Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device
First Claim
1. A semiconductor chip production method, comprising the steps of:
- forming a front side recess in a semiconductor substrate having a front surface and a rear surface and including a functional device provided in the front surface thereof, the front side recess extending from the front surface of the semiconductor substrate along a thickness of the semiconductor substrate;
depositing a metal material in the front side recess to form a front side electrode electrically connected to the functional device;
removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a predetermined thickness which is greater than a depth of the front side recess;
forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step to form a continuous through-hole; and
depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode extending through the semiconductor substrate.
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Accused Products
Abstract
A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.
33 Citations
8 Claims
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1. A semiconductor chip production method, comprising the steps of:
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forming a front side recess in a semiconductor substrate having a front surface and a rear surface and including a functional device provided in the front surface thereof, the front side recess extending from the front surface of the semiconductor substrate along a thickness of the semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to the functional device; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a predetermined thickness which is greater than a depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step to form a continuous through-hole; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode extending through the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device production method, comprising the steps of:
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producing each of plural semiconductor chips; and stacking the plural semiconductor chips one on another, wherein the semiconductor chip producing step includes the steps of; forming a front side recess in a semiconductor substrate having a front surface and a rear surface and including a functional device provided in the front surface thereof, the front side recess extending from the front surface of the semiconductor substrate along a thickness of the semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to the functional device; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a predetermined thickness which is greater than a depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step to form a continuous through-hole; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode extending through the semiconductor substrate. - View Dependent Claims (8)
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Specification