Electrooptical device and a method of manufacturing the same
First Claim
Patent Images
1. A display device comprising a pixel portion and a driver circuit portion on a substrate, said pixel portion comprising:
- a semiconductor film comprising a plurality of channel forming regions, a plurality of impurity regions, a source region, and a drain region;
a gate electrode overlapping with the plurality of channel forming regions and some of the plurality of impurity regions, with a gate insulating film interposed therebetween;
a gate wiring electrically connected to said gate electrode;
a source wiring electrically connected to one of said source region and said drain region; and
;
a pixel electrode over said source wiring,wherein said some of the plurality of impurity regions are located between the plurality of channel forming regions in the semiconductor film and contain a low concentration impurity region and a high concentration impurity regionwherein a thickness of a gate insulating film of a TFT in said driver circuit portion is thinner than that of the gate insulating film of a TFT in the pixel portion, andwherein a first portion of said source wiring overlapped with said gate wiring has smaller line width than a second portion of said source wiring not overlapped with said gate electrode wiring, and a portion of said second portion overlaps with said pixel electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
To provide a semiconductor device of high reliability by arranging TFTs that have appropriate structures in accordance with circuit functions. In a semiconductor device having a driver circuit portion and a pixel portion on the same insulator, gate insulating films of a driver TFT are designed to be thinner than a gate insulating film of a pixel TFT. In the pixel TFT, channel forming regions are formed under a gate electrode, and a separation region is formed between the channel forming regions. At this point, LDD regions have a region that overlaps with the gate electrode and a region that does not.
326 Citations
34 Claims
-
1. A display device comprising a pixel portion and a driver circuit portion on a substrate, said pixel portion comprising:
-
a semiconductor film comprising a plurality of channel forming regions, a plurality of impurity regions, a source region, and a drain region; a gate electrode overlapping with the plurality of channel forming regions and some of the plurality of impurity regions, with a gate insulating film interposed therebetween; a gate wiring electrically connected to said gate electrode; a source wiring electrically connected to one of said source region and said drain region; and
;a pixel electrode over said source wiring, wherein said some of the plurality of impurity regions are located between the plurality of channel forming regions in the semiconductor film and contain a low concentration impurity region and a high concentration impurity region wherein a thickness of a gate insulating film of a TFT in said driver circuit portion is thinner than that of the gate insulating film of a TFT in the pixel portion, and wherein a first portion of said source wiring overlapped with said gate wiring has smaller line width than a second portion of said source wiring not overlapped with said gate electrode wiring, and a portion of said second portion overlaps with said pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A display device comprising a pixel portion and a driver circuit portion on a substrate, said pixel portion comprising:
-
a semiconductor film comprising a plurality of channel forming regions, a plurality of impurity regions, a source region, and a drain region; a gate electrode overlapping with the plurality of channel forming regions and some of the plurality of impurity regions, with a gate insulating film interposed therebetween; a gate wiring electrically connected to said gate electrode; a source wiring electrically connected with one of said source region and said drain region; and a pixel electrode over said source wiring, wherein said some of the plurality of impurity regions are located between the plurality of channel forming regions in the semiconductor film and contain a low concentration impurity region and a high concentration impurity region, wherein a gate insulating film of a TFT in said driver circuit portion and a dielectric of a storage capacitor formed in said pixel portion comprise the same material and have the same film thickness, wherein the thickness of the gate insulating film of the TFT in said driver circuit portion is thinner than that of the gate insulating film of a TFT in the pixel portion, and wherein a first portion of said source wiring overlapped with said gate wiring has smaller line width than a second portion of said source wiring not overlapped with said gate wiring, and a portion of said second portion overlaps with said pixel electrode. - View Dependent Claims (9, 10, 11, 12, 13)
-
-
14. A display device comprising a pixel portion and a driver circuit portion on a substrate, said pixel portion comprising:
-
a semiconductor film comprising at least two channel forming regions, at least one first impurity region, at least one second impurity region, a source region, and a drain region; a gate electrode overlapped with said at least two channel forming regions and the first impurity region, and a part of the second impurity region with a gate insulating film interposed therebetween; a gate wiring electrically connected to said gate electrode; a source wiring electrically connected with one of said source region and said drain region; and a pixel electrode over said source wiring, wherein one of the at least two channel forming regions is located between the first impurity region and the second impurity region, wherein a thickness of a gate insulating film of a TFT in said driver circuit portion is thinner than that of the gate insulating film in the pixel portion, and wherein a first portion of said source wiring overlapped with said gate wiring has smaller line width than a second portion of said source wiring not overlapped with said gate wiring, and a portion of said second portion overlaps with said pixel electrode. - View Dependent Claims (15, 16, 17, 18, 19)
-
-
20. A display device comprising a pixel portion and a driver circuit portion on a substrate, said pixel portion comprising:
-
a semiconductor film having at least two channel forming regions, first low concentration impurity regions and a second low concentration impurity region, a high concentration impurity region, a source region, and a drain region; a gate electrode overlapping with said at least two channel forming regions, the first low concentration impurity regions, the high concentration impurity region, and a portion of the second low concentration impurity region, with a gate insulating film interposed therebetween; a gate wiring electrically connected to said gate electrode; a source wiring electrically connected with one of said source region and said drain region; and a pixel electrode over said source wiring, wherein the high concentration impurity region is located between the at least two channel forming regions, wherein a gate insulating film of a TFT in said driver circuit portion and a dielectric of a storage capacitor formed in said pixel portion comprise the same material and have the same film thickness, and wherein a first portion of said source wiring overlapped with said gate wiring has smaller line width than a second portion of said source wiring not overlapped with said gate wiring, and a portion of said second portion overlaps with said pixel electrode. - View Dependent Claims (21, 22, 23, 24, 25, 26)
-
-
27. A semiconductor device comprising:
-
a semiconductor film having at least first and second channel forming regions, first, second, third, and fourth low concentration impurity regions, a high concentration impurity region, a source region, and a drain region; a gate electrode overlapping with the first and second channel forming regions, the second and third low concentration impurity regions, the high concentration impurity region, and portions of the first and fourth low concentration impurity regions, with a gate insulating film interposed therebetween; a gate wiring electrically connected to said gate electrode; a source wiring electrically connected with one of said source region and said drain region; and a pixel electrode over said source wiring, wherein the high concentration impurity region is located between the first and second channel forming regions, and wherein a first portion of said source wiring overlapped with said gate wiring has smaller line width than a second portion of said source wiring not overlapped with said gate wiring, and a portion of said second portion overlaps with said pixel electrode. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34)
-
Specification