STI formation in semiconductor device including SOI and bulk silicon regions

• US 7,118,986 B2
• Filed: 06/16/2004
• Issued: 10/10/2006
• Est. Priority Date: 06/16/2004
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Faltermeier, Johnathan E., Pendleton, Denise, Ho, Herbert L., Steigerwalt, Michael D., Kumar, Mahender, Dobuzinsky, David M.
• Primary Examiner(s): Deo, Duy-Vu N
• Application Number:
  US10/710,060
• Publication Number:
  US 20050282392A1
• Time in Patent Office: 846 Days
• Field of Search: None
• US Class Current: 438/424
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/7624 using semiconductor on insulator [SOI] technology H01L21/76297 takes precedence; manufacture of integrated circuits on insulating substrates H01L21/84; silicon on sapphire [SOS] technology H01L21/86
• CPC Class Codes: H01L 21/76283 Lateral isolation by refilling of trenches with dielectric material

Abstract

Methods for forming or etching silicon trench isolation (STI) in a silicon-on-insulator (SOI) region and a bulk silicon region, and a semiconductor device so formed, are disclosed. The STI can be etched simultaneously in the SOI and bulk silicon regions by etching to an uppermost silicon layer using an STI mask, conducting a timed etch that etches to a desired depth in the bulk silicon region and stops on a buried insulator of the SOI region, and etching through the buried insulator of the SOI region. The buried insulator etch for this process can be done with little complexity as part of a hardmask removal step. Further, by choosing the same depth for both the bulk and SOI regions, problems with a subsequent CMP process are avoided. The invention also cleans up the boundary between the SOI and bulk regions where silicon nitride residuals may exist.

Claims

1. A method for forming a silicon trench isolation (STI) in a device including a silicon-on-insulator (SOI) region and a bulk silicon region, the method comprising:

etching to an uppermost silicon layer using an STI mask;

conducting a timed etch that etches to a desired depth in the bulk silicon region and stops on a buried insulator of the SOI region;

etching through the buried insulator of the SOI region; and

depositing an STI material to form the STI.

2. The method of claim 1, wherein the desired depth in the bulk silicon region is at least as thick as a silicon layer and the buried insulator of the SOI region.

3. The method of claim 1, further comprising the step of forming the STI mask by depositing a hardmask layer, patterning and etching to form the STI mask.

4. The method of claim 3, wherein the hardmask layer Includes tetraethyl orthosilicate (TEOS).

5. The method of claim 3, wherein the STI mask etching step includes etching through the hardmask layer and at least one of any anti-reflective coating (ARC) and a pad layer.

6. The method of claim 1, wherein the timed etching step includes using an etching recipe that is selective to the buried insulator material.

7. The method of claim 1, wherein the timed etching step removes any silicon nitride below a silicon layer of the SOI region.

8. The method of claim 1, wherein the buried insulator etching step includes removing the STI mask.

9. The method of claim 1, wherein the buried insulator etching step includes using an etching recipe incapable of etching any exposed silicon, polysilicon and silicon nitride.

10. The method of claim 1, further comprising the steps of polishing to remove the STI material above an uppermost surface, and removing a pad layer.

11. A method for etching a silicon trench isolation (STI) in a mixed silicon-on-insulator (SOI) region and a bulk silicon region device, the method comprising:

etching to an uppermost silicon layer using an STI mask;

conducting a timed etch that etches to a desired depth in the bulk silicon region and stops on a buried insulator of the SOI region; and

etching Through the buried insulator of the SOI region.

12. The method of claim 11, wherein the desired depth in the bulk silicon region is at least as thick as a silicon layer and the buried insulator of the SOI region.

13. The method of claim 11, further comprising the step of forming the STI mask by depositing a hardmask layer, and patterning and etching to form the STI mask.

14. The method of claim 13, wherein the hardmask layer includes tetraethyl orthosilicate (TEOS).

15. The method of claim 13, wherein the STI mask etching step includes etching through the hardmask layer and at least one of an anti-reflective coating (ARC) and a pad layer.

16. The method of claim 11, wherein the buried insulator etching step also includes removing the STI mask.

17. The method of claim 11, wherein the timed etching step includes using an etching recipe that is selective to the buried insulator material.

18. The method of claim 11, wherein the timed etching step Includes removing any silicon nitride below a silicon layer of the SOI region.

19. The method of claim 11, wherein the buried insulator etching step also includes removing an STI mask.

20. The method of claim 11, wherein the buried insulator etching step includes using an etching recipe incapable of etching any exposed silicon, polysilicon and silicon nitride.

21. The method of claim 11, further comprising the steps of polishing to remove the STI material above an uppermost surface, and removing a pad layer.

22. A method for forming a silicon trench isolation (STI) in a device including a silicon-on-insulator (SOI) region and a bulk silicon region, the method comprising:

providing an STI mask; and

simultaneously forming the STI in the SOI region and the bulk silicon region,

wherein the forming step includes;

etching to an uppermost silicon layer using the STI mask;

conducting a timed etch that etches to a desired depth in the bulk silicon region and stops on a buried insulator of the SOI region;

etching through the buried insulator of the SOI region; and

depositing an STI material to form the STI.

23. The method of claim 22, wherein the desired depth in the bulk silicon region is at least as thick as a silicon layer and the buried insulator of the SOI region.

24. The method of claim 22, wherein the timed etching step includes using an etching recipe that is selective to the buried insulator material.

25. The method of claim 22, wherein the timed etching step removes any silicon nitride below a silicon layer of the SOI region.

26. The method of claim 22, wherein the buried insulator etching step includes using an etching recipe incapable of etching any exposed silicon, polysilicon and silicon nitride.