Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate
First Claim
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1. A porous substrate for epitaxial growth, comprising:
- an underlying layer made of III-nitride semiconductor;
a void-formation preventive layer grown on the underlying layer;
a porous III-nitride semiconductor layer; and
a porous metallic layer grown on the porous III-nitride semiconductor layer.
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Abstract
A porous substrate for epitaxial growth includes an underlying layer made of III-nitride semiconductor which is grown on a sapphire substrate, a void-formation preventive layer which is grown on the underlying layer, a porous III-nitride semiconductor layer and a porous metallic layer on the porous III-nitride semiconductor layer.
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Citations
35 Claims
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1. A porous substrate for epitaxial growth, comprising:
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an underlying layer made of III-nitride semiconductor; a void-formation preventive layer grown on the underlying layer; a porous III-nitride semiconductor layer; and a porous metallic layer grown on the porous III-nitride semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A porous substrate for epitaxial growth, comprising:
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a sapphire substrate; a GaN layer grown on the sapphire substrate; an AlGaN layer grown on the GaN layer; a porous GaN layer grown on the AlGaN layer; and a porous TiN layer.
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14. A method for manufacturing a porous substrate for epitaxial growth, comprising the steps of:
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growing a void-formation preventive layer on an underlying layer made of III-nitride semiconductor; growing III-nitride semiconductor layer on the void-formation preventive layer; growing a metallic layer on the III-nitride semiconductor layer; and forming voids in the III-nitride semiconductor layer and the metallic layer grown on the void-formation preventive layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for manufacturing a porous substrate for epitaxial growth, comprising the steps of:
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growing a first GaN layer on a sapphire substrate; growing an AlGaN layer on the first GaN layer; growing a second GaN layer on the AlGaN layer; growing a Ti layer on the second GaN layer; and heat-treating the second GaN layer and the Ti layer in a mixed gas atmosphere of hydrogen gas and a hydride gas to form voids in the second GaN layer and the Ti layer.
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25. A method for manufacturing III-nitride semiconductor substrate, comprising the steps of:
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growing a void-formation preventive layer on an underlying layer made of III-nitride semiconductor; growing III-nitride semiconductor layer on the void-formation preventive layer; growing a metallic layer on the III-nitride semiconductor layer; forming voids in the III-nitride semiconductor layer and the metallic layer grown on the void-formation preventive layer; epitaxially growing III-nitride semiconductor substrate on the metallic layer in which voids are formed; and exfoliating the III-nitride semiconductor substrate from the metallic layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A method for manufacturing III-nitride semiconductor substrate, comprising the steps of:
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growing a first GaN layer on a sapphire substrate; growing an AlGaN layer on the first GaN layer; growing a second GaN layer on the AlGaN layer; growing a Ti layer on the second GaN layer; and heat-treating the second GaN layer and the Ti layer in a mixed gas atmosphere of hydrogen gas and a hydride gas to form voids in the second GaN layer and the Ti layer; epitaxially growing a GaN substrate on the Ti layer in which voids are formed; and exfoliating the GaN substrate from the Ti layer.
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Specification