Luminescence stabilization of anodically oxidized porous silicon layers

• US 7,119,361 B2
• Filed: 10/25/2004
• Issued: 10/10/2006
• Est. Priority Date: 12/10/2001
• Status: Expired due to Fees

• Current Assignee: The National Research Council (The National Academies of Science)
• Original Assignee: The National Research Council (The National Academies of Science)
• Inventors: Boukherroub, Rabah, Lockwood, David John, Koshida, Nobuyoshi, Wayner, Danial D. M.
• Primary Examiner(s): Huynh, Andy
• Assistant Examiner(s): HO, HOANG QUAN TRAN
• Application Number:
  US10/972,550
• Publication Number:
  US 20050085001A1
• Time in Patent Office: 715 Days
• Field of Search: None
• US Class Current: 257/40
• CPC Class Codes: C25D 11/32 of semiconducting materials

Abstract

A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

Claims

1. An optoelectronic device comprising:

a substrate;

a porous silicon with region formed within said substrate, said porous silicon substrate having an anodically oxidized surface with oxidized and non-oxidized regions;

an organic stabilization layer attached to said anodically oxidized surface; and

an electrical contact layer over said porous silicon region.

2. An optoelectronic device as claimed in claim 1, wherein said organic layer is a monolayer.

3. An optoelectronic device as claimed in claim 2, wherein said organic monolayer is attached to said surface by Si—

C, Si—

O—

C and Si—

S—

C bonds.

4. An optoelectronic device as claimed in claim 2, wherein said organic monolayer is a mixture of different organic molecules.

5. An optoelectronic device as claimed in claim 2, wherein said organic monolayer is a mixture of saturated and conducting molecules.

6. An optoelectronic device as claimed in claim 1, wherein said porous regions comprises a superficial layer overlying an active layer, and said organic layer is formed on said superficial and active layers.

7. An optoelectronic device as claimed in claim 1, wherein said electrical contact layer is an ITO contact electrode deposited on said superficial layer.

8. An optical, electronic, or optoelectronic sensor comprising a porous silicon structure having an anodically oxidized surface with oxidized and non-oxidized regions;

and an organic layer attached to said anodically oxidized surface.

9. An optical, electronic, or optoelectronic sensor as claimed in claim 8, wherein said organic layer is a monolayer.

10. An optical, electronic, or optoelectronic sensor as claimed in claim 9, wherein said organic monolayer is attached to said surface by Si—

C, Si—

O—

C and Si—

S—

C bonds.

11. An optical, electronic, or optoelectronic sensor as claimed in claim 9, wherein said organic monolayer is a mixture of different organic molecules.

12. An optical, electronic, or optoelectronic sensor as claimed in claim 9, wherein organic said monolayer is a mixture of saturated and conducting molecules.

13. In a method of sensing chemical and biological species, the improvement wherein said sensing is carried out with the aid of a sensor as claimed in claim 8.