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System and method for lithography simulation

  • US 7,120,895 B2
  • Filed: 03/18/2005
  • Issued: 10/10/2006
  • Est. Priority Date: 10/07/2003
  • Status: Active Grant
First Claim
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1. A method to evaluate a design pattern on a photolithographic mask to a change in at least one process parameter of a photolithographic process, wherein the photolithographic process uses photolithographic equipment, the method comprising:

  • generating a first simulated image of a lithographic design on a wafer using (1) a pixel-based bitmap of the design pattern on the photolithographic mask and (2) a first relationship representing an imaging path of the projection and illumination optics of the photolithographic process, wherein the pixel-based bitmap of the design pattern on the photolithographic mask is generated using an image of the photolithographic mask; and

    generating a second simulated image of the lithographic design on a wafer using (1) the pixel-based bitmap of the design pattern on the photolithographic mask and (2) a second relationship representing the imaging path of the projection and illumination optics of the photolithographic process, wherein a difference between (i) the first relationship representing the imaging path of the projection and illumination optics of the photolithographic process and (ii) the second relationship representing the imaging path of the projection and illumination optics of the photolithographic process includes the change in the at least one process parameter of the photolithographic process; and

    evaluating the design pattern on a photolithographic mask to the change in at least one process parameter of a photolithographic process by;

    comparing the first simulated image of the lithographic design on a wafer and a design target on the wafer which corresponds to the design pattern on the photolithographic mask; and

    comparing the second simulated image of the lithographic design on a wafer and the design target on the wafer.

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