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Stressed semiconductor device structures having granular semiconductor material

  • US 7,122,849 B2
  • Filed: 11/14/2003
  • Issued: 10/17/2006
  • Est. Priority Date: 11/14/2003
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device structure, comprising:

  • a first semiconductor device having a first gate stack, anda second semiconductor device having a second gate stack;

    wherein said first gate stack includes a first semiconductor material having an average grain size of less than approximately 30 nm, and wherein said second gate stack includes a second semiconductor material having an average grain size of greater than approximately 30 nm, said structure further comprising a first channel disposed below said first gate stack, and a second channel disposed below said second gate stack;

    wherein the second gate stack imparts a compressive stress to the second channel in a range of approximately −

    200 MPa to approximately −

    600 MPa, while the first gate stack imparts a compressive stress to the first channel in a range of approximately −

    10 MPa to approximately −

    100 MPa.

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