abstract
Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
-
Citations
10 Claims
-
1. A semiconductor device, comprising:
-
a plurality of power amplifier circuits configured in a multistage-connected form, wherein a first to a final stage of the plurality of amplifier circuits are formed over one semiconductor substrate of silicon, wherein the plurality of amplifier circuits comprise field effect transistors, wherein drain and source electrodes of the field effect transistors are respectively formed over a main surface and a back surface of the semiconductor substrate, wherein the respective source electrodes of the plurality of field effect transistors are electrically connected to one another at the back surface of the semiconductor substrate, wherein the respective source electrodes are connected to a fixed potential, and wherein resistivity of the semiconductor substrate constituted of the silicon is in a range of about 1 mΩ
·
cm to about 10 mΩ
·
cm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A semiconductor device, comprising:
-
first and second power amplifier circuits differing in operating frequency, which respectively comprise a plurality of amplifier circuits configured in a multistage-connected form; and passive elements for matching circuits employed in the first and second power amplifier circuits and a bias circuit and a control circuit, wherein a first to a final stage of the plurality of amplifier circuits of the first and second power amplifier circuits are formed over one silicon semiconductor substrate, wherein the plurality of amplifier circuits respectively comprise field effect transistors, wherein drain and source electrodes of the field effect transistors are respectively formed over a main surface and a back surface of the semiconductor substrate, wherein the respective source electrodes of the plurality of field effect transistors are electrically connected to one another in the back surface of the semiconductor substrate, wherein the source electrodes are respectively connected to a fixed potential, and wherein resistivity of the semiconductor substrate is in a range of about 1 mΩ
·
cm to about 10 mΩ
·
cm.
-
Specification