Low-temperature silicon nitride deposition

• US 7,125,582 B2
• Filed: 07/30/2003
• Issued: 10/24/2006
• Est. Priority Date: 07/30/2003
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Goodner, Michael D., McSwiney, Michael L.
• Primary Examiner(s): Meeks, Timothy
• Assistant Examiner(s): Abramowitz, Howard
• Application Number:
  US10/631,627
• Publication Number:
  US 20050025885A1
• Time in Patent Office: 1,182 Days
• Field of Search: 427/255.393, 427/255.394, 427/255.27, 427/255.26, 427/255.23, 427/248.1
• US Class Current: 427/255.27
• CPC Class Codes: C23C 16/345 Silicon nitride

Abstract

A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.

Claims

1. A method comprising:

combining a specific silicon source precursor and a nitrogen source precursor at a temperature up to 550°

C.; and

forming a silicon nitride film, wherein the silicon source precursor has one of the general formula;

2. The method of claim 1, wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.

3. A method comprising:

combining a silicon source precursor and a nitrogen source precursor; and

forming a silicon nitride film,

wherein the silicon source precursor is selected from one of the general formula;

4. The method of claim 3, wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.

5. A method comprising:

combining a aminosilane source precursor and a nitrogen source precursor in a deposition chamber, wherein the aminosilane source precursor comprises a material having a property that will, in combination with the nitrogen source precursor, form a silicon nitride film at a temperature up to 550°

C; and

forming a silicon nitride film, wherein the aminosilane is selected from one of the general formula;

6. The method of claim 5, wherein the nitrogen source precursor comprises ammonia, a substituted hydrazine, or an unsubstituted hydrazine.