Direct conversion energy discriminating CT detector

• US 7,127,027 B2
• Filed: 12/22/2005
• Issued: 10/24/2006
• Est. Priority Date: 05/19/2004
• Status: Active Grant

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Hoffman, David M.
• Primary Examiner(s): Thomas, Courtney
• Assistant Examiner(s): Yun, Jurie
• Application Number:
  US11/275,294
• Publication Number:
  US 20060104411A1
• Time in Patent Office: 306 Days
• Field of Search: 378/19, 378/98.8, 250/370.09, 250/370.13, 250/370.06, 250/370.1
• US Class Current: 378/19
• CPC Class Codes: A61B 6/032 Transmission computed tomography [CT]
• CPC Class Codes: A61B 6/4241 using energy resolving detectors, e.g. photon counting
• CPC Class Codes: A61B 6/4411 the apparatus being modular A61B6/4283 takes precedence
• CPC Class Codes: G01N 2223/419 computed tomograph
• CPC Class Codes: G01N 2223/612 biological material
• CPC Class Codes: G01N 23/046 using tomography, e.g. computed tomography [CT]
• CPC Class Codes: G01T 1/2985 In depth localisation, e.g. using positron emitters; Tomographic imaging (longitudinal and transverse section imaging; apparatus for radiation diagnosis sequentially in different planes, steroscopic radiation diagnosis); using external radiation sources A61B6/02

Abstract

A CT detector capable of energy discrimination and direct conversion is disclosed. The detector includes multiple layers of semiconductor material with the layers having varying thicknesses. The detector is constructed to be segmented in the x-ray penetration direction so as to optimize count rate performance as well as avoid saturation.

Claims

1. A CT detector comprising:

a first semiconductor layer spaced apart from a second semiconductor layer, the semiconductor layers designed to convert x-rays to electrical signals and collectively having a max photon count rate that is greater than a single semiconductor layer having a thickness equal to a composite thickness of the first and the second semiconductor layers;

a readout layer sandwiched between the first and the second semiconductor layers, the readout layer designed to translate the electrical signals to a data acquisition system.

2. The CT detector of claim 1 further comprising a voltage application layer positioned adjacent to a surface of each semiconductor layer opposite to that which the readout layer is positioned.

3. The CT detector of claim 2 wherein each semiconductor layer is in contact with a readout layer and a voltage application layer.

4. The CT detector of claim 1 wherein the semiconductor layers are formed of at least CZT.

5. The CT detector of claim 1 wherein the semiconductor layers are arranged in a layered stack in an x-ray penetration direction.

6. The CT detector of claim 5 wherein the first semiconductor layer absorbs more x-rays than the second semiconductor layer which is positioned farther from an x-ray source.

7. The CT detector of claim 1 wherein the semiconductor layers have the same thickness.

8. The CT detector of claim 1 wherein the first semiconductor layer is thicker than the second semiconductor layer.

9. The CT detector of claim 1 wherein the readout layer reads out electrical signals from both semiconductor layers.

10. A CT detector comprising:

a stacked arrangement of direct conversion layers aligned to directly convert x-rays to electrical signals;

the stacked arrangement including a first direct conversion layer and a second direct conversion layer spaced apart from one another by a shared readout layer;

the first direct conversion layer more absorbent of x-rays than the second direct conversion layer.

11. The CT detector of claim 10 wherein the readout layer carries energy-sensitive CT data from the first and the second direct conversion layers to a data acquisition system.

12. The CT detector of claim 11 wherein the energy-sensitive CT data includes photon count and energy level information.

13. The CT detector of claim 10 wherein the stacked arrangement further includes a pair of biasing layers, each biasing layer connected to a respective direct conversion layer and designed to create a potential across a direct conversion layer with the shared readout layer.

14. The CT detector of claim 13 wherein the readout layer and the biasing layers are metallized to a respective surface of the first and the second direct conversion layers.