Ultra high temperature hermetically protected wirebonded piezoresistive transducer

• US 7,124,639 B1
• Filed: 06/21/2005
• Issued: 10/24/2006
• Est. Priority Date: 06/21/2005
• Status: Active Grant

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Ned, Alexander A.
• Primary Examiner(s): Lefkowitz, Edward
• Assistant Examiner(s): JENKINS, JERMAINE L
• Application Number:
  US11/157,615
• Time in Patent Office: 490 Days
• Field of Search: 73700-756
• US Class Current: 73/708
• CPC Class Codes: G01L 19/0084 to the outside of the housing other details about the housing see G01L19/14
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm

Abstract

An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal. A sealing cover is then attached to the entire composite sensor to hermetically seal all of the interconnections. The sealing cover is a glass structure, has a central aperture which corresponds to the aperture formed by the frame, allowing the active area of the sensor to be exposed to the pressure medium. The sealing cover is bonded to the periphery of the rim and to the glass supporting pedestal.

Claims

1. A high temperature pressure transducer, comprising:

a wafer of semiconductor material having a given surface area, and having positioned on a top surface of said wafer a plurality of pressure sensitive elements located within an active area, said active area capable of deflecting upon application of a force thereto, an opposite surface of said wafer including indented regions of a sufficient area to form said active area due to the thinning of said wafer at said indented regions;

a plurality of contact terminals each coupled to an associated pressure sensitive element and extending towards the periphery of said wafer and located on the thicker portion of said wafer remote from said active area;

a frame located on said top surface of said wafer and surrounding said active area, said frame opening bounding said pressure sensitive elements within said active area;

an insulating wafer of a larger area than said semiconductor wafer, said insulating wafer having a plurality of through apertures each near the periphery of said insulating wafer and each associated with a contact terminal of said semiconductor wafer, said semiconductor wafer positioned on said top surface of said insulating wafer to enable access to said through apertures on said top surface, said wafers forming a composite structure;

a high temperature header having contact regions, each region positioned to accommodate an associated through aperture when said composite structure is mounted on said header and means for mounting said composite structure on said header;

a plurality of high temperature wires, each connected to an associated contact on said semiconductor wafer at one end and directed through said through aperture and connected to said header contact region at said other end; and

an insulating cover member having a central opening corresponding to said frame opening, said cover member bonded to said frame about the periphery of said central opening and bonded about the peripheral edge to said insulating wafer to hermetically seal said semiconductor wafer to said insulating wafer.

2. The high temperature transducer according to claim 1, wherein said wafer of semiconductor is a wafer of silicon with said pressure sensitive elements being piezoresistors formed on said silicon wafer.

3. The high temperature transducer according to claim 2, wherein said active area is passivated with a layer of silicon dioxide covering said piezoresistors.

4. The high temperature transducer according to claim 2, wherein said contact terminals are p+ silicon each having a platinum contact region for connecting to an associated wire.

5. The high temperature transducer according to claim 1, wherein said frame is a semiconductor frame formed about said active area.

6. The high temperature transducer according to claim 1, wherein said frame is a glass frame bonded to said semiconductor wafer and surrounding said active area.

7. The high temperature transducer according to claim 1, wherein said insulating wafer is a high temperature glass wafer bonded to said semiconductor wafer to symmetrically position said semiconductor wafer on said glass wafer.

8. The high temperature transducer according to claim 7, wherein said high temperature glass is a low expansion borosilicate material.

9. The high temperature transducer according to claim 8, wherein said insulating glass wafer is bonded to said semiconductor wafer by an electrostatic bond.

10. The high temperature transducer according to claim 1, wherein said semiconductor wafer, said frame and said insulating wafer are generally rectangular in shape, with said insulating wafer having a through hole in each corner.

11. The high temperature transducer according to claim 1, wherein said header is a flat-pack header.

12. The high temperature transducer according to claim 1, wherein said cover member is fabricated from a high temperature glass and is bonded to said frame and said insulating wafer by an electrostatic bond.

13. The high temperature transducer according to claim 12, wherein said high temperature glass is a low expansion borosilicate material.

14. A high temperature composite sensor member structure comprising:

a silicon wafer having a plurality of piezoresistive elements located on a top surface within an active area of said wafer said bottom surface having a depressed region defining said active area said depressed region operative to thin said wafer at said active area;

a plurality of contact terminals each connected to an associated piezoresistive element extending from said active area towards the periphery of said wafer;

a frame surrounding said active area, with said frame opening bounding said piezoresistive elements within said active area;

a glass wafer having a plurality of through apertures each associated with one contact terminal of said silicon wafer and each located near the periphery of said glass wafer, said glass wafer being larger than said silicon wafer, with said silicon wafer bonded to said glass wafer to enable a peripheral portion of said glass wafer to frame said silicon wafer to enable access to said through apertures;

a plurality of leads each connected at one end to an associated contact terminal of said silicon wafer and directed at said other end into and extending from an associated through hole; and

a cover member having a central opening corresponding to said frame opening, said cover member bonded to the periphery of said frame about the periphery of said central opening and bonded to said glass wafer about the periphery thereof to cover said glass wafer, with said opening allowing a pressure to be applied to said active area, said cover member sealing said composite member structure while exposing said active area.

15. The composite sensor according to claim 14, wherein said active area within said frame opening is passivated by depositing a layer of silicon dioxide to cover said piezoresistive elements.

16. The composite sensor according to claim 14 further comprising:

a high temperature header having terminal areas located on a surface with each area associated and positioned to encircle an associated through aperture of said glass wafer, said composite wafer mounted on said surface of said high temperature header with an associated lead connected to an associated terminal area of said header when said composite member is mounted on said header surface.

17. The composite structure according to claim 14 wherein said cover member is fabricated from a high temperature glass.

18. The composite structure according to claim 17 wherein said cover member is bonded to said frame and said glass wafer by an electrostatic bond.

19. The composite structure according to claim 14 wherein said contact terminals on said silicon wafer are platinum metallized contacts.

20. The composite structure according to claim 14, wherein said silicon wafer, said glass wafer and said frame are rectangular in shape, with said glass wafer having a through hole at each corner near the periphery.