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Precursors for depositing silicon containing films and processes thereof

  • US 7,122,222 B2
  • Filed: 10/27/2003
  • Issued: 10/17/2006
  • Est. Priority Date: 01/23/2003
  • Status: Expired due to Term
First Claim
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1. A process for the chemical vapor deposition of material selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride on a substrate using a hydrazinosilane of the formula:


  • [R12N—

    NH]nSi(R2)4−

    n
    where each R1 is independently selected from alkyl groups of C1 to C6;

    each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and

    n=1–

    4.

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