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Power MOSFET driver and method therefor

  • US 7,126,388 B2
  • Filed: 12/16/2004
  • Issued: 10/24/2006
  • Est. Priority Date: 12/16/2004
  • Status: Active Grant
First Claim
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1. A power MOSFET driver comprising:

  • a semiconductor package having no more than eight external connection terminals and containing a semiconductor die on which the power MOSFET driver is formed;

    a first input of the no more than eight external connection terminals configured to receive a supply voltage having a first value for powering the power MOSFET driver, wherein the power MOSFET driver externally receives the supply voltage;

    a first transistor driver coupled to operate from the supply voltage and form a first drive signal operable to drive a first MOS transistor;

    a circuit configured to form a first power supply voltage having a second value that is less than the first value of the supply voltage and is derived internally within the power MOSFET driver from the supply voltage;

    control logic configured to operate from the first power supply voltage; and

    a second transistor driver coupled to operate from a second power supply voltage having a third value that is less than the second value and form a second drive signal operable to drive a second MOS transistor.

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